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Results: 1-10 |
Results: 10
GEOMETRIC INTERPRETATION OF THE DECOMPOSITION OF SUPERSATURATES SOLID-SOLUTIONS
Authors: GARNYK VS
Citation: Vs. Garnyk, GEOMETRIC INTERPRETATION OF THE DECOMPOSITION OF SUPERSATURATES SOLID-SOLUTIONS, Russian metallurgy. Metally, (1), 1997, pp. 110-117
EFFECT OF IRRADIATION ON THE ELECTRICAL-PROPERTIES OF SN-DOPED GE SINGLE-CRYSTALS
Authors: MILEVSKII LS GARNYK VS SIDOROV YA
Citation: Ls. Milevskii et al., EFFECT OF IRRADIATION ON THE ELECTRICAL-PROPERTIES OF SN-DOPED GE SINGLE-CRYSTALS, Inorganic materials, 33(4), 1997, pp. 323-326
EFFECT OF THE ELASTIC-DEFORMATION OF SILICON SINGLE-CRYSTALS ON THEIRELECTRICAL-PROPERTIES
Authors: GARNYK VS BELOKUROVA IN
Citation: Vs. Garnyk et In. Belokurova, EFFECT OF THE ELASTIC-DEFORMATION OF SILICON SINGLE-CRYSTALS ON THEIRELECTRICAL-PROPERTIES, Semiconductors, 30(5), 1996, pp. 507-508
THERMAL RELAXATION IN IRRADIATED TI-DOPED, ZR-DOPED, AND HF-DOPED SILICON-CRYSTALS
Authors: GARNYK VS BELOKUROVA IN
Citation: Vs. Garnyk et In. Belokurova, THERMAL RELAXATION IN IRRADIATED TI-DOPED, ZR-DOPED, AND HF-DOPED SILICON-CRYSTALS, Inorganic materials, 31(9), 1995, pp. 1049-1052
EFFECT OF HEAT-TREATMENT ON HALL-MOBILITY AND CONCENTRATION OF CHARGE-CARRIERS IN SINGLE-CRYSTALS OF SILICON DOPED WITH TITANIUM, ZIRCONIUM, OR HAFNIUM
Authors: GARNYK VS
Citation: Vs. Garnyk, EFFECT OF HEAT-TREATMENT ON HALL-MOBILITY AND CONCENTRATION OF CHARGE-CARRIERS IN SINGLE-CRYSTALS OF SILICON DOPED WITH TITANIUM, ZIRCONIUM, OR HAFNIUM, Inorganic materials, 31(9), 1995, pp. 1053-1055
EFFECT OF THE NATURE OF THE SCATTERING ON THE LIFETIME OF MINORITY-CARRIERS IN HAFNIUM-DOPED SILICON
Authors: GARNYK VS
Citation: Vs. Garnyk, EFFECT OF THE NATURE OF THE SCATTERING ON THE LIFETIME OF MINORITY-CARRIERS IN HAFNIUM-DOPED SILICON, Semiconductors, 28(2), 1994, pp. 138-139
IMPROVING THE RADIATION-RESISTANCE OF SEMICONDUCTOR-DETECTORS OF RADIOACTIVE RADIATION
Authors: GARNYK VS
Citation: Vs. Garnyk, IMPROVING THE RADIATION-RESISTANCE OF SEMICONDUCTOR-DETECTORS OF RADIOACTIVE RADIATION, Measurement techniques, 37(1), 1994, pp. 107-109
RELIABILITY OF RESULTS OBTAINED IN MEASURING THE MINORITY CHARGE-CARRIER LIFETIME IN SEMICONDUCTORS BY THE PEM EFFECT METHOD
Authors: VIRYASOVA TB GARNYK VS NAUMOV AV ISAIKIN VD RAUKHMAN MR KISELEVA NN
Citation: Tb. Viryasova et al., RELIABILITY OF RESULTS OBTAINED IN MEASURING THE MINORITY CHARGE-CARRIER LIFETIME IN SEMICONDUCTORS BY THE PEM EFFECT METHOD, Measurement techniques, 36(1), 1993, pp. 69-71
EFFECT OF RADIATION ON THE LIFETIME OF MINORITY CHARGE-CARRIERS AND ELECTRIC-RESISTANCE OF TITANIUM-DOPED, ZIRCONIUM-DOPED, AND HAFNIUM-DOPED SILICON SINGLE-CRYSTALS
Authors: BELOKUROVA IN GARNYK VS
Citation: In. Belokurova et Vs. Garnyk, EFFECT OF RADIATION ON THE LIFETIME OF MINORITY CHARGE-CARRIERS AND ELECTRIC-RESISTANCE OF TITANIUM-DOPED, ZIRCONIUM-DOPED, AND HAFNIUM-DOPED SILICON SINGLE-CRYSTALS, Inorganic materials, 29(12), 1993, pp. 1522-1523
EFFECT OF HAFNIUM DOPING AND HEAT-TREATMENT ON THE ELECTRICAL-PROPERTIES OF SILICON SINGLE-CRYSTALS
Authors: BELOKUROVA IN GARNYK VS
Citation: In. Belokurova et Vs. Garnyk, EFFECT OF HAFNIUM DOPING AND HEAT-TREATMENT ON THE ELECTRICAL-PROPERTIES OF SILICON SINGLE-CRYSTALS, Inorganic materials, 29(1), 1993, pp. 130-131
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