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Results: 1-25 | 26-50
Results: 1-25/50
LOW-FREQUENCY NOISE IN N-GAN
Authors: DYAKONOVA NV LEVINSHTEIN ME CONTRERAS S KNAP W BEAUMONT B GIBART P
Citation: Nv. Dyakonova et al., LOW-FREQUENCY NOISE IN N-GAN, Semiconductors, 32(3), 1998, pp. 257-260
POLARITY RELATED PROBLEMS IN GROWTH OF GAN HOMOEPITAXIAL LAYERS
Authors: LESZCZYNSKI M PRYSTAWKO P SLIWINSKI A SUSKI T LITWINSTASZEWSKA E POROWSKI S PASZKIEWICZ R TLACZALA M BEAUMONT B GIBART P BARSKI A LANGER R KNAP W FRAYSSINET E
Citation: M. Leszczynski et al., POLARITY RELATED PROBLEMS IN GROWTH OF GAN HOMOEPITAXIAL LAYERS, Acta Physica Polonica. A, 94(3), 1998, pp. 427-430
HIGH-PERFORMANCE GAN P-N-JUNCTION PHOTODETECTORS FOR SOLAR ULTRAVIOLET APPLICATIONS
Authors: MONROY E MUNOZ E SANCHEZ FJ CALLE F CALLEJA E BEAUMONT B GIBART P MUNOZ JA CUSSO F
Citation: E. Monroy et al., HIGH-PERFORMANCE GAN P-N-JUNCTION PHOTODETECTORS FOR SOLAR ULTRAVIOLET APPLICATIONS, Semiconductor science and technology, 13(9), 1998, pp. 1042-1046
COUPLED LONGITUDINAL OPTIC PHONON-PLASMON MODES IN P-TYPE GAN
Authors: DEMANGEOT F FRANDON J RENUCCI MA GRANDJEAN N BEAUMONT B MASSIES J GIBART P
Citation: F. Demangeot et al., COUPLED LONGITUDINAL OPTIC PHONON-PLASMON MODES IN P-TYPE GAN, Solid state communications, 106(8), 1998, pp. 491-494
LATERAL OVERGROWTH OF HIGH-QUALITY GAN LAYERS ON GAN AL2O3 PATTERNED SUBSTRATES BY HALIDE VAPOR-PHASE EPITAXY/
Authors: NATAF G BEAUMONT B BOUILLE A HAFFOUZ S VAILLE M GIBART P
Citation: G. Nataf et al., LATERAL OVERGROWTH OF HIGH-QUALITY GAN LAYERS ON GAN AL2O3 PATTERNED SUBSTRATES BY HALIDE VAPOR-PHASE EPITAXY/, Journal of crystal growth, 192(1-2), 1998, pp. 73-78
OPTICAL MONITORING OF THE GROWTH-RATE REDUCTION BY CCL4 DURING METALORGANIC VAPOR-PHASE EPITAXY DEPOSITION OF CARBON-DOPED GAAS
Authors: REBEY A BEJI L ELJANI B GIBART P
Citation: A. Rebey et al., OPTICAL MONITORING OF THE GROWTH-RATE REDUCTION BY CCL4 DURING METALORGANIC VAPOR-PHASE EPITAXY DEPOSITION OF CARBON-DOPED GAAS, Journal of crystal growth, 191(4), 1998, pp. 734-739
LATERAL OVERGROWTH OF GAN ON PATTERNED GAN SAPPHIRE SUBSTRATE VIA SELECTIVE METAL-ORGANIC VAPOR-PHASE EPITAXY - A ROUTE TO PRODUCE SELF SUPPORTED GAN SUBSTRATES/
Authors: BEAUMONT B GIBART P VAILLE M HAFFOUZ S NATAF G BOUILLE A
Citation: B. Beaumont et al., LATERAL OVERGROWTH OF GAN ON PATTERNED GAN SAPPHIRE SUBSTRATE VIA SELECTIVE METAL-ORGANIC VAPOR-PHASE EPITAXY - A ROUTE TO PRODUCE SELF SUPPORTED GAN SUBSTRATES/, Journal of crystal growth, 190, 1998, pp. 97-102
TIME-RESOLVED SPECTROSCOPY OF MID-BAND-GAP EMISSIONS IN SI-DOPED GAN
Authors: SEITZ R GASPAR C MONTEIRO T PEREIRA E LEROUX M BEAUMONT B GIBART P
