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Results: 1-25 | 26-27
Results: 1-25/27
POTENTIAL USE OF THE TENDENCY OF III-V ALLOYS TO SEPARATE FOR FABRICATION OF LOW DIMENSIONALITY STRUCTURES
Authors: GEORGAKILAS A MICHELAKIS K HALKIAS G BECOURT N PEIRO F CORNET A
Citation: A. Georgakilas et al., POTENTIAL USE OF THE TENDENCY OF III-V ALLOYS TO SEPARATE FOR FABRICATION OF LOW DIMENSIONALITY STRUCTURES, Microelectronic engineering, 42, 1998, pp. 583-586
THE PROLATE SOLAR CHROMOSPHERE
Authors: AUCHERE F BOULADE S KOUTCHMY S SMARTT RN DELABOUDINIERE JP GEORGAKILAS A GURMAN JB ARTZNER GE
Citation: F. Auchere et al., THE PROLATE SOLAR CHROMOSPHERE, Astronomy and astrophysics (Berlin), 336(3), 1998, pp. 57-60
SILICON SUBSTRATE OPTIMIZATION FOR MICROWAVE APPLICATIONS OF GAAS SI MESFETS/
Authors: PAPAVASSILIOU C GEORGAKILAS A APERATHITIS E KRASNY H LOCHTERMANN E PANAYOTATOS P
Citation: C. Papavassiliou et al., SILICON SUBSTRATE OPTIMIZATION FOR MICROWAVE APPLICATIONS OF GAAS SI MESFETS/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 351-354
INVESTIGATION OF THE GAAS SI HETEROJUNCTION BAND LINEUP WITH CAPACITANCE AND CURRENT VERSUS VOLTAGE MEASUREMENTS/
Authors: GEORGAKILAS A APERATHITIS E FOUKARAKI V KAYAMBAKI M PANAYOTATOS P
Citation: A. Georgakilas et al., INVESTIGATION OF THE GAAS SI HETEROJUNCTION BAND LINEUP WITH CAPACITANCE AND CURRENT VERSUS VOLTAGE MEASUREMENTS/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 383-386
SELF-ORGANIZATION OF QUANTUM WIRE-LIKE MORPHOLOGY ON INXGA1-XAS SINGLE QUANTUM-WELLS GROWN ON (100)INP VICINAL SURFACES DEPENDING ON THE SUBSTRATE MISORIENTATION, BUFFER MISMATCH AND GROWTH TEMPERATURE
Authors: PEIRO F CORNET A MORANTE JR HALKIAS G GEORGAKILAS A
Citation: F. Peiro et al., SELF-ORGANIZATION OF QUANTUM WIRE-LIKE MORPHOLOGY ON INXGA1-XAS SINGLE QUANTUM-WELLS GROWN ON (100)INP VICINAL SURFACES DEPENDING ON THE SUBSTRATE MISORIENTATION, BUFFER MISMATCH AND GROWTH TEMPERATURE, Microelectronics, 28(8-10), 1997, pp. 865-873
STRUCTURAL CHARACTERIZATION OF INGAAS INALAS QUANTUM-WELLS GROWN ON (111)-INP SUBSTRATES/
Authors: VILA A CORNET A MORANTE JR GEORGAKILAS A HALKIAS G BECOURT N
Citation: A. Vila et al., STRUCTURAL CHARACTERIZATION OF INGAAS INALAS QUANTUM-WELLS GROWN ON (111)-INP SUBSTRATES/, Microelectronics, 28(8-10), 1997, pp. 999-1003
SURFACE STEP BUNCHING AND CRYSTAL DEFECTS IN INALAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON (111)B INP SUBSTRATES
Authors: BECOURT N PEIRO F CORNET A MORANTE JR GOROSTIZA P HALKIAS G MICHELAKIS K GEORGAKILAS A
Citation: N. Becourt et al., SURFACE STEP BUNCHING AND CRYSTAL DEFECTS IN INALAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON (111)B INP SUBSTRATES, Applied physics letters, 71(20), 1997, pp. 2961-2963
EFFECTS OF SI(100) TILTING ANGLE AND PRELAYER CONDITIONS ON GAAS SI HETEROSTRUCTURES/
Authors: GEORGAKILAS A PAPAVASSILIOU C CONSTANTINIDIS G TSAGARAKI K KRASNY H LOCHTERMANN E PANAYOTATOS P
Citation: A. Georgakilas et al., EFFECTS OF SI(100) TILTING ANGLE AND PRELAYER CONDITIONS ON GAAS SI HETEROSTRUCTURES/, Applied surface science, 102, 1996, pp. 67-72
HETEROJUNCTION DIODES NGAAS PSI WITH IDEAL CHARACTERISTICS/
