Citation: J. Stichlmair et T. Frey, Mixed-integer nonlinear programming optimization of reactive distillation processes, IND ENG RES, 40(25), 2001, pp. 5978-5982
Authors:
Frey, T
Steiner, E
Wuillemin, D
Sturzenegger, M
Citation: T. Frey et al., Tremper - A versatile tool for high-temperature chemical reactivity studies under concentrated solar radiation, J SOL ENERG, 123(2), 2001, pp. 147-152
Authors:
Fernandez, JRL
Araujo, CM
da Silva, AF
Leite, JR
Sernelius, BE
Tabata, A
Abramof, E
Chitta, VA
Persson, C
Ahuja, R
Pepe, I
As, DJ
Frey, T
Schikora, D
Lischka, K
Citation: Jrl. Fernandez et al., Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems, J CRYST GR, 231(3), 2001, pp. 420-427
Authors:
Frey, T
As, DJ
Bartels, M
Pawlis, A
Lischka, K
Tabata, A
Fernandez, JRL
Silva, MTO
Leite, JR
Haug, C
Brenn, R
Citation: T. Frey et al., Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures, J APPL PHYS, 89(5), 2001, pp. 2631-2634
Authors:
Husberg, O
Khartchenko, A
As, DJ
Vogelsang, H
Frey, T
Schikora, D
Lischka, K
Noriega, OC
Tabata, A
Leite, JR
Citation: O. Husberg et al., Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructures, APPL PHYS L, 79(9), 2001, pp. 1243-1245
Authors:
Fernandez, JRL
Chitta, VA
Abramof, E
da Silva, AF
Leite, JR
Tabata, A
As, DJ
Frey, T
Schikora, D
Lischka, K
Citation: Jrl. Fernandez et al., Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature, MRS I J N S, 5, 2000, pp. NIL_191-NIL_196
Authors:
Brenn, R
Jamieson, DN
Cimmino, A
Lee, KK
Frey, T
As, DJ
Prawer, S
Citation: R. Brenn et al., Topographical structure of MBE grown cubic InxGa1-xN films studied with a MeV ion microprobe and by AFM, NUCL INST B, 161, 2000, pp. 435-440
Authors:
Lemos, V
Silveira, E
Leite, JR
Tabata, A
Trentin, R
Scolfaro, LMR
Frey, T
As, DJ
Schikora, D
Lischka, K
Citation: V. Lemos et al., Evidence for phase-separated quantum dots in cubic InGaN layers from resonant Raman scattering, PHYS REV L, 84(16), 2000, pp. 3666-3669
Authors:
As, DJ
Frey, T
Schikora, D
Lischka, K
Cimalla, V
Pezoldt, J
Goldhahn, R
Kaiser, S
Gebhardt, W
Citation: Dj. As et al., Cubic GaN epilayers grown by molecular beam epitaxy on thin beta-SiC/Si (001) substrates, APPL PHYS L, 76(13), 2000, pp. 1686-1688
Authors:
Holst, J
Hoffmann, A
Broser, I
Rudloff, D
Bertram, F
Riemann, T
Christen, J
Frey, T
As, DJ
Schikora, D
Lischka, K
Citation: J. Holst et al., Impact of structural properties on the mechanisms of optical amplificationin cubic GaInN, PHYS ST S-B, 216(1), 1999, pp. 471-476