Citation: R. Seitz et al., TIME-RESOLVED SPECTROSCOPY OF MID-BAND-GAP EMISSIONS IN SI-DOPED GAN, Journal of crystal growth, 190, 1998, pp. 546-550
INVESTIGATIONS OF UNDOPED AND MG-DOPED WURTZITE GAN WITH LUMINESCENCE-DETECTED PARAMAGNETIC-RESONANCE IN THE 4 MM BAND
Authors: KOSCHNICK FK MICHAEL K SPAETH JM BEAUMONT B GIBART P OFF J SOHMER A SCHOLZ F
Citation: Fk. Koschnick et al., INVESTIGATIONS OF UNDOPED AND MG-DOPED WURTZITE GAN WITH LUMINESCENCE-DETECTED PARAMAGNETIC-RESONANCE IN THE 4 MM BAND, Journal of crystal growth, 190, 1998, pp. 561-565
INFLUENCE OF IN-SITU SAPPHIRE SURFACE PREPARATION AND CARRIER GAS ON THE GROWTH MODE OF GAN IN MOVPE
Authors: VENNEGUES P BEAUMONT B HAFFOUZ S VAILLE M GIBART P
Citation: P. Vennegues et al., INFLUENCE OF IN-SITU SAPPHIRE SURFACE PREPARATION AND CARRIER GAS ON THE GROWTH MODE OF GAN IN MOVPE, Journal of crystal growth, 187(2), 1998, pp. 167-177
GAAS EPITAXY BY CHEMICAL-VAPOR TRANSPORT UNDER HIGH, EARTH AND LOW-GRAVITY CONDITIONS
Authors: CHEVRIER V LAUNAY JC LAUGT S VIRAPHONG O GIBART P
Citation: V. Chevrier et al., GAAS EPITAXY BY CHEMICAL-VAPOR TRANSPORT UNDER HIGH, EARTH AND LOW-GRAVITY CONDITIONS, Journal of crystal growth, 183(1-2), 1998, pp. 1-9
HYDROSTATIC-PRESSURE STUDIES OF GAAS TUNNEL-DIODES
Authors: BEJI L ELJANI B GIBART P PORTAL JC BASMAJI P
Citation: L. Beji et al., HYDROSTATIC-PRESSURE STUDIES OF GAAS TUNNEL-DIODES, Journal of applied physics, 83(10), 1998, pp. 5573-5575
OPTICAL GAIN IN GAN EPILAYERS
Authors: HESS S TAYLOR RA RYAN JF BEAUMONT B GIBART P
Citation: S. Hess et al., OPTICAL GAIN IN GAN EPILAYERS, Applied physics letters, 73(2), 1998, pp. 199-201
ALXGA1-XN-SI SCHOTTKY-BARRIER PHOTODIODES WITH FAST-RESPONSE AND HIGHDETECTIVITY
Authors: MONROY E CALLE F MUNOZ E OMNES F GIBART P MUNOZ JA
Citation: E. Monroy et al., ALXGA1-XN-SI SCHOTTKY-BARRIER PHOTODIODES WITH FAST-RESPONSE AND HIGHDETECTIVITY, Applied physics letters, 73(15), 1998, pp. 2146-2148
MAGNESIUM INDUCED CHANGES IN THE SELECTIVE GROWTH OF GAN BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: BEAUMONT B HAFFOUZ S GIBART P
Citation: B. Beaumont et al., MAGNESIUM INDUCED CHANGES IN THE SELECTIVE GROWTH OF GAN BY METALORGANIC VAPOR-PHASE EPITAXY, Applied physics letters, 72(8), 1998, pp. 921-923
DIRECT OBSERVATION OF THE CORE STRUCTURES OF THREADING DISLOCATIONS IN GAN
Authors: XIN Y PENNYCOOK SJ BROWNING ND NELLIST PD SIVANANTHAN S OMNES F BEAUMONT B FAURIE JP GIBART P
Citation: Y. Xin et al., DIRECT OBSERVATION OF THE CORE STRUCTURES OF THREADING DISLOCATIONS IN GAN, Applied physics letters, 72(21), 1998, pp. 2680-2682
GAN-BASED SOLAR-ULTRAVIOLET DETECTION INSTRUMENT
