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Results: 1-10 |
Results: 10
Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates
Authors: Ragnarsson, LA Guha, S Bojarczuk, NA Cartier, E Fischetti, MV Rim, K Karasinski, J
Citation: La. Ragnarsson et al., Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates, IEEE ELEC D, 22(10), 2001, pp. 490-492
Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies
Authors: Tsang, JC Fischetti, MV
Citation: Jc. Tsang et Mv. Fischetti, Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies, MICROEL REL, 41(9-10), 2001, pp. 1465-1470
Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-kappa insulator: The role of remote phonon scattering
Authors: Fischetti, MV Neumayer, DA Cartier, EA
Citation: Mv. Fischetti et al., Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-kappa insulator: The role of remote phonon scattering, J APPL PHYS, 90(9), 2001, pp. 4587-4608
Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability
Authors: Fischetti, MV Laux, SE
Citation: Mv. Fischetti et Se. Laux, Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability, J APPL PHYS, 89(2), 2001, pp. 1205-1231
Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures
Authors: Fischetti, MV
Citation: Mv. Fischetti, Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures, J APPL PHYS, 89(2), 2001, pp. 1232-1250
Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion
Authors: Gamiz, F Fischetti, MV
Citation: F. Gamiz et Mv. Fischetti, Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion, J APPL PHYS, 89(10), 2001, pp. 5478-5487
Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts
Authors: Rivas, C Lake, R Klimeck, G Frensley, WR Fischetti, MV Thompson, PE Rommel, SL Berger, PR
Citation: C. Rivas et al., Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts, APPL PHYS L, 78(6), 2001, pp. 814-816
Performance degradation of small silicon devices caused by long-range Coulomb interactions
Authors: Fischetti, MV Laux, SE
Citation: Mv. Fischetti et Se. Laux, Performance degradation of small silicon devices caused by long-range Coulomb interactions, APPL PHYS L, 76(16), 2000, pp. 2277-2279
Master-equation approach to the study of electronic transport in small semiconductor devices
Authors: Fischetti, MV
Citation: Mv. Fischetti, Master-equation approach to the study of electronic transport in small semiconductor devices, PHYS REV B, 59(7), 1999, pp. 4901-4917
Comment on "Influence of the doping element on the electron mobility in n silicon" [J-Appl. Phys. 83, 3096, (1998)]
Authors: Fischetti, MV Laux, SE
Citation: Mv. Fischetti et Se. Laux, Comment on "Influence of the doping element on the electron mobility in n silicon" [J-Appl. Phys. 83, 3096, (1998)], J APPL PHYS, 85(11), 1999, pp. 7984-7985
Risultati: 1-10 |