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Results: 1-15 |
Results: 15

Authors: Holzl, R Fabry, L Range, KJ
Citation: R. Holzl et al., The linkage between macroscopic gettering mechanisms and electronic configuration of 3d-elements in p/p plus epitaxial silicon wafers, APPL PHYS A, 74(1), 2002, pp. 35-39

Authors: Holzl, R Fabry, L Range, KJ
Citation: R. Holzl et al., Gettering efficiencies for Cu and Ni as a function of size and density of oxygen precipitates in p/p- silicon epitaxial wafers, APPL PHYS A, 73(2), 2001, pp. 137-142

Authors: Holzl, R Huber, A Fabry, L Range, KJ Blietz, M
Citation: R. Holzl et al., Integrity of ultrathin gate oxides with different oxide thickness, substrate wafers and metallic contaminations, APPL PHYS A, 72(3), 2001, pp. 351-356

Authors: Ehmann, T Fabry, L Kotz, L Pahlke, S
Citation: T. Ehmann et al., Ultra-trace analytical monitoring of silicon wafer surfaces by capillary electrophoresis, FRESEN J AN, 371(4), 2001, pp. 407-412

Authors: Hoelzl, R Fabry, L Range, KJ Wahlich, R Kissinger, G
Citation: R. Hoelzl et al., Enhancement of gettering efficiencies of different silicon substrates during a 0.18 mu m LTB CMOS process simulation - Stratigraphy by a novel chemical ultra-trace depth-profiling, MICROEL ENG, 56(1-2), 2001, pp. 153-156

Authors: Streli, C Wobrauschek, P Beckhoff, B Ulm, G Fabry, L Pahlke, S
Citation: C. Streli et al., First results of TXRF measurements of low-Z elements on Si wafer surfaces at the PTB plane grating monochromator beamline for undulator radiation at BESSY II, X-RAY SPECT, 30(1), 2001, pp. 24-31

Authors: Basnar, B Schnoller, J Fottinger, K Friedbacher, G Mayer, U Hoffmann, H Fabry, L
Citation: B. Basnar et al., Characterization of silicon wafers through deposition of self-assembled monolayers, FRESEN J AN, 368(5), 2000, pp. 434-438

Authors: Hoelzl, R Fabry, L Kotz, L Pahlke, S
Citation: R. Hoelzl et al., Routine analysis of ultra pure water by ICP-MS in the low- and sub-ng/L level, FRESEN J AN, 366(1), 2000, pp. 64-69

Authors: Hoelzl, R Range, KJ Fabry, L Hage, J Raineri, V
Citation: R. Hoelzl et al., Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni, MAT SCI E B, 73(1-3), 2000, pp. 95-98

Authors: Prince, GA Capiau, C Deschamps, M Fabry, L Garcon, N Gheysen, D Prieels, JP Thiry, G Van Opstal, O Porter, DD
Citation: Ga. Prince et al., Efficacy and safety studies of a recombinant chimeric respiratory syncytial virus FG glycoprotein vaccine in cotton rats, J VIROLOGY, 74(22), 2000, pp. 10287-10292

Authors: Hoelzl, R Huber, D Range, KJ Fabry, L Hage, J Wahlich, R
Citation: R. Hoelzl et al., Gettering of copper and nickel in p/p(+) epitaxial wafers, J ELCHEM SO, 147(7), 2000, pp. 2704-2710

Authors: Fabry, L Pahlke, S Kotz, L Wobrauschek, P Streli, C
Citation: L. Fabry et al., Novel methods of TXRF analysis for silicon wafer surface inspection, FRESEN J AN, 363(1), 1999, pp. 98-102

Authors: Streli, C Kregsamer, P Wobrauschek, P Gatterbauer, H Pianetta, P Pahlke, S Fabry, L Palmetshofer, L Schmeling, M
Citation: C. Streli et al., Low Z total reflection X-ray fluorescence analysis - challenges and answers, SPECT ACT B, 54(10), 1999, pp. 1433-1441

Authors: Szekely, J Fabry, L Forgacs, G Kontra, G Petranyi, J Esik, O Nemeth, G
Citation: J. Szekely et al., Total body irradiation before bone marrow transplantation - Technique and acute toxicity, STRAH ONKOL, 175(12), 1999, pp. 606-610

Authors: Holzl, R Range, KJ Fabry, L Huber, D
Citation: R. Holzl et al., Calibrated contamination spiking method for silicon wafers in the 10(10)-10(12) atom/cm(2) range, J ELCHEM SO, 146(6), 1999, pp. 2245-2253
Risultati: 1-15 |