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Results: 1-25/36
Authors:
KAISER I
NICKEL NH
FUHS W
PILZ W
Citation: I. Kaiser et al., HYDROGEN-MEDIATED STRUCTURAL-CHANGES OF AMORPHOUS AND MICROCRYSTALLINE SILICON, Physical review. B, Condensed matter, 58(4), 1998, pp. 1718-1721
Authors:
SIEBER I
WANDERKA N
URBAN I
DORFEL I
SCHIERHORN E
FENSKE F
FUHS W
Citation: I. Sieber et al., ELECTRON-MICROSCOPIC CHARACTERIZATION OF REACTIVELY SPUTTERED ZNO FILMS WITH DIFFERENT AL-DOPING LEVELS, Thin solid films, 330(2), 1998, pp. 108-113
Authors:
BECKERS I
NICKEL NH
PILZ W
FUHS W
Citation: I. Beckers et al., INFLUENCE OF HYDROGEN ON THE STRUCTURAL ORDER OF MICROCRYSTALLINE SILICON DURING THE GROWTH-PROCESS, Journal of non-crystalline solids, 230, 1998, pp. 847-851
Authors:
RUFF D
MELL H
TOTH L
SIEBER I
FUHS W
Citation: D. Ruff et al., CHARGE-TRANSPORT IN MICROCRYSTALLINE SILICON FILMS, Journal of non-crystalline solids, 230, 1998, pp. 1011-1015
Authors:
LIPS K
KANSCHAT P
WILL D
LERNER C
FUHS W
Citation: K. Lips et al., ESR AND TRANSPORT IN MICROCRYSTALLINE SILICON, Journal of non-crystalline solids, 230, 1998, pp. 1021-1025
Authors:
GUSEV O
BRESLER M
KUZNETSOV A
KUDOYAROVA V
PAK P
TERUKOV E
TSENDIN K
YASSIEVICH I
FUHS W
WEISER G
Citation: O. Gusev et al., ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ER-DOPED HYDROGENATED AMORPHOUS-SILICON, Journal of non-crystalline solids, 230, 1998, pp. 1164-1167
Authors:
LERNER C
LIPS K
FUHS W
Citation: C. Lerner et al., SPIN-DEPENDENT PROCESSES IN A-SI-H SCHOTTKY-BARRIER DIODES, Journal of non-crystalline solids, 230, 1998, pp. 1177-1181
Authors:
WILL S
MELL H
POSCHENRIEDER M
FUHS W
Citation: S. Will et al., A-SI-H DEPOSITED AT HIGH-RATE ON THE CATHODE OF A RF-PECVD REACTOR, Journal of non-crystalline solids, 230, 1998, pp. 29-33
Authors:
STACHOWITZ R
SCHUBERT M
FUHS W
Citation: R. Stachowitz et al., NONRADIATIVE DISTANT PAIR RECOMBINATION IN AMORPHOUS-SILICON, Journal of non-crystalline solids, 230, 1998, pp. 190-196
Authors:
BRESLER M
GUSEV O
KUZNETSOV A
KUDOYAROVA V
TERUKOV E
YASSIEVICH I
FUHS W
ULBER I
WEISER G
Citation: M. Bresler et al., PHOTOLUMINESCENCE AT 1.54 MU-M OF ER-DOPED HYDROGENATED AMORPHOUS-SILICON, Journal of non-crystalline solids, 230, 1998, pp. 394-398
Authors:
TERUKOV EI
KUDOYAROVA VK
KUZNETSOV AN
FUHS W
WEISER G
KUEHNE H
Citation: Ei. Terukov et al., ROOM-TEMPERATURE PHOTOLUMINESCENCE OF AMORPHOUS HYDROGENATED SILICON-CARBIDE DOPED WITH ERBIUM, Journal of non-crystalline solids, 230, 1998, pp. 488-492
Authors:
BREHME S
LENGSFELD P
STAUSS P
LANGE H
FUHS W
Citation: S. Brehme et al., HALL-EFFECT AND RESISTIVITY OF BETA-FESI2 THIN-FILMS AND SINGLE-CRYSTALS, Journal of applied physics, 84(6), 1998, pp. 3187-3196
Authors:
FUHS W
ULBER I
WEISER G
BRESLER MS
GUSEV OB
KUZNETSOV AN
KUDOYAROVA VK
TERUKOV EI
YASSIEVICH IN
