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Results: 1-17 |
Results: 17
Review of recent results on spin polarized tunneling and magnetic switching by spin injection
Authors: Fert, A Barthelemy, A Ben Youssef, J Contour, JP Cros, V De Teresa, JM Hamzic, A George, JM Faini, G Grollier, J Jaffres, H Le Gall, H Montaigne, F Pailloux, F Petroff, F
Citation: A. Fert et al., Review of recent results on spin polarized tunneling and magnetic switching by spin injection, MAT SCI E B, 84(1-2), 2001, pp. 1-9
Nano-fabrication with focused ion beams
Authors: Gierak, J Mailly, D Faini, G Pelouard, JL Denk, P Pardo, F Marzin, JY Septier, A Schmid, G Ferre, J Hydman, R Chappert, C Flicstein, J Gayral, B Gerard, JM
Citation: J. Gierak et al., Nano-fabrication with focused ion beams, MICROEL ENG, 57-8, 2001, pp. 865-875
Aharonov-Bohm cages in 2D normal metal networks
Authors: Naud, C Faini, G Mailly, D
Citation: C. Naud et al., Aharonov-Bohm cages in 2D normal metal networks, PHYS REV L, 86(22), 2001, pp. 5104-5107
Magnetic micropatterning of FeNi/FeMn exchange bias bilayers by ion irradiation
Authors: Mougin, A Poppe, S Fassbender, J Hillebrands, B Faini, G Ebels, U Jung, M Engel, D Ehresmann, A Schmoranzer, H
Citation: A. Mougin et al., Magnetic micropatterning of FeNi/FeMn exchange bias bilayers by ion irradiation, J APPL PHYS, 89(11), 2001, pp. 6606-6608
Spin-polarized current induced switching in Co/Cu/Co pillars
Authors: Grollier, J Cros, V Hamzic, A George, JM Jaffres, H Fert, A Faini, G Ben Youssef, J Legall, H
Citation: J. Grollier et al., Spin-polarized current induced switching in Co/Cu/Co pillars, APPL PHYS L, 78(23), 2001, pp. 3663-3665
Coulomb blockade of tunneling through compressible rings formed around an antidot: An explanation for h/2e Aharonov-Bohm oscillations
Authors: Kataoka, M Ford, CJB Faini, G Mailly, D Simmons, MY Ritchie, DA
Citation: M. Kataoka et al., Coulomb blockade of tunneling through compressible rings formed around an antidot: An explanation for h/2e Aharonov-Bohm oscillations, PHYS REV B, 62(8), 2000, pp. R4817-R4820
Enhanced fluctuations of the tunneling density of states near the bottom of a Landau band measured by a local spectrometer
Authors: Holder, JP Savchenko, AK Fal'ko, VI Jouault, B Faini, G Laruelle, F Bedel, E
Citation: Jp. Holder et al., Enhanced fluctuations of the tunneling density of states near the bottom of a Landau band measured by a local spectrometer, PHYS REV L, 84(7), 2000, pp. 1563-1566
Theoretical and experimental studies of magneto-tunnelling in quantum dots
Authors: Boero, M Faini, G Jouault, B Holder, JP Laruelle, F Inkson, JC Savchenko, AK
Citation: M. Boero et al., Theoretical and experimental studies of magneto-tunnelling in quantum dots, J L TEMP PH, 118(5-6), 2000, pp. 427-436
Electroluminescence of Ge/Si self-assembled quantum dots grown by chemicalvapor deposition
Authors: Brunhes, T Boucaud, P Sauvage, S Aniel, F Lourtioz, JM Hernandez, C Campidelli, Y Kermarrec, O Bensahel, D Faini, G Sagnes, I
Citation: T. Brunhes et al., Electroluminescence of Ge/Si self-assembled quantum dots grown by chemicalvapor deposition, APPL PHYS L, 77(12), 2000, pp. 1822-1824
Quantum interference in carbon nanotubes
Authors: Naud, C Faini, G Mailly, D Pascard, H
Citation: C. Naud et al., Quantum interference in carbon nanotubes, CR AC S IIB, 327(9), 1999, pp. 945-951
Near-field imaging of the photocurrent on a patterned Au/GaAs interface with various wavelengths and bias
Authors: Davy, S Spajer, M Almeida, J Generosi, R Cricenti, A Faini, G Coluzza, C
Citation: S. Davy et al., Near-field imaging of the photocurrent on a patterned Au/GaAs interface with various wavelengths and bias, EPJ-APPL PH, 5(3), 1999, pp. 283-288
Damage characterization of anisotropic InP patterns obtained by SiCl4 reactive ion etching
Authors: Manin-Ferlazzo, L Carcenac, F Teissier, R Faini, G Mailly, D
Citation: L. Manin-ferlazzo et al., Damage characterization of anisotropic InP patterns obtained by SiCl4 reactive ion etching, MICROEL ENG, 46(1-4), 1999, pp. 331-334
Transition from an antidot to a dot array in etched Si/SiGe heterostructures: Influence of the etch depth
Authors: Hameau, S Guldner, Y Ferreira, R Zanier, S Faini, G Cambril, E Campidelli, Y
Citation: S. Hameau et al., Transition from an antidot to a dot array in etched Si/SiGe heterostructures: Influence of the etch depth, PHYS REV B, 60(23), 1999, pp. 15965-15969
Magnetotransport theory in quantum dots: 3D-0D and 2D-0D tunneling and angular momentum selection rules
Authors: Jouault, B Boero, M Faini, G Inkson, JC
Citation: B. Jouault et al., Magnetotransport theory in quantum dots: 3D-0D and 2D-0D tunneling and angular momentum selection rules, PHYS REV B, 59(7), 1999, pp. 4966-4972
Detection of Coulomb charging around an antidot in the quantum Hall regime
Authors: Kataoka, M Ford, CJB Faini, G Mailly, D Simmons, MY Mace, DR Liang, CT Ritchie, DA
Citation: M. Kataoka et al., Detection of Coulomb charging around an antidot in the quantum Hall regime, PHYS REV L, 83(1), 1999, pp. 160-163
Photocurrent near-field microscopy of Schottky barriers
Authors: Coluzza, C Di Claudio, G Davy, S Spajer, M Courjon, D Cricenti, A Generosi, R Faini, G Almeida, J Conforto, E Margaritondo, G
Citation: C. Coluzza et al., Photocurrent near-field microscopy of Schottky barriers, J MICROSC O, 194, 1999, pp. 401-406
Anisotropic propagation of light in planar waveguides containing InGaAs-InP quantum wells
Authors: Guettler, T Krebs, O Voisin, P Faini, G Rondi, D Alibert, C
Citation: T. Guettler et al., Anisotropic propagation of light in planar waveguides containing InGaAs-InP quantum wells, APPL PHYS L, 75(13), 1999, pp. 1890-1892
Risultati: 1-17 |