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Results:
1-17
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Results: 17
Authors:
Krishnan, AT
Bae, SH
Fonash, SJ
Citation: At. Krishnan et al., Fabrication of microcrystalline silicon TFTs using a high-density plasma approach, IEEE ELEC D, 22(8), 2001, pp. 399-401
Authors:
Nam, WJ
Bae, S
Kalkan, AK
Fonash, SJ
Citation: Wj. Nam et al., Nano- and microchannel fabrication using column/void network deposited silicon, J VAC SCI A, 19(4), 2001, pp. 1229-1233
Authors:
Suliman, SA
Gollagunta, N
Trabzon, L
Hao, J
Ridley, RS
Knoedler, CM
Dolny, GM
Awadelkarim, OO
Fonash, SJ
Citation: Sa. Suliman et al., The dependence of UMOSFET characteristics and reliability on geometry and processing, SEMIC SCI T, 16(6), 2001, pp. 447-454
Authors:
Suliman, SA
Awadelkarim, OO
Fonash, SJ
Dolny, GM
Hao, J
Ridley, RS
Knoedler, CM
Citation: Sa. Suliman et al., The effects of channel boron-doping on the performance and hot electron reliability of N-channel trend UMOSFETs, SOL ST ELEC, 45(5), 2001, pp. 655-661
Authors:
Cuiffi, JD
Hayes, DJ
Fonash, SJ
Brown, KN
Jones, AD
Citation: Jd. Cuiffi et al., Desorption-ionization mass spectrometry using deposited nanostructured silicon films, ANALYT CHEM, 73(6), 2001, pp. 1292-1295
Authors:
Bae, S
Farber, DG
Fonash, SJ
Citation: S. Bae et al., Chemical bonding and stability of 50 degrees C plasma-deposited silicon nitrides, EL SOLID ST, 3(1), 2000, pp. 41-43
Authors:
Bae, S
Farber, DG
Fonash, SJ
Citation: S. Bae et al., Characteristics of low-temperature silicon nitride (SiNx : H) using electron cyclotron resonance plasma, SOL ST ELEC, 44(8), 2000, pp. 1355-1360
Authors:
Krishnan, AT
Bae, S
Fonash, SJ
Citation: At. Krishnan et al., Low temperature microcrystalline silicon thin film resistors on glass substrates, SOL ST ELEC, 44(7), 2000, pp. 1163-1168
Authors:
Cheng, SC
Pantano, CG
Kalkan, AK
Bae, SH
Fonash, SJ
Citation: Sc. Cheng et al., TEM characterisation of an interfacial layer between silicon and glass, PHYS C GLAS, 41(3), 2000, pp. 136-139
Authors:
Kalkan, AK
Bae, SH
Li, HD
Hayes, DJ
Fonash, SJ
Citation: Ak. Kalkan et al., Nanocrystalline Si thin films with arrayed void-column network deposited by high density plasma, J APPL PHYS, 88(1), 2000, pp. 555-561
Authors:
Kalkan, AK
Fonash, SJ
Cheng, SC
Citation: Ak. Kalkan et al., Band-tail photoluminescence in nanocrystalline Si, APPL PHYS L, 77(1), 2000, pp. 55-57
Authors:
Bae, S
Fonash, SJ
Citation: S. Bae et Sj. Fonash, Defined crystallization of amorphous-silicon films using contact printing, APPL PHYS L, 76(5), 2000, pp. 595-597
Authors:
Okandan, M
Fonash, SJ
Maiti, B
Tseng, HH
Tobin, P
Citation: M. Okandan et al., Wearout, quasi breakdown, and annealing of ultrathin dielectrics - Impact on complementary metal oxide semiconductor performance and reliability, EL SOLID ST, 2(11), 1999, pp. 583-584
Authors:
Bae, S
Fonash, SJ
Citation: S. Bae et Sj. Fonash, Assessment of as-deposited microcrystalline silicon films on polymer substrates using electron cyclotron resonance-plasma enhanced chemical vapor deposition, J VAC SCI A, 17(4), 1999, pp. 1987-1990
Authors:
Fonash, SJ
Citation: Sj. Fonash, Plasma processing damage in etching and deposition, IBM J RES, 43(1-2), 1999, pp. 103-107
Authors:
Farber, DG
Bae, S
Okandan, M
Reber, DM
Kuzma, T
Fonash, SJ
Citation: Dg. Farber et al., Pathway to depositing device-quality 50 degrees C silicon nitride in a high-density plasma system, J ELCHEM SO, 146(6), 1999, pp. 2254-2257
Authors:
Wang, YZ
Fonash, SJ
Awadelkarim, OO
Gu, T
Citation: Yz. Wang et al., Crystallization of a-Si : H on glass for active layers in thin film transistors - Effects of glass coating, J ELCHEM SO, 146(1), 1999, pp. 299-305
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1-17
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