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Results: 1-25 | 26-31
Results: 1-25/31
OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE OF EPITAXIAL GAN
Authors: GLASER ER KENNEDY TA CARLOS WE FREITAS JA WICKENDEN AE KOLESKE DD
Citation: Er. Glaser et al., OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE OF EPITAXIAL GAN, Physical review. B, Condensed matter, 57(15), 1998, pp. 8957-8965
OPTICAL STUDIES OF UNDOPED AND DOPED WIDE BANDGAP CARBIDE AND NITRIDESEMICONDUCTORS
Authors: FREITAS JA MOORE WJ
Citation: Ja. Freitas et Wj. Moore, OPTICAL STUDIES OF UNDOPED AND DOPED WIDE BANDGAP CARBIDE AND NITRIDESEMICONDUCTORS, Brazilian journal of physics, 28(1), 1998, pp. 12-18
RAMAN AND INFRARED-SPECTROSCOPY STUDIES OF LINBO3 IN NIOBATE GLASS-CERAMICS
Authors: DEARAUJO EB DEPAIVA JAC FREITAS JA SOMBRA ASB
Citation: Eb. Dearaujo et al., RAMAN AND INFRARED-SPECTROSCOPY STUDIES OF LINBO3 IN NIOBATE GLASS-CERAMICS, Journal of physics and chemistry of solids, 59(5), 1998, pp. 689-694
OPTICAL AND STRUCTURAL-PROPERTIES OF LATERAL EPITAXIAL OVERGROWN GAN LAYERS
Authors: FREITAS JA NAM OH ZHELEVA TS DAVIS RF
Citation: Ja. Freitas et al., OPTICAL AND STRUCTURAL-PROPERTIES OF LATERAL EPITAXIAL OVERGROWN GAN LAYERS, Journal of crystal growth, 190, 1998, pp. 92-96
ENHANCEMENT OF ELECTRICAL AND STRUCTURAL-PROPERTIES OF GAN LAYERS GROWN ON VICINAL-CUT, A-PLANE SAPPHIRE SUBSTRATES
Authors: FATEMI M WICKENDEN AE KOLESKE DD TWIGG ME FREITAS JA HENRY RL GORMAN RJ
Citation: M. Fatemi et al., ENHANCEMENT OF ELECTRICAL AND STRUCTURAL-PROPERTIES OF GAN LAYERS GROWN ON VICINAL-CUT, A-PLANE SAPPHIRE SUBSTRATES, Applied physics letters, 73(5), 1998, pp. 608-610
OPTICAL CHARACTERIZATION OF LATERAL EPITAXIAL OVERGROWN GAN LAYERS
Authors: FREITAS JA NAM OH DAVIS RF SAPARIN GV OBYDEN SK
Citation: Ja. Freitas et al., OPTICAL CHARACTERIZATION OF LATERAL EPITAXIAL OVERGROWN GAN LAYERS, Applied physics letters, 72(23), 1998, pp. 2990-2992
MORPHOLOGICAL EVOLUTION, RAMAN AND PHOTOLUMINESCENCE SPECTRA IN OPTICALLY TRANSPARENT CUBIC SILICON-CARBIDE
Authors: RUSSELL MW FREITAS JA MOORE WJ BUTLER JE
Citation: Mw. Russell et al., MORPHOLOGICAL EVOLUTION, RAMAN AND PHOTOLUMINESCENCE SPECTRA IN OPTICALLY TRANSPARENT CUBIC SILICON-CARBIDE, Advanced materials for optics and electronics, 7(4), 1997, pp. 195-206
ZEEMAN SPECTROSCOPY OF SHALLOW DONORS IN GAN
Authors: MOORE WR FREITAS JA MOLNAR RJ
Citation: Wr. Moore et al., ZEEMAN SPECTROSCOPY OF SHALLOW DONORS IN GAN, Physical review. B, Condensed matter, 56(19), 1997, pp. 12073-12076
