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Results: 1-8 |
Results: 8
Transient effects in PD SOINMOSFETs
Authors: Okhonin, S Nagoga, M Sallese, JM Fazan, P Faynot, O Pontcharra, J Cristoloveanu, S
Citation: S. Okhonin et al., Transient effects in PD SOINMOSFETs, MICROEL ENG, 59(1-4), 2001, pp. 469-473
Compact analytical modeling of SOI partially depleted MOSFETs with LETISOI
Authors: Faynot, O Poiroux, T Pelloie, JL
Citation: O. Faynot et al., Compact analytical modeling of SOI partially depleted MOSFETs with LETISOI, SOL ST ELEC, 45(4), 2001, pp. 599-605
A physically based relation between extracted threshold voltage and surface potential flat-band voltage for MOSFET compact modeling
Authors: Benson, J D'Halleweyn, NV Redman-White, W Easson, CA Uren, MJ Faynot, O Pelloie, JL
Citation: J. Benson et al., A physically based relation between extracted threshold voltage and surface potential flat-band voltage for MOSFET compact modeling, IEEE DEVICE, 48(5), 2001, pp. 1019-1021
Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1V)
Authors: Ferlet-Cavrois, V Paillet, P Musseau, O Leray, JL Faynot, O Raynaud, C Pelloie, JL
Citation: V. Ferlet-cavrois et al., Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1V), IEEE NUCL S, 47(3), 2000, pp. 613-619
CMOS/SOI technologies for low-power and low-voltage circuits
Authors: Pelloie, JL Raynaud, C Faynot, O Grouillet, A de Pontcharra, JD
Citation: Jl. Pelloie et al., CMOS/SOI technologies for low-power and low-voltage circuits, MICROEL ENG, 48(1-4), 1999, pp. 327-334
Designing MOS/SOI transistors for high frequency and low voltage applications
Authors: Ferlet-Cavrois, V Bracale, A Marcandella, C Musseau, O Pelloie, JL Raynaud, C Faynot, O
Citation: V. Ferlet-cavrois et al., Designing MOS/SOI transistors for high frequency and low voltage applications, MICROEL ENG, 48(1-4), 1999, pp. 351-354
Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology.
Authors: Dentan, M Abbon, P Borgeaud, P Delagnes, E Fourches, N Lachartre, D Lugiez, F Paul, B Rouger, M Truche, R Blanc, JP Faynot, O Leroux, C Delevoye-Orsier, E Pelloie, JL de Pontcharra, J Flament, O Guebhard, JM Leray, JL Montaron, J Musseau, O Vitez, A Le Mouellic, C Corbiere, T Dantec, A Festes, G Martinez, J Rodde, K
Citation: M. Dentan et al., Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology., IEEE NUCL S, 46(4), 1999, pp. 822-828
Total dose induced latch in short channel NMOS/SOI transistors
Authors: Ferlet-Cavrois, V Quoizola, S Musseau, O Flament, O Leray, JL Pelloie, JL Raynaud, C Faynot, O
Citation: V. Ferlet-cavrois et al., Total dose induced latch in short channel NMOS/SOI transistors, IEEE NUCL S, 45(6), 1998, pp. 2458-2466
Risultati: 1-8 |