Authors: GESHEVA KA GOGOVA DS BESHKOV GD POPOV V

Citation: Ka. Gesheva et al., PREPARATION OF WSI2 BY RAPID THERMAL ANNEALING OF CVD THIN-FILMS OF TUNGSTEN, Vacuum, 51(2), 1998, pp. 181-184

Authors: GOGOVA D STOYANOV G GESHEVA KA

Citation: D. Gogova et al., OPTIMIZATION OF THE GROWTH-RATE OF ELECTROCHROMIC WO3 COATINGS, IN-SITU GROWN BY CHEMICAL-VAPOR-DEPOSITION AT ATMOSPHERIC-PRESSURE, Renewable energy, 8(1-4), 1996, pp. 546-550

Authors: HARIZANOV OA GESHEVA KA STEFCHEV PL

Citation: Oa. Harizanov et al., SOL-GEL AND CVD-METAL OXIDE COATINGS FOR SOLAR-ENERGY UTILIZATION, Ceramics international, 22(2), 1996, pp. 91-94

Authors: GESHEVA KA VLAKHOV ES STOYANOV GI BESHKOV GD MARINOV M

Citation: Ka. Gesheva et al., DEPOSITION AND CHARACTERIZATION OF CVD-TUNGSTEN AND TUNGSTEN CARBONITRIDES ON (100)SI, Ceramics international, 22(1), 1996, pp. 87-89

Authors: GESHEVA KA GOGOVA DS

Citation: Ka. Gesheva et Ds. Gogova, CVD-TECHNOLOGY OF TRANSITION-METAL OXIDES AND THEIR IMPACT ON SOLAR-ENERGY UTILIZATION, Journal de physique. IV, 3(C3), 1993, pp. 475-483

Authors: GESHEVA KA KRISOV TA SIMKOV UI BESHKOV GD

Citation: Ka. Gesheva et al., DEPOSITION AND STUDY OF CVD - TUNGSTEN AND MOLYBDENUM THIN-FILMS AND THEIR IMPACT ON MICROELECTRONICS TECHNOLOGY, Applied surface science, 73, 1993, pp. 86-89