OPTICAL AND MAGNETIC-RESONANCE CHARACTERIZATION OF UNDOPED AND DOPED WURTZITE GAN FILMS DEPOSITED ON SAPPHIRE SUBSTRATES
Authors: FREITAS JA KENNEDY TA GLASER ER CARLOS WE
Citation: Ja. Freitas et al., OPTICAL AND MAGNETIC-RESONANCE CHARACTERIZATION OF UNDOPED AND DOPED WURTZITE GAN FILMS DEPOSITED ON SAPPHIRE SUBSTRATES, Solid-state electronics, 41(2), 1997, pp. 185-188
FABRICATION AND CHARACTERIZATION OF GAN FETS
Authors: BINARI SC KRUPPA W DIETRICH HB KELNER G WICKENDEN AE FREITAS JA
Citation: Sc. Binari et al., FABRICATION AND CHARACTERIZATION OF GAN FETS, Solid-state electronics, 41(10), 1997, pp. 1549-1554
THE INFLUENCE OF STRAIN AND MOSAIC STRUCTURE ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN FILMS ON SAPPHIRE SUBSTRATES
Authors: WICKENDEN AE ALEXANDER WB KOLESKE DD FREITAS JA
Citation: Ae. Wickenden et al., THE INFLUENCE OF STRAIN AND MOSAIC STRUCTURE ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN FILMS ON SAPPHIRE SUBSTRATES, Journal of crystal growth, 170(1-4), 1997, pp. 367-371
PERSISTENT PHOTOCONDUCTIVITY IN N-TYPE GAN
Authors: BEADIE G RABINOVICH WS WICKENDEN AE KOLESKE DD BINARI SC FREITAS JA
Citation: G. Beadie et al., PERSISTENT PHOTOCONDUCTIVITY IN N-TYPE GAN, Applied physics letters, 71(8), 1997, pp. 1092-1094
AL, AL C AND AL SI IMPLANTATIONS IN 6H-SIC
Authors: RAO MV GRIFFITHS P GARDNER J HOLLAND OW GHEZZO M KRETCHMER J KELNER G FREITAS JA
Citation: Mv. Rao et al., AL, AL C AND AL SI IMPLANTATIONS IN 6H-SIC, Journal of electronic materials, 25(1), 1996, pp. 75-80
ON THE ORIGIN OF ELECTRICALLY ACTIVE DEFECTS IN ALGAN ALLOYS GROWN BYORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: POLYAKOV AY SHIN M FREITAS JA SKOWRONSKI M GREVE DW WILSON RG
Citation: Ay. Polyakov et al., ON THE ORIGIN OF ELECTRICALLY ACTIVE DEFECTS IN ALGAN ALLOYS GROWN BYORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of applied physics, 80(11), 1996, pp. 6349-6354
NATIVE DEFECTS AND DOPANTS IN GAN STUDIED THROUGH PHOTOLUMINESCENCE AND OPTICALLY DETECTED MAGNETIC-RESONANCE
Authors: KENNEDY TA GLASER ER FREITAS JA CARLOS WE KHAN MA WICKENDEN DK
Citation: Ta. Kennedy et al., NATIVE DEFECTS AND DOPANTS IN GAN STUDIED THROUGH PHOTOLUMINESCENCE AND OPTICALLY DETECTED MAGNETIC-RESONANCE, Journal of electronic materials, 24(4), 1995, pp. 219-223
THE EFFECT OF GAN AND ALN BUFFER LAYERS ON GAN FILM PROPERTIES GROWN ON BOTH C-PLANE AND A-PLANE SAPPHIRE
Authors: DOVERSPIKE K ROWLAND LB GASKILL DK FREITAS JA
Citation: K. Doverspike et al., THE EFFECT OF GAN AND ALN BUFFER LAYERS ON GAN FILM PROPERTIES GROWN ON BOTH C-PLANE AND A-PLANE SAPPHIRE, Journal of electronic materials, 24(4), 1995, pp. 269-273
OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION
Authors: GLASER ER KENNEDY TA DOVERSPIKE K ROWLAND LB GASKILL DK FREITAS JA KHAN MA OLSON DT KUZNIA JN WICKENDEN DK
Citation: Er. Glaser et al., OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION, Physical review. B, Condensed matter, 51(19), 1995, pp. 13326-13336
DONOR-ACCEPTOR PAIR RECOMBINATION IN SYNTHETIC TYPE-IIB SEMICONDUCTING DIAMOND
Authors: KLEIN PB CROSSFIELD MD FREITAS JA COLLINS AT
Citation: Pb. Klein et al., DONOR-ACCEPTOR PAIR RECOMBINATION IN SYNTHETIC TYPE-IIB SEMICONDUCTING DIAMOND, Physical review. B, Condensed matter, 51(15), 1995, pp. 9634-9642
DONORS IN CUBIC SILICON-CARBIDE
Authors: MOORE WJ FREITAS JA LINCHUNG PJ
Citation: Wj. Moore et al., DONORS IN CUBIC SILICON-CARBIDE, Solid state communications, 93(5), 1995, pp. 389-392
INFRARED DIELECTRIC-CONSTANT OF CUBIC SIC
Authors: MOORE WJ HOLM RT YANG MJ FREITAS JA
Citation: Wj. Moore et al., INFRARED DIELECTRIC-CONSTANT OF CUBIC SIC, Journal of applied physics, 78(12), 1995, pp. 7255-7258
AL AND B ION-IMPLANTATIONS IN 6H-SIC AND 3C-SIC
Authors: RAO MV GRIFFITHS P HOLLAND OW KELNER G FREITAS JA SIMONS DS CHI PH GHEZZO M
Citation: Mv. Rao et al., AL AND B ION-IMPLANTATIONS IN 6H-SIC AND 3C-SIC, Journal of applied physics, 77(6), 1995, pp. 2479-2485
LUMINESCENCE STUDIES OF NITROGEN-DOPED AND BORON-DOPED DIAMOND FILMS
Authors: FREITAS JA DOVERSPIKE K KLEIN PB KHONG YL COLLINS AT
Citation: Ja. Freitas et al., LUMINESCENCE STUDIES OF NITROGEN-DOPED AND BORON-DOPED DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 821-824
NOVEL TECHNIQUE FOR GROWTH-ETCH CYCLING OF FLAME-DEPOSITED DIAMOND FILMS
Authors: THORPE TP WEIMER RA FREITAS JA
Citation: Tp. Thorpe et al., NOVEL TECHNIQUE FOR GROWTH-ETCH CYCLING OF FLAME-DEPOSITED DIAMOND FILMS, Applied physics letters, 65(19), 1994, pp. 2490-2492
IDENTIFICATION OF PHOSPHORUS IN DIAMOND THIN-FILMS USING ELECTRON-PARAMAGNETIC-RESONANCE SPECTROSCOPY
Authors: ZVANUT ME CARLOS WE FREITAS JA JAMISON KD HELLMER RP
Citation: Me. Zvanut et al., IDENTIFICATION OF PHOSPHORUS IN DIAMOND THIN-FILMS USING ELECTRON-PARAMAGNETIC-RESONANCE SPECTROSCOPY, Applied physics letters, 65(18), 1994, pp. 2287-2289
EVIDENCE OF DONOR-ACCEPTOR PAIR RECOMBINATION FROM A NEW EMISSION BAND IN SEMICONDUCTING DIAMOND
Authors: FREITAS JA KLEIN PB COLLINS AT
Citation: Ja. Freitas et al., EVIDENCE OF DONOR-ACCEPTOR PAIR RECOMBINATION FROM A NEW EMISSION BAND IN SEMICONDUCTING DIAMOND, Applied physics letters, 64(16), 1994, pp. 2136-2138
Risultati: 1-25 | 26-31