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Results:
1-8
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Results: 8
Authors:
ZYKOV VA
GAVRIKOVA TA
NEMOV SA
RYKOV SA
Citation: Va. Zykov et al., DEFECT FORMATION IN THIN COMPENSATED PBSE - CL FILMS, Russian journal of applied chemistry, 71(4), 1998, pp. 543-549
Authors:
NEMOV SA
GAVRIKOVA TA
ZYKOV VA
OSIPOV PA
PROSHIN VI
Citation: Sa. Nemov et al., FEATURES OF THE ELECTRICAL COMPENSATION OF BISMUTH IMPURITIES IN PBSE, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 689-691
Authors:
ALEKSANDROV SE
ZYKOV VA
GAVRIKOVA TA
KRASOVITSKII DM
Citation: Se. Aleksandrov et al., ELECTRIC AND PHOTOELECTRIC PROPERTIES OF N-GAXIN1-XN P-SI ANISOTYPIC HETEROJUNCTIONS/, Semiconductors, 32(4), 1998, pp. 412-416
Authors:
GAVRIKOVA TA
ZYKOV VA
Citation: Ta. Gavrikova et Va. Zykov, ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF AN ANISOTYPIC PB0.93SN0.07SE PBSE HETEROJUNCTION/, Semiconductors, 31(11), 1997, pp. 1157-1160
Authors:
ZYKOV VA
GAVRIKOVA TA
NEMOV SA
Citation: Va. Zykov et al., CHARACTERISTICS OF SELF-COMPENSATION IN PBSE-CL-SE-EX FILMS, Semiconductors, 30(4), 1996, pp. 386-388
Authors:
RYKOV SA
ZYKOV VA
GAVRIKOVA TA
Citation: Sa. Rykov et al., LOW-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY AND SPECTROSCOPY OF THEPBSE-CL THIN-FILMS, Czechoslovak journal of Physics, 46, 1996, pp. 2487-2488
Authors:
ZYKOV VA
GAVRIKOVA TA
NEMOV SA
Citation: Va. Zykov et al., AMPHOTERIC BEHAVIOR OF BISMUTH IN LEAD SELENIDE FILMS, Semiconductors, 29(2), 1995, pp. 154-157
Authors:
GAVRIKOVA TA
ZYKOV VA
NEMOV SA
Citation: Ta. Gavrikova et al., CHARACTERISTIC FEATURES OF SELF-COMPENSATION IN PBSE-TL-PBEX FILMS, Semiconductors, 27(2), 1993, pp. 112-114
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