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Results:
1-7
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Results: 7
Authors:
GASANZADE SG
SHEPELSKII GA
Citation: Sg. Gasanzade et Ga. Shepelskii, ON TRAPPING OF MINORITY CURRENT CARRIERS IN N-TYPE CDXHG1-XTE AT LOW-TEMPERATURES, Semiconductors, 32(4), 1998, pp. 389-391
Authors:
GASANZADE SG
SALKOV EA
SHEPELSKII GA
Citation: Sg. Gasanzade et al., PHOTOELECTRIC AND PHOTOMAGNETIC PROPERTIES OF THE GAPLESS SEMICONDUCTOR CDXHG1-XTE IN THE INFRARED AND MILLIMETER SPECTRAL REGIONS WHEN AN ENERGY-GAP IS OPENED, Semiconductors, 31(1), 1997, pp. 29-35
Authors:
GASANZADE SG
KALENIK VI
SHEPELSKII GA
Citation: Sg. Gasanzade et al., LOW-TEMPERATURE PHOTOELECTRIC CHARACTERISTICS OF MNXHG1-XTE, Semiconductors, 30(1), 1996, pp. 34-38
Authors:
VASKO FT
GASANZADE SG
STRIKHA MV
SHEPELSKII GA
Citation: Ft. Vasko et al., POLARIZATION-DEPENDENT PHOTOCONDUCTIVITY IN UNIAXIALLY DEFORMED NARROW-GAP SEMICONDUCTORS, Semiconductors, 29(4), 1995, pp. 368-370
Authors:
GASANZADE SG
ZHADKO IP
ZINCHENKO EA
SOCHINSKII NV
SHEPELSKII GA
Citation: Sg. Gasanzade et al., PHOTOCONDUCTIVITY AND PHOTOMAGNETIC EFFECT IN EPITAXIAL MNXHG1-XTE LAYERS AT LOW-TEMPERATURES, Semiconductors, 28(5), 1994, pp. 470-473
Authors:
GASANZADE SG
BOGOBOYASHCHII VV
ZHADKO IP
ZINCHENKO EA
SHEPELSKII GA
Citation: Sg. Gasanzade et al., CHARACTERISTIC FEATURES OF THE TEMPERATURE AND SPECTRAL DEPENDENCES OF THE PHOTOCONDUCTIVITY AND PHOTOMAGNETIC EFFECT IN P-TYPE CDXHG1-XTE AT LOW-TEMPERATURES, Semiconductors, 27(9), 1993, pp. 833-837
Authors:
GASANZADE SG
SHEPELSKII GA
Citation: Sg. Gasanzade et Ga. Shepelskii, RECOMBINATION MECHANISMS AND TRANSPORT PHENOMENA IN UNIAXIALLY COMPRESSED CDXHG1-XTE, Semiconductors, 27(8), 1993, pp. 733-737
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1-7
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