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Results:
1-20
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Results: 20
Authors:
QIU R
FRIGERI C
SCHIMMER BP
Citation: R. Qiu et al., A ROLE FOR GUANYL NUCLEOTIDE-BINDING REGULATORY PROTEIN BETA-SUBUNIT AND GAMMA-SUBUNIT IN THE EXPRESSION OF THE ADRENOCORTICOTROPIN RECEPTOR, Molecular endocrinology, 12(12), 1998, pp. 1879-1887
Authors:
FRIGERI C
BRINCIOTTI A
RITCHIE DM
Citation: C. Frigeri et al., GROWTH OF INGAAS GAAS ON OFFCUT SUBSTRATES BY MOVPE - INFLUENCE ON MACROSTEPS AND DISLOCATIONS FORMATION/, Crystal research and technology, 33(3), 1998, pp. 375-382
Authors:
FRIGERI C
WEYHER JL
JIMENEZ J
MARTIN P
Citation: C. Frigeri et al., ANALYSIS OF LARGE IMPURITY ATMOSPHERES AT DISLOCATIONS AND ASSOCIATEDPOINT-DEFECT REACTIONS IN DIFFERENTLY N-DOPED GAAS CRYSTALS, Journal de physique. III, 7(12), 1997, pp. 2339-2360
Authors:
MARTIN P
FRIGERI C
JIMENEZ J
WEYHER J
Citation: P. Martin et al., A STUDY OF DISLOCATIONS IN GAAS-TE USING ELECTRON AND OPTICAL BEAMS (VOL 42, PG 225, 1996), Materials science & engineering. B, Solid-state materials for advanced technology, 48(3), 1997, pp. 279-279
Authors:
FRIGERI C
BRINCIOTTI A
DIPAOLA A
RITCHIE DM
LONGO F
VIDIMARI F
Citation: C. Frigeri et al., COMPOSITIONAL INHOMOGENEITY AND STRAIN RELAXATION IN INGAAS SQWS MOVPE-GROWN ON TILTED GAAS SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 101-105
Authors:
FRIGERI C
CARNERA A
FRABONI B
GASPAROTTO A
CASSA A
PRIOLO F
CAMPORESE A
ROSSETTO G
Citation: C. Frigeri et al., DEFECT CHARACTERIZATION IN INP SUBSTRATES IMPLANTED WITH 2 MEV FE IONS, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 193-197
Authors:
WEYHER JL
SONNENBERG K
SCHOBER T
RUCKI A
JAGER W
FRANZOSI P
FRIGERI C
Citation: Jl. Weyher et al., COMPARATIVE-STUDY OF MICRODEFECTS IN DISLOCATION-FREE, HEAVILY SI DOPED VB GAAS BY DSL ETCHING, NIR PHASE-CONTRAST MICROSCOPY, TEM AND X-RAY DIFFUSE-SCATTERING, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 242-247
Authors:
PUTERO M
BURLE N
PELOSI C
FRIGERI C
CHIMENTI E
GUELTON N
Citation: M. Putero et al., X-RAY STUDY OF GAAS GE HETEROSTRUCTURES - RELATIONSHIP BETWEEN INTERFACIAL DEFECTS AND GROWTH-PROCESS/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 213-217
Authors:
FRIGERI C
CARNERA A
GASPAROTTO A
Citation: C. Frigeri et al., ELECTRON-MICROSCOPY STUDY OF FE-IMPLANTED INP, Applied physics A: Materials science & processing, 62(1), 1996, pp. 65-72
Authors:
MARTIN P
FRIGERI C
JIMENEZ J
WEYHER J
Citation: P. Martin et al., A STUDY OF DISLOCATIONS IN GAAS-TE USING ELECTRON AND OPTICAL BEAMS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 225-229
Authors:
PELOSI C
ATTOLINI G
BOCCHI C
FRANZOSI P
FRIGERI C
BERTI M
DRIGO AV
ROMANATO F
Citation: C. Pelosi et al., THE ROLE OF THE V III RATIO IN THE GROWTH AND STRUCTURAL-PROPERTIES OF METALORGANIC VAPOR-PHASE EPITAXY GAAS/GE HETEROSTRUCTURES/, Journal of electronic materials, 24(11), 1995, pp. 1723-1730
Authors:
CARNERA A
GASPAROTTO A
SCORDILLI A
PRIOLO F
FRIGERI C
ROSSETTO G
Citation: A. Carnera et al., MEV ENERGY IMPLANTATION OF FE IN INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 307-310
Authors:
CARNERA A
GASPAROTTO A
TROMBY M
CALDIRONI M
PELLEGRINO S
VIDIMARI F
BOCCHI C
FRIGERI C
Citation: A. Carnera et al., PRODUCTION OF SEMIINSULATING LAYERS IN N-DOPED INP BY FE IMPLANTATION(VOL 76, PG 5085, 1994), Journal of applied physics, 77(8), 1995, pp. 4159-4159
Authors:
FRIGERI C
FERRARI C
FORNARI R
WEYHER JL
LONGO F
GUADALUPI GM
Citation: C. Frigeri et al., STRUCTURAL CHARACTERIZATION OF HEAVILY ZN-DOPED LIQUID ENCAPSULATED CZOCHRALSKI INP, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 120-125
Authors:
FRIGERI C
DIPAOLA A
GAMBACORTI N
RITCHIE DM
LONGO F
DELLAGIOVANNA M
Citation: C. Frigeri et al., TRANSMISSION ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION INVESTIGATION OF IN SEGREGATION IN MOVPE-GROWN INGAAS-BASED MQWS WITH EITHER GAAS ORALGAAS BARRIERS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 346-352
Authors:
NAVA F
CANALI C
CASTALDINI A
CAVALLINI A
DAURIA S
DELPAPA C
FRIGERI C
ZANOTTI L
CETRONIO A
LANZIERI C
ZICHICHI A
Citation: F. Nava et al., INFLUENCE OF ELECTRON TRAPS ON CHARGE-COLLECTION EFFICIENCY IN GAAS RADIATION DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 349(1), 1994, pp. 156-159
Authors:
CARNERA A
GASPAROTTO A
TROMBY M
CALDIRONI M
PELLEGRINO S
VIDIMARI F
BOCCHI C
FRIGERI C
Citation: A. Carnera et al., PRODUCTION OF SEMIINSULATING LAYERS IN N-DOPED INP BY FE IMPLANTATION, Journal of applied physics, 76(9), 1994, pp. 5085-5094
Authors:
FRIGERI C
Citation: C. Frigeri, CHARACTERIZATION OF LEC GAAS BY ELECTRON-BEAM-INDUCED CURRENT ANALYSIS, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 175-179
Authors:
FRIGERI C
WEYHER JL
ALT HC
Citation: C. Frigeri et al., A STUDY OF DISLOCATIONS, PRECIPITATES, AND DEEP-LEVEL EL2 IN LEC GAASGROWN UNDER GA-RICH CONDITIONS, Physica status solidi. a, Applied research, 138(2), 1993, pp. 657-663
Authors:
FRIGERI C
Citation: C. Frigeri, RECENT DEVELOPMENTS IN THE STUDY OF BULK GAAS PROPERTIES BY ELECTRON-MICROSCOPY (VOL 126, PG 91, 1993), Journal of crystal growth, 130(1-2), 1993, pp. 341-341
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