Authors: Fonthal, G Tobon, LE Quintero, J Piraquive, N Ariza-Calderon, H

Citation: G. Fonthal et al., The hot carrier temperature and the impurity band in Kane's theory for heavily doped semiconductor photoluminescence analysis, MOD PHY L B, 15(17-19), 2001, pp. 692-695

Authors: Fonthal, G de los Rios, M Quintero, J Piraquive, N Ariza-Calderon, H

Citation: G. Fonthal et al., The hot carrier temperature in the analysis of the free to acceptor photoluminescence transition, MOD PHY L B, 15(17-19), 2001, pp. 696-699

Authors: Fonthal, G Moros, J

Citation: G. Fonthal et J. Moros, Correlation between band tall depth and potential originated by impuritiesin n-type and weakly compensated semiconductors, REV MEX FIS, 47(1), 2001, pp. 50-53

Authors: Cadenas, R Perez, FV Fonthal, G Duran, L Palmar, R

Citation: R. Cadenas et al., Growth, characterization and comparative analysis of CuGaxIn1-xSe2 alloys, REV MEX FIS, 46(6), 2000, pp. 572-575

Authors: Fonthal, G Tirado-Mejia, L Marin-Hurtado, JI Ariza-Calderon, H Mendoza-Alvarez, JG

Citation: G. Fonthal et al., Temperature dependence of the band gap energy of crystalline CdTe, J PHYS CH S, 61(4), 2000, pp. 579-583