Authors: APERATHITIS E KAYIAMBAKI M FOUKARAKI V HALKIAS G PANAYOTATOS P GEORGAKILAS A
Citation: E. Aperathitis et al., HETEROJUNCTION DIODES NGAAS PSI WITH IDEAL CHARACTERISTICS/, Applied surface science, 102, 1996, pp. 208-211
ELECTRON-DENSITY EFFECTS IN THE MODULATION SPECTROSCOPY OF STRAINED AND LATTICE-MATCHED INGAAS INALAS/INP HIGH-ELECTRON-MOBILITY TRANSISTORSTRUCTURES/
Authors: DIMOULAS A DAVIDOW J GIAPIS KP GEORGAKILAS A HALKIAS G KORNELIOS N
Citation: A. Dimoulas et al., ELECTRON-DENSITY EFFECTS IN THE MODULATION SPECTROSCOPY OF STRAINED AND LATTICE-MATCHED INGAAS INALAS/INP HIGH-ELECTRON-MOBILITY TRANSISTORSTRUCTURES/, Journal of applied physics, 80(6), 1996, pp. 3484-3487
COMPOSITION INHOMOGENEITIES IN THE BUFFER LAYERS OF IN0.52AL0.48AS INXGA1-XAS/INP MULTIQUANTUM-WELL STRUCTURES DRIVEN BY IN SEGREGATION/
Authors: PEIRO F CORNET A MORANTE JR GEORGAKILAS A
Citation: F. Peiro et al., COMPOSITION INHOMOGENEITIES IN THE BUFFER LAYERS OF IN0.52AL0.48AS INXGA1-XAS/INP MULTIQUANTUM-WELL STRUCTURES DRIVEN BY IN SEGREGATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 1006-1009
INVESTIGATION OF SI-SUBSTRATE PREPARATION FOR GAAS-ON-SI MBE GROWTH
Authors: KAYAMBAKI M CALLEC R CONSTANTINIDIS G PAPAVASSILIOU C LOCHTERMANN E KRASNY H PAPADAKIS N PANAYOTATOS P GEORGAKILAS A
Citation: M. Kayambaki et al., INVESTIGATION OF SI-SUBSTRATE PREPARATION FOR GAAS-ON-SI MBE GROWTH, Journal of crystal growth, 157(1-4), 1995, pp. 300-303
QUANTUM WIRE-LIKE INDUCED MORPHOLOGY IN INGAAS WELLS GROWN ON INYAL1-YAS TENSILE BUFFER LAYERS OVER (100)INP VICINAL SURFACES
Authors: PEIRO F CORNET A MORANTE JR GEORGAKILAS A WOOD C CHRISTOU A
Citation: F. Peiro et al., QUANTUM WIRE-LIKE INDUCED MORPHOLOGY IN INGAAS WELLS GROWN ON INYAL1-YAS TENSILE BUFFER LAYERS OVER (100)INP VICINAL SURFACES, Applied physics letters, 66(18), 1995, pp. 2391-2393
CONTRAST MODULATIONS IN INALAS INP
Authors: PEIRO F CORNET A MORANTE JR GEORGAKILAS A CHRISTOU A
Citation: F. Peiro et al., CONTRAST MODULATIONS IN INALAS INP, Journal of electronic materials, 23(9), 1994, pp. 969-974
STUDY OF SCHOTTKY CONTACT FORMATION ON CH4 H2 REACTIVE-ION-ETCHED INALAS/
Authors: KUZMIK J GEORGAKILAS A
Citation: J. Kuzmik et A. Georgakilas, STUDY OF SCHOTTKY CONTACT FORMATION ON CH4 H2 REACTIVE-ION-ETCHED INALAS/, Semiconductor science and technology, 9(6), 1994, pp. 1226-1229
TEM ANALYSIS OF INGAAS INALAS EPITAXIAL LAYERS GROWN OVER INP PATTERNED SUBSTRATES/
Authors: PEIRO F CORNET A MORANTE JR ZEKENTES K GEORGAKILAS A
Citation: F. Peiro et al., TEM ANALYSIS OF INGAAS INALAS EPITAXIAL LAYERS GROWN OVER INP PATTERNED SUBSTRATES/, Materials letters, 21(5-6), 1994, pp. 371-375
ELECTRICAL-TRANSPORT QUANTUM EFFECTS IN THE IN0.53GA0.47AS IN0.52AL0.48AS HETEROSTRUCTURE ON SILICON/
Authors: GEORGAKILAS A CHRISTOU A ZEKENTES K MERCY JM KONCZEWICZ LK VILA A CORNET A
Citation: A. Georgakilas et al., ELECTRICAL-TRANSPORT QUANTUM EFFECTS IN THE IN0.53GA0.47AS IN0.52AL0.48AS HETEROSTRUCTURE ON SILICON/, Journal of applied physics, 76(3), 1994, pp. 1948-1952
EFFECTS OF INGAAS GAAS STRAINED-LAYER SUPERLATTICES IN OPTIMIZED MOLECULAR-BEAM-EPITAXY GAAS AN SI WITH SI BUFFER LAYERS/
Authors: GEORGAKILAS A CHRISTOU A
