Authors:
Shapiro, NA
Feick, H
Gardner, NF
Gotz, WK
Waltereit, P
Speck, JS
Weber, ER
Citation: Na. Shapiro et al., Relation between structural parameters and the effective electron-hole separation in InGaN/GaN quantum wells, PHYS ST S-B, 228(1), 2001, pp. 147-151
Authors:
Lindstrom, G
Ahmed, M
Albergo, S
Allport, P
Anderson, D
Andricek, L
Angarano, MM
Augelli, V
Bacchetta, N
Bartalini, P
Bates, R
Biggeri, U
Bilei, GM
Bisello, D
Boemi, D
Borchi, E
Botila, T
Brodbeck, TJ
Bruzzi, M
Budzynski, T
Burger, P
Campabadal, F
Casse, G
Catacchini, E
Chilingarov, A
Ciampolini, P
Cindro, V
Costa, MJ
Creanza, D
Clauws, P
Da Via, C
Davies, G
De Boer, W
Dell'Orso, R
De Palma, M
Dezillie, B
Eremin, V
Evrard, O
Fallica, G
Fanourakis, G
Feick, H
Focardi, E
Fonseca, L
Fretwurst, E
Fuster, J
Gabathuler, K
Glaser, M
Grabiec, P
Grigoriev, E
Hall, G
Hanlon, M
Hauler, F
Heising, S
Holmes-Siedle, A
Horisberger, R
Hughes, G
Huhtinen, M
Ilyashenko, I
Ivanov, A
Jones, BK
Jungermann, L
Kaminsky, A
Kohout, Z
Kramberger, G
Kuhnke, M
Kwan, S
Lemeilleur, F
Leroy, C
Letheren, M
Li, Z
Ligonzo, T
Linhart, V
Litovchenko, P
Loukas, D
Lozano, M
Luczynski, Z
Lutz, G
MacEvoy, B
Manolopoulos, S
Markou, A
Martinez, C
Messineo, A
Mikuz, M
Moll, M
Nossarzewska, E
Ottaviani, G
Oshea, V
Parrini, G
Passeri, D
Petre, D
Pickford, A
Pintilie, I
Pintilie, L
Pospisil, S
Potenza, R
Raine, C
Rafi, JM
Ratoff, PN
Richter, RH
Riedler, P
Roe, S
Roy, P
Ruzin, A
Ryazanov, AI
Santocchia, A
Schiavulli, L
Sicho, P
Siotis, I
Sloan, T
Slysz, W
Smith, K
Solanky, M
Sopko, B
Stolze, K
Avset, BS
Svensson, B
Tivarus, C
Tonelli, G
Tricomi, A
Tzamarias, S
Valvo, G
Vasilescu, A
Vayaki, A
Verbitskaya, E
Verdini, P
Vrba, V
Watts, S
Weber, ER
Wegrzecki, M
Wegrzecka, I
Weilhammer, P
Wheadon, R
Wilburn, C
Wilhelm, I
Wunstorf, R
Wustenfeld, J
Wyss, J
Zankel, K
Zabierowski, P
Zontar, D
Citation: G. Lindstrom et al., Radiation hard silicon detectors - developments by the RD48 (ROSE) collaboration, NUCL INST A, 466(2), 2001, pp. 308-326
Authors:
Lindstrom, G
Ahmed, M
Albergo, S
Allport, P
Anderson, D
Andricek, L
Angarano, MM
Augelli, V
Bacchetta, N
Bartalini, P
Bates, R
Biggeri, U
Bilei, GM
Bisello, D
Boemi, D
Borchi, E
Botila, T
Brodbeck, TJ
Bruzzi, M
Budzynski, T
Burger, P
Campabadal, F
Casse, G
Catacchini, E
Chilingarov, A
Ciampolini, P
Cindro, V
Costa, MJ
Creanza, D
Clauws, P
Da Via, C
Davies, G
De Boer, W
Dell'Orso, R
De Palma, M
Dezillie, B
Eremin, V
Evrard, O
Fallica, G
Fanourakis, G
Feick, H
Focardi, E
Fonseca, L
Fretwurst, E
Fuster, J
Gabathuler, K
Glaser, M
Grabiec, P
Grigoriev, E
Hall, G
Hanlon, M
Hauler, F
Heising, S
Holmes-Siedle, A
Horisberger, R
Hughes, G
Huhtinen, M
Ilyashenko, I
Ivanov, A
Jones, BK
Jungermann, L
Kaminsky, A
Kohout, Z
Kramberger, C
Kuhnke, M
Kwan, S
Lemeilleur, F
Leroy, C
Letheren, M
Li, Z
Ligonzo, T
Linhart, V
Litovchenko, P
Loukas, D
Lozano, M
Luczynski, Z
Lutz, G
MacEvoy, B
Manolopoulos, S
Markou, A
Martinez, C
Messineo, A
Miku, M
Moll, M
Nossarzewska, E
Ottaviani, G
Oshea, V
Parrini, G
Passeri, D
Petre, D
Pickford, A
Pintilie, I
Pintilie, L
Pospisil, S
Potenza, R
Radicci, V
Raine, C
Rafi, JM
Ratoff, PN
Richter, RH
Riedler, P
Roe, S
Roy, P
Ruzin, A
Ryazanov, AI
Santocchia, A
Schiavulli, L
Sicho, P
Siotis, I
Sloan, T
Slysz, W
Smith, K
Solanky, M
Sopko, B
Stolze, K
Avset, BS
Svensson, B
Tivarus, C
Tonelli, G
Tricomi, A
Tzamarias, S
Valvo, G
Vasilescu, A
Vayaki, A
Verbitskaya, E
Verdini, P
Vrba, V
Watts, S
Weber, ER
Wegrzecki, M
Wegrzecka, I
Weilhammer, P
Wheadon, R
Wilburn, C
Wilhelm, I
Wunstorf, R
Wustenfeld, J
Wyss, J
Zankel, K
Zabierowski, P
Zontar, D
Citation: G. Lindstrom et al., Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration, NUCL INST A, 465(1), 2001, pp. 60-69
Authors:
Nozaki, S
Feick, H
Weber, ER
Micovic, M
Nguyen, C
Citation: S. Nozaki et al., Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors, APPL PHYS L, 78(19), 2001, pp. 2896-2898
Authors:
Shapiro, NA
Kim, Y
Feick, H
Weber, ER
Perlin, P
Yang, JW
Akasaki, I
Amano, H
Citation: Na. Shapiro et al., Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain, PHYS REV B, 62(24), 2000, pp. R16318-R16321