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Results: 26-30/30
Authors:
Wang, H
Farias, GA
Freire, VN
Citation: H. Wang et al., Electric field effects on the confinement properties of GaN/AlxGa1-xN zincblende and wurtzite nonabrupt quantum wells, BRAZ J PHYS, 29(4), 1999, pp. 670-674
Authors:
Shi, JM
Freire, VN
Farias, GA
Citation: Jm. Shi et al., Energy level broadening control in quantum dots by interfacial doping, SOL ST COMM, 113(2), 1999, pp. 115-119
Authors:
Wang, H
Farias, GA
Freire, VN
Citation: H. Wang et al., Graded interface effects on the carriers confinement in single GaN/AlxGa1-xN wurtzite quantum wells, SOL ST COMM, 110(10), 1999, pp. 587-592
Authors:
Oliveira, LO
Farias, GA
Freire, VN
Ferreira, EC
da Costa, JAP
Citation: Lo. Oliveira et al., Resonances in GaAs/AlxGa1-xAs heterojunctions due to Si shallow donors related protrusions, PHYS ST S-B, 210(2), 1998, pp. 683-687
Authors:
de Sousa, JS
Farias, GA
Freire, VN
da Silva, EF
Citation: Js. De Sousa et al., Strong interface effects in graded SiO2/Si/SiO2 quantum wells, J APPL PHYS, 84(9), 1998, pp. 5369-5371