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Results: 1-10 |
Results: 10
RUTHERFORD BACKSCATTERING ANALYSIS OF DAMAGE IN ION-IMPLANTED GAAS AL0.44GA0.56AS/
Authors: WENDLER E GAIDUK PI
Citation: E. Wendler et Pi. Gaiduk, RUTHERFORD BACKSCATTERING ANALYSIS OF DAMAGE IN ION-IMPLANTED GAAS AL0.44GA0.56AS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 488-493
FORMATION OF DISCONTINUOUS TRACKS IN SINGLE-CRYSTALLINE INP BY 250-MEV XE-ION IRRADIATION
Authors: HERRE O WESCH W WENDLER E GAIDUK PI KOMAROV FF KLAUMUNZER S MEIER P
Citation: O. Herre et al., FORMATION OF DISCONTINUOUS TRACKS IN SINGLE-CRYSTALLINE INP BY 250-MEV XE-ION IRRADIATION, Physical review. B, Condensed matter, 58(8), 1998, pp. 4832-4837
EFFECT OF COMPOSITION AND ANNEALING ON STRUCTURAL DEFECTS IN HIGH-DOSE ARSENIC-IMPLANTED SI1-XGEX ALLOYS
Authors: GAIDUK PI TISHKOV VS SHIRYAEV SY LARSEN AN
Citation: Pi. Gaiduk et al., EFFECT OF COMPOSITION AND ANNEALING ON STRUCTURAL DEFECTS IN HIGH-DOSE ARSENIC-IMPLANTED SI1-XGEX ALLOYS, Journal of applied physics, 84(8), 1998, pp. 4185-4192
FORMATION OF SEGREGATED CELL STRUCTURE FOR MBE GROWTH OF MISMATCHED SEMICONDUCTORS
Authors: GAIDUK PI KOMAROV FF
Citation: Pi. Gaiduk et Ff. Komarov, FORMATION OF SEGREGATED CELL STRUCTURE FOR MBE GROWTH OF MISMATCHED SEMICONDUCTORS, Thin solid films, 306(2), 1997, pp. 352-355
ION MASS AND TEMPERATURE-DEPENDENCE OF DAMAGE PRODUCTION IN ION-IMPLANTED INP
Authors: WENDLER E OPFERMANN T GAIDUK PI
Citation: E. Wendler et al., ION MASS AND TEMPERATURE-DEPENDENCE OF DAMAGE PRODUCTION IN ION-IMPLANTED INP, Journal of applied physics, 82(12), 1997, pp. 5965-5975
DAMAGE PRODUCTION IN GAAS DURING MEV ION-IMPLANTATION
Authors: HERRE O WENDLER E ACHTZIGER N LICHT T REISLOHNER U RUB M BACHMANN T WESCH W GAIDUK PI KOMAROV FF
Citation: O. Herre et al., DAMAGE PRODUCTION IN GAAS DURING MEV ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 230-235
INFLUENCE OF DAMAGE ON THE FORMATION OF COSI2 BY CO IMPLANTATION
Authors: ZENTGRAF A GARTNER K SCHIPPEL S GAIDUK PI
Citation: A. Zentgraf et al., INFLUENCE OF DAMAGE ON THE FORMATION OF COSI2 BY CO IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 114(1-2), 1996, pp. 46-55
RAPID THERMAL ANNEALING OF ARSENIC-IMPLANTED SI0.6GE0.4 ALLOYS - TEMPERATURE EFFECTS
Authors: TISHKOV VS GAIDUK PI SHIRYAEV SY LARSEN AN
Citation: Vs. Tishkov et al., RAPID THERMAL ANNEALING OF ARSENIC-IMPLANTED SI0.6GE0.4 ALLOYS - TEMPERATURE EFFECTS, Applied physics letters, 68(5), 1996, pp. 655-657
EFFECT OF KR-MIXING AND THERMAL-TREATMENT ON CO-SILICIDE FORMATION()
Authors: GAIDUK PI KOMAROV FF WITZMANN A ZENTGRAF A SCHIPPEL S
Citation: Pi. Gaiduk et al., EFFECT OF KR-MIXING AND THERMAL-TREATMENT ON CO-SILICIDE FORMATION(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 94(3), 1994, pp. 231-236
LOW-TEMPERATURE RECRYSTALLIZATION OF ION-IMPLANTED INP
Authors: MULLER P WESCH W SOLOVYEV VS GAIDUK PI WENDLER E KOMAROV FF GOTZ G
Citation: P. Muller et al., LOW-TEMPERATURE RECRYSTALLIZATION OF ION-IMPLANTED INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 721-725
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