Authors:
EHLERT A
KERSTAN M
LUNDT H
HUBER A
HELMREICH D
GEILER HD
KARGE H
WAGNER M
Citation: A. Ehlert et al., SELECTED APPLICATIONS OF PHOTOTHERMAL AND PHOTOLUMINESCENCE HETERODYNE TECHNIQUES FOR PROCESS-CONTROL IN SILICON-WAFER MANUFACTURING, Optical engineering, 36(2), 1997, pp. 446-458
Authors:
GEILER HD
KARGE H
WAGNER M
EHLERT A
KERSTAN M
HELMREICH D
Citation: Hd. Geiler et al., ANALYSIS OF SUBSURFACE DAMAGE IN SILICON BY A COMBINED PHOTOTHERMAL AND PHOTOLUMINESCENCE HETERODYNE MEASUREMENT, Journal of applied physics, 81(11), 1997, pp. 7548-7551
Authors:
GEILER HD
KARGE H
WAGNER M
EHLERT A
KERSTAN M
HELMREICH D
Citation: Hd. Geiler et al., ANALYSIS OF SUBSURFACE DAMAGE IN SILICON BY PHOTOLUMINESCENCE AND PHOTOTHERMAL HETERODYNE METHODS, Progress in Natural Science, 6, 1996, pp. 498-502
Authors:
LUGSCHEIDER E
GEILER HD
LAKE M
ZIMMERMANN H
Citation: E. Lugscheider et al., INVESTIGATION OF THERMOPHYSICAL PROPERTIES OF AIP COATED CUTTING TOOLS FOR DRY MACHINING, Surface & coatings technology, 86-7(1-3), 1996, pp. 803-808
Citation: F. Buchmann et Hd. Geiler, SURFACE CHARACTERIZATION OF SEMICONDUCTORS WITH PLASMA AND THERMAL WAVES ANALYSIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 113-117
Citation: S. Kapplinger et al., MEASUREMENT OF SURFACE RECOMBINATION OF EXCESS CARRIERS BY USE OF THEDOUBLE-MODULATION TECHNIQUE, Journal de physique. IV, 4(C7), 1994, pp. 145-149
Citation: H. Schlemm et al., IN-SITU INVESTIGATION OF ION-IMPLANTATION PROCESSES BY THERMAL-WAVE ANALYSIS, Journal de physique. IV, 4(C7), 1994, pp. 167-170
Citation: D. Wolff et al., A RIGOROUS DESCRIPTION OF ELECTRODYNAMIC AND PHOTOTHERMAL RESPONSE BYTHE MATRIX FORMALISM IN LAYERED SYSTEMS, Journal de physique. IV, 4(C7), 1994, pp. 179-182
Citation: Hd. Geiler et al., NONDESTRUCTIVE EVALUATION OF ION IMPLANTATION-INDUCED MICROHARDNESS BY PHOTOTHERMAL SPECTROSCOPY, Surface & coatings technology, 66(1-3), 1994, pp. 265-270