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Results: 4
ISOLATION OF A LATTICE-MISMATCHED ALINAS GAINAS LAYER ON INP USING ION-IMPLANTATION FOR HIGH-ENERGY MOBILITY TRANSISTOR REALIZATION (VOL 15, PG 1008, 1997)/
Authors: FOURRE H PESANT JC SCHULER O CAPPY A
Citation: H. Fourre et al., ISOLATION OF A LATTICE-MISMATCHED ALINAS GAINAS LAYER ON INP USING ION-IMPLANTATION FOR HIGH-ENERGY MOBILITY TRANSISTOR REALIZATION (VOL 15, PG 1008, 1997)/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 255-255
ISOLATION OF A LATTICE-MISMATCHED ALINAS GAINAS LAYER ON INP USING ION-IMPLANTATION FOR HIGH-ENERGY MOBILITY TRANSISTOR REALIZATION/
Authors: FOURRE H PESANT JC SCHULER O CAPPY A
Citation: H. Fourre et al., ISOLATION OF A LATTICE-MISMATCHED ALINAS GAINAS LAYER ON INP USING ION-IMPLANTATION FOR HIGH-ENERGY MOBILITY TRANSISTOR REALIZATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1008-1010
SELECTIVE WET ETCHING OF LATTICE-MATCHED INGAAS INALAS ON INP AND METAMORPHIC INGAAS/INALAS ON GAAS USING SUCCINIC ACID HYDROGEN-PEROXIDE SOLUTION (VOL 14, PG 3400, 1996)/
Authors: FOURRE H DIETTE F CAPPY A
Citation: H. Fourre et al., SELECTIVE WET ETCHING OF LATTICE-MATCHED INGAAS INALAS ON INP AND METAMORPHIC INGAAS/INALAS ON GAAS USING SUCCINIC ACID HYDROGEN-PEROXIDE SOLUTION (VOL 14, PG 3400, 1996)/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3603-3603
SELECTIVE WET ETCHING OF LATTICE-MATCHED INGAAS INALAS ON INP AND METAMORPHIC INGAAS/INALAS ON GAAS USING SUCCINIC ACID HYDROGEN-PEROXIDE SOLUTION/
Authors: FOURRE H DIETTE F CAPPY A
Citation: H. Fourre et al., SELECTIVE WET ETCHING OF LATTICE-MATCHED INGAAS INALAS ON INP AND METAMORPHIC INGAAS/INALAS ON GAAS USING SUCCINIC ACID HYDROGEN-PEROXIDE SOLUTION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3400-3402
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