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Results: 1-19 |
Results: 19
A STUDY OF THE GROWTH-MECHANISM AND PROPERTIES OF MICROCRYSTALLINE SILICON-GERMANIUM
Authors: GANGULY G FUKAWA M IKEDA T MATSUDA A
Citation: G. Ganguly et al., A STUDY OF THE GROWTH-MECHANISM AND PROPERTIES OF MICROCRYSTALLINE SILICON-GERMANIUM, Journal of non-crystalline solids, 230, 1998, pp. 1069-1073
REEXAMINATION OF HIGH DRIFT MOBILITY A-SI-H
Authors: KOCKA J STUCHLIKOVA H FEJFAR A GANGULY G SAKATA I MATSUDA A JUSKA G
Citation: J. Kocka et al., REEXAMINATION OF HIGH DRIFT MOBILITY A-SI-H, Journal of non-crystalline solids, 230, 1998, pp. 229-232
ELECTRON AND ION ENERGY CONTROLS IN A RADIO-FREQUENCY DISCHARGE PLASMA WITH SILANE
Authors: KATO K IIZUKA S GANGULY G IKEDA T MATSUDA A SATO N
Citation: K. Kato et al., ELECTRON AND ION ENERGY CONTROLS IN A RADIO-FREQUENCY DISCHARGE PLASMA WITH SILANE, JPN J A P 1, 36(7B), 1997, pp. 4547-4550
A NEW DEPOSITION PARAMETER TO CONTROL THE CARRIER DRIFT MOBILITY IN A-SI-H
Authors: GANGULY G MATSUDA A
Citation: G. Ganguly et A. Matsuda, A NEW DEPOSITION PARAMETER TO CONTROL THE CARRIER DRIFT MOBILITY IN A-SI-H, Journal of non-crystalline solids, 200, 1996, pp. 1003-1006
TIME-OF-FLIGHT MOBILITY MEASUREMENTS IN A-SI-H GROWN UNDER CONTROLLED-ENERGY ION-BOMBARDMENT
Authors: GANGULY G SAKATA I MATSUDA A
Citation: G. Ganguly et al., TIME-OF-FLIGHT MOBILITY MEASUREMENTS IN A-SI-H GROWN UNDER CONTROLLED-ENERGY ION-BOMBARDMENT, Journal of non-crystalline solids, 200, 1996, pp. 300-303
ROLE OF HYDROGEN DILUTION IN IMPROVEMENT OF A-SIGE-H ALLOYS
Authors: GANGULY G MATSUDA A
Citation: G. Ganguly et A. Matsuda, ROLE OF HYDROGEN DILUTION IN IMPROVEMENT OF A-SIGE-H ALLOYS, Journal of non-crystalline solids, 200, 1996, pp. 559-562
HYDROGENATED MICROCRYSTALLINE SILICON-GERMANIUM - A BOTTOM CELL MATERIAL FOR AMORPHOUS SILICON-BASED TANDEM SOLAR-CELLS
Authors: GANGULY G IKEDA T NISHIMIYA T SAITOH K KONDO M MATSUDA A
Citation: G. Ganguly et al., HYDROGENATED MICROCRYSTALLINE SILICON-GERMANIUM - A BOTTOM CELL MATERIAL FOR AMORPHOUS SILICON-BASED TANDEM SOLAR-CELLS, Applied physics letters, 69(27), 1996, pp. 4224-4226
ABSENCE OF CORRELATION BETWEEN DISORDER AND DEFECT DENSITY IN HYDROGENATED AMORPHOUS-SILICON
Authors: GANGULY G SAKATA I OKUSHI H MATSUDA A
Citation: G. Ganguly et al., ABSENCE OF CORRELATION BETWEEN DISORDER AND DEFECT DENSITY IN HYDROGENATED AMORPHOUS-SILICON, JPN J A P 2, 34(3A), 1995, pp. 277-280
RELIABILITY ISSUES IN PLATED-THROUGH-HOLES DUE TO INSERTION-MOUNT COMPLIANT-PIN CONNECTORS
Authors: GANGULY G DASGUPTA A
Citation: G. Ganguly et A. Dasgupta, RELIABILITY ISSUES IN PLATED-THROUGH-HOLES DUE TO INSERTION-MOUNT COMPLIANT-PIN CONNECTORS, Journal of electronic packaging, 117(2), 1995, pp. 147-152
IMPROVEMENT OF HYDROGENATED AMORPHOUS-SILICON GERMANIUM ALLOYS USING LOW-POWER DISILANE-GERMANE DISCHARGES WITHOUT HYDROGEN DILUTION
Authors: MATSUDA A GANGULY G
Citation: A. Matsuda et G. Ganguly, IMPROVEMENT OF HYDROGENATED AMORPHOUS-SILICON GERMANIUM ALLOYS USING LOW-POWER DISILANE-GERMANE DISCHARGES WITHOUT HYDROGEN DILUTION, Applied physics letters, 67(9), 1995, pp. 1274-1276