Citation: W. Fuhs et al., EXCITATION AND TEMPERATURE QUENCHING OF ER-INDUCED LUMINESCENCE IN A-SI-H(ER), Physical review. B, Condensed matter, 56(15), 1997, pp. 9545-9551
Authors:
HILMER F
RATKA A
VAJEN K
ACKERMANN H
FUHS W
MELSHEIMER O
Citation: F. Hilmer et al., INVESTIGATION OF A DIRECTLY COUPLED PHOTOVOLTAIC PUMPING SYSTEM CONNECTED TO A LARGE ABSORBER FIELD, Solar energy, 61(2), 1997, pp. 65-76
Authors:
GUSEV OB
KUZNETSOV AN
TERUKOV EI
BRESLER MS
KUDOYAROVA VK
YASSIEVICH IN
ZAKHARCHENYA BP
FUHS W
Citation: Ob. Gusev et al., ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ERBIUM-DOPED AMORPHOUS HYDROGENATED SILICON, Applied physics letters, 70(2), 1997, pp. 240-242
Authors:
TERUKOV EI
KUDOYAROVA VK
MEZDROGINA MM
GOLUBEV VG
STURM A
FUHS W
Citation: Ei. Terukov et al., PHOTOLUMINESCENCE AT 1.54 MU-M IN ERBIUM-DOPED AMORPHOUS HYDROGENATEDSILICON, Semiconductors, 30(5), 1996, pp. 440-443
Authors:
SCHUBERT M
STACHOWITZ R
FUHS W
Citation: M. Schubert et al., GEMINATE AND NON-GEMINATE RECOMBINATION IN AMORPHOUS-SILICON (A-SI-H), Journal of non-crystalline solids, 200, 1996, pp. 251-254
Authors:
LIPS K
LERNER C
FUHS W
Citation: K. Lips et al., SEMICLASSICAL MODEL OF ELECTRICALLY DETECTED MAGNETIC-RESONANCE IN UNDOPED A-SI-H, Journal of non-crystalline solids, 200, 1996, pp. 267-270
Authors:
ADRIAENSSENS GJ
BARANOVSKII SD
FUHS W
JANSEN J
OKTU O
Citation: Gj. Adriaenssens et al., LIGHT-INTENSITY DEPENDENCE OF EXCESS CARRIER LIFETIMES, Journal of non-crystalline solids, 200, 1996, pp. 271-275
Authors:
SALEH R
ULBER I
FUHS W
MELL H
Citation: R. Saleh et al., ELECTRON AND HOLE-SPIN DENSITIES IN UNDOPED ILLUMINATED A-SI-H, Journal of non-crystalline solids, 200, 1996, pp. 367-370
Authors:
STACHOWITZ R
SCHUBERT M
FUHS W
Citation: R. Stachowitz et al., NONRADIATIVE RECOMBINATION AND ITS INFLUENCE ON THE LIFETIME DISTRIBUTION IN AMORPHOUS-SILICON (A-SI-H), Physical review. B, Condensed matter, 52(15), 1995, pp. 10906-10914
Authors:
ADRIAENSSENS GJ
BARANOVSKII SD
FUHS W
JANSEN J
OKTU O
Citation: Gj. Adriaenssens et al., PHOTOCONDUCTIVITY RESPONSE-TIME IN AMORPHOUS-SEMICONDUCTORS, Physical review. B, Condensed matter, 51(15), 1995, pp. 9661-9667
Authors:
ULBER I
SALEH R
FUHS W
MELL H
Citation: I. Ulber et al., RECOMBINATION AT DEFECTS IN AMORPHOUS-SILICON (A-SI-H), Journal of non-crystalline solids, 190(1-2), 1995, pp. 9-20
Authors:
BRESLER MS
GUSEV OB
KUDOYAROVA VK
KUZNETSOV AN
PAK PE
TERUKOV EI
YASSIEVICH IN
ZAKHARCHENYA BP
FUHS W
STURN A
Citation: Ms. Bresler et al., ROOM-TEMPERATURE PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON, Applied physics letters, 67(24), 1995, pp. 3599-3601
Authors:
STACHOWITZ R
SCHUBERT M
FUHS W
Citation: R. Stachowitz et al., FREQUENCY-RESOLVED SPECTROSCOPY AND ITS APPLICATION TO LOW-TEMPERATURE GEMINATE RECOMBINATION IN A-SIH, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 70(6), 1994, pp. 1219-1230