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Results: 1-11 |
Results: 11
STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGE-IMPLANTED AND SI-IMPLANTED SILICON DIOXIDE
Authors: REBOHLE L VONBORANY J GROTZSCHEL R MARKWITZ A SCHMIDT B TYSCHENKO IE SKORUPA W FROB H LEO K
Citation: L. Rebohle et al., STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGE-IMPLANTED AND SI-IMPLANTED SILICON DIOXIDE, Physica status solidi. a, Applied research, 165(1), 1998, pp. 31-35
BLUE AND VIOLET PHOTOLUMINESCENCE FROM HIGH-DOSE SI-IMPLANTED AND GE+-IMPLANTED SILICON DIOXIDE LAYERS()
Authors: REBOHLE L TYSCHENKO IE FROB H LEO K YANKOV RA VONBORANY J KACHURIN GA SKORUPA W
Citation: L. Rebohle et al., BLUE AND VIOLET PHOTOLUMINESCENCE FROM HIGH-DOSE SI-IMPLANTED AND GE+-IMPLANTED SILICON DIOXIDE LAYERS(), Microelectronic engineering, 36(1-4), 1997, pp. 107-110
EXCIMER DYNAMICS IN ULTRATHIN ORGANIC FILMS
Authors: PUECH K FROB H LEO K
Citation: K. Puech et al., EXCIMER DYNAMICS IN ULTRATHIN ORGANIC FILMS, Journal of luminescence, 72-4, 1997, pp. 524-525
STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGERMANIUM-IMPLANTED AND SILICON-IMPLANTED SILICON-DIOXIDE LAYERS
Authors: REBOHLE L VONBORANY J YANKOV RA SKORUPA W TYSCHENKO IE FROB H LEO K
Citation: L. Rebohle et al., STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGERMANIUM-IMPLANTED AND SILICON-IMPLANTED SILICON-DIOXIDE LAYERS, Applied physics letters, 71(19), 1997, pp. 2809-2811
LUMINESCENCE AND STRUCTURAL-PROPERTIES OF MODIFIED AGBR FILMS
Authors: BOHME T FROB H BOTTCHER H
Citation: T. Bohme et al., LUMINESCENCE AND STRUCTURAL-PROPERTIES OF MODIFIED AGBR FILMS, Journal of information recording, 23(3), 1996, pp. 279-288
A STUDY OF THE BLUE PHOTOLUMINESCENCE EMISSION FROM THERMALLY-GROWN, SI-IMPLANTED SIO2-FILMS AFTER SHORT-TIME ANNEALING()
Authors: SKORUPA W YANKOV RA REBOHLE L FROB H BOHME T LEO K TYSCHENKO IE KACHURIN GA
Citation: W. Skorupa et al., A STUDY OF THE BLUE PHOTOLUMINESCENCE EMISSION FROM THERMALLY-GROWN, SI-IMPLANTED SIO2-FILMS AFTER SHORT-TIME ANNEALING(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 106-109
LUMINESCENCE OF ULTRATHIN ORGANIC FILMS - TRANSITION FROM MONOMER TO EXCIMER EMISSION
Authors: PUECH K FROB H HOFFMAN M LEO K
Citation: K. Puech et al., LUMINESCENCE OF ULTRATHIN ORGANIC FILMS - TRANSITION FROM MONOMER TO EXCIMER EMISSION, Optics letters, 21(19), 1996, pp. 1606-1608
ROOM-TEMPERATURE, SHORT-WAVELENGTH (400-500 NM) PHOTOLUMINESCENCE FROM SILICON-IMPLANTED SILICON DIOXIDE FILMS
Authors: SKORUPA W YANKOV RA TYSCHENKO IE FROB H BOHME T LEO K
Citation: W. Skorupa et al., ROOM-TEMPERATURE, SHORT-WAVELENGTH (400-500 NM) PHOTOLUMINESCENCE FROM SILICON-IMPLANTED SILICON DIOXIDE FILMS, Applied physics letters, 68(17), 1996, pp. 2410-2412
INVESTIGATION OF AGBR PHOTOGRAPHIC SYSTEMS WITH SCANNING FORCE MICROSCOPY
Authors: HAEFKE H SCHWARZ UD GUNTHERODT HJ FROB H GERTH G STEIGER R
Citation: H. Haefke et al., INVESTIGATION OF AGBR PHOTOGRAPHIC SYSTEMS WITH SCANNING FORCE MICROSCOPY, Journal of imaging science and technology, 37(6), 1993, pp. 545-551
STRUCTURAL INVESTIGATIONS OF EVAPORATED AGBR AGI LAYERS
Authors: FROB H BOTTCHER H MULLER B WINZER A
Citation: H. Frob et al., STRUCTURAL INVESTIGATIONS OF EVAPORATED AGBR AGI LAYERS, Journal of imaging science and technology, 37(6), 1993, pp. 564-567
MODEL INVESTIGATIONS OF EVAPORATED AGBR AGI LAYERS
Authors: BOTTCHER H FROB H MULLER B WINZER A
Citation: H. Bottcher et al., MODEL INVESTIGATIONS OF EVAPORATED AGBR AGI LAYERS, Journal of Information Recording Materials, 21(2), 1993, pp. 127-136
Risultati: 1-11 |