THE EFFECT OF MESH BIAS AND SUBSTRATE BIAS ON THE PROPERTIES OF A-SI-H DEPOSITED BY TRIODE PLASMA CHEMICAL-VAPOR-DEPOSITION
Authors: OSBORNE IS HATA N GANGULY G MATSUDA A
Citation: Is. Osborne et al., THE EFFECT OF MESH BIAS AND SUBSTRATE BIAS ON THE PROPERTIES OF A-SI-H DEPOSITED BY TRIODE PLASMA CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 33(10), 1994, pp. 5663-5667
GROWTH-PROCESS OF A-SI-H
Authors: GANGULY G MATSUDA A
Citation: G. Ganguly et A. Matsuda, GROWTH-PROCESS OF A-SI-H, Optoelectronics, 9(3), 1994, pp. 269-276
PRECURSOR LIFETIME ESTIMATION BY ULTRAVIOLET-LASER MODULATION OF A HYDROGENATED AMORPHOUS-SILICON GROWTH SURFACE
Authors: SUZUKI A GANGULY G MATSUDA A
Citation: A. Suzuki et al., PRECURSOR LIFETIME ESTIMATION BY ULTRAVIOLET-LASER MODULATION OF A HYDROGENATED AMORPHOUS-SILICON GROWTH SURFACE, Applied surface science, 80, 1994, pp. 250-254
LIGHT-INDUCED DEFECT DENSITIES IN HYDROGENATED AND DEUTERATED AMORPHOUS-SILICON DEPOSITED AT DIFFERENT SUBSTRATE TEMPERATURES
Authors: GANGULY G MATSUDA A
Citation: G. Ganguly et A. Matsuda, LIGHT-INDUCED DEFECT DENSITIES IN HYDROGENATED AND DEUTERATED AMORPHOUS-SILICON DEPOSITED AT DIFFERENT SUBSTRATE TEMPERATURES, Physical review. B, Condensed matter, 49(16), 1994, pp. 10986-10990
THE ROBUST SEQUENTIAL ESTIMATOR - A GENERAL-APPROACH AND ITS APPLICATION TO SURFACE ORGANIZATION IN RANGE DATA
Authors: BOYER KL MIRZA MJ GANGULY G
Citation: Kl. Boyer et al., THE ROBUST SEQUENTIAL ESTIMATOR - A GENERAL-APPROACH AND ITS APPLICATION TO SURFACE ORGANIZATION IN RANGE DATA, IEEE transactions on pattern analysis and machine intelligence, 16(10), 1994, pp. 987-1001
REDUCTION OF THE DEFECT DENSITY IN HYDROGENATED AMORPHOUS-SILICON BY THERMALLY ENERGIZED GROWTH PRECURSORS
Authors: GANGULY G NISHIO H MATSUDA A
Citation: G. Ganguly et al., REDUCTION OF THE DEFECT DENSITY IN HYDROGENATED AMORPHOUS-SILICON BY THERMALLY ENERGIZED GROWTH PRECURSORS, Applied physics letters, 64(26), 1994, pp. 3581-3583
IMPORTANCE OF SURFACE PROCESSES IN DEFECT FORMATION IN A-SI-H
Authors: GANGULY G MATSUDA A
Citation: G. Ganguly et A. Matsuda, IMPORTANCE OF SURFACE PROCESSES IN DEFECT FORMATION IN A-SI-H, Journal of non-crystalline solids, 166, 1993, pp. 31-36
DEFECT DETERMINATION KINETICS DURING THE GROWTH OF A-SI-H
Authors: KAMEI T GANGULY G HATA N MATSUDA A
Citation: T. Kamei et al., DEFECT DETERMINATION KINETICS DURING THE GROWTH OF A-SI-H, Journal of non-crystalline solids, 166, 1993, pp. 43-46
ULTRAVIOLET PHOTON-INDUCED STIMULATION OF SURFACE-REACTION DURING GROWTH OF HYDROGENATED AMORPHOUS-SILICON - ESTIMATION OF THE LIFETIME OF FILM PRECURSORS
Authors: SUZUKI A GANGULY G MATSUDA A
Citation: A. Suzuki et al., ULTRAVIOLET PHOTON-INDUCED STIMULATION OF SURFACE-REACTION DURING GROWTH OF HYDROGENATED AMORPHOUS-SILICON - ESTIMATION OF THE LIFETIME OF FILM PRECURSORS, Applied physics letters, 63(20), 1993, pp. 2806-2808
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