Citation: A. Georgakilas et A. Christou, EFFECTS OF INGAAS GAAS STRAINED-LAYER SUPERLATTICES IN OPTIMIZED MOLECULAR-BEAM-EPITAXY GAAS AN SI WITH SI BUFFER LAYERS/, Journal of applied physics, 76(11), 1994, pp. 7332-7338
PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY OF AL0.48IN0.52AS SEMIINSULATING LAYERS GROWN ON INP BY MOLECULAR-BEAM EPITAXY
Authors: KALBOUSSI A MARRAKCHI G TABATA A GUILLOT G HALKIAS G ZEKENTES K GEORGAKILAS A CRISTOU A
Citation: A. Kalboussi et al., PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY OF AL0.48IN0.52AS SEMIINSULATING LAYERS GROWN ON INP BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 93-96
ROOM-TEMPERATURE PHOTOREFLECTANCE AS A POWERFUL TOOL TO CHARACTERIZE THE CRYSTALLINE QUALITY OF INALAS LAYERS GROWN ON INP SUBSTRATES
Authors: MONEGER S TABATA A BRU C GUILLOT G GEORGAKILAS A ZEKENTES K HALKIAS G
Citation: S. Moneger et al., ROOM-TEMPERATURE PHOTOREFLECTANCE AS A POWERFUL TOOL TO CHARACTERIZE THE CRYSTALLINE QUALITY OF INALAS LAYERS GROWN ON INP SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 177-180
MATERIALS PROBLEMS FOR THE DEVELOPMENT OF INGAAS INALAS HEMT TECHNOLOGY
Authors: ZEKENTES K HALKIAS G DIMOULAS A TABATA A BENYATTOU T GUILLOT G MORANTE JR PEIRO F CORNET A GEORGAKILAS A CHRISTOU A
Citation: K. Zekentes et al., MATERIALS PROBLEMS FOR THE DEVELOPMENT OF INGAAS INALAS HEMT TECHNOLOGY, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 21-25
GENERATION AND ANNIHILATION OF ANTIPHASE DOMAIN BOUNDARIES IN GAAS ONSI GROWN BY MOLECULAR-BEAM EPITAXY
Authors: GEORGAKILAS A STOEMENOS J TSAGARAKI K KOMNINOU P FLEVARIS N PANAYOTATOS P CHRISTOU A
Citation: A. Georgakilas et al., GENERATION AND ANNIHILATION OF ANTIPHASE DOMAIN BOUNDARIES IN GAAS ONSI GROWN BY MOLECULAR-BEAM EPITAXY, Journal of materials research, 8(8), 1993, pp. 1908-1921
PHOTOREFLECTANCE STUDIES OF LATTICE-MATCHED AND STRAINED INGAAS INALAS SINGLE QUANTUM-WELLS
Authors: MONEGER S BALTAGI Y BENYATTOU T TABATA A RAGOT B GUILLOT G GEORGAKILAS A ZEKENTES K HALKIAS G
Citation: S. Moneger et al., PHOTOREFLECTANCE STUDIES OF LATTICE-MATCHED AND STRAINED INGAAS INALAS SINGLE QUANTUM-WELLS, Journal of applied physics, 74(2), 1993, pp. 1437-1439
FREQUENCY-RESOLVED ADMITTANCE MEASUREMENTS ON INAIAS INGAAS/INAIAS SINGLE-QUANTUM WELLS TO DETERMINE THE CONDUCTION-BAND OFFSET AND THE CAPTURE COEFFICIENT/
Authors: LOPEZVILLEGAS JM ROURA P BOSCH J MORANTE JR GEORGAKILAS A ZEKENTES K
Citation: Jm. Lopezvillegas et al., FREQUENCY-RESOLVED ADMITTANCE MEASUREMENTS ON INAIAS INGAAS/INAIAS SINGLE-QUANTUM WELLS TO DETERMINE THE CONDUCTION-BAND OFFSET AND THE CAPTURE COEFFICIENT/, Journal of the Electrochemical Society, 140(5), 1993, pp. 1492-1495
A COMPREHENSIVE OPTIMIZATION OF INAIAS MOLECULAR-BEAM EPITAXY FOR INGAAS INAIAS HEMT TECHNOLOGY/
Authors: GEORGAKILAS A HALKIAS G CHRISTOU A KORNILIOS N PAPAVASSILIOU C ZEKENTES K KONSTANTINIDIS G PEIRO F CORNET A ABABOU S TABATA A GUILLOT G
Citation: A. Georgakilas et al., A COMPREHENSIVE OPTIMIZATION OF INAIAS MOLECULAR-BEAM EPITAXY FOR INGAAS INAIAS HEMT TECHNOLOGY/, Journal of the Electrochemical Society, 140(5), 1993, pp. 1503-1509
Risultati: 1-25 | 26-27