Authors: MONROY E CALLE F ANGULO C VILA P SANZ A GARRIDO JA CALLEJA E MUNOZ E HAFFOUZ S BEAUMONT B OMNES F GIBART P
Citation: E. Monroy et al., GAN-BASED SOLAR-ULTRAVIOLET DETECTION INSTRUMENT, Applied optics, 37(22), 1998, pp. 5058-5062
LUMINESCENCE AND REFLECTIVITY STUDIES OF UNDOPED, N-DOPED AND P-DOPEDGAN ON (0001)SAPPHIRE
Authors: LEROUX M BEAUMONT B GRANDJEAN N LORENZINI P HAFFOUZ S VENNEGUES P MASSIES J GIBART P
Citation: M. Leroux et al., LUMINESCENCE AND REFLECTIVITY STUDIES OF UNDOPED, N-DOPED AND P-DOPEDGAN ON (0001)SAPPHIRE, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 97-104
INFLUENCE OF SI DOPING LEVEL ON THE RAMAN AND IR REFLECTIVITY SPECTRAAND OPTICAL-ABSORPTION SPECTRUM OF GAN
Authors: BENTOUMI G DENEUVILLE A BEAUMONT B GIBART P
Citation: G. Bentoumi et al., INFLUENCE OF SI DOPING LEVEL ON THE RAMAN AND IR REFLECTIVITY SPECTRAAND OPTICAL-ABSORPTION SPECTRUM OF GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 142-147
VIOLET GAN BASED LIGHT-EMITTING-DIODES FABRICATED BY METAL ORGANICS VAPOR-PHASE EPITAXY
Authors: BEAUMONT B HAFFOUZ S GIBART P LEROUX M LORENZINI P CALLEJA E MUNOZ E
Citation: B. Beaumont et al., VIOLET GAN BASED LIGHT-EMITTING-DIODES FABRICATED BY METAL ORGANICS VAPOR-PHASE EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 296-301
OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE ON THE RESIDUAL DONOR IN GAN
Authors: KOSCHNICK FK MICHAEL K SPAETH JM BEAUMONT B GIBART P
Citation: Fk. Koschnick et al., OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE ON THE RESIDUAL DONOR IN GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 181-184
COMPARATIVE OPTICAL CHARACTERIZATION OF GAN GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY, GAS-SOURCE MOLECULAR-BEAM EPITAXY AND HALIDE VAPOR-PHASE EPITAXY
Authors: LEROUX M BEAUMONT B GRANDJEAN N GOLIVET C GIBART P MASSIES J LEYMARIE J VASSON A VASSON AM
Citation: M. Leroux et al., COMPARATIVE OPTICAL CHARACTERIZATION OF GAN GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY, GAS-SOURCE MOLECULAR-BEAM EPITAXY AND HALIDE VAPOR-PHASE EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 237-241
MICROSTRUCTURAL STUDIES OF GAN GROWN ON (0001)-SAPPHIRE BY MOVPE
Authors: VENNEGUES P BEAUMONT B GIBART P
Citation: P. Vennegues et al., MICROSTRUCTURAL STUDIES OF GAN GROWN ON (0001)-SAPPHIRE BY MOVPE, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 274-278
INVESTIGATION OF A NEW PHOTOLUMINESCENCE BAND AT 1.727-EV IN SI-DOPEDGA0.71AL0.29AS
Authors: KHIROUNI K RZIGUA F ALAYA S SELMI A SALLESE JP GIBART P
Citation: K. Khirouni et al., INVESTIGATION OF A NEW PHOTOLUMINESCENCE BAND AT 1.727-EV IN SI-DOPEDGA0.71AL0.29AS, Physica status solidi. b, Basic research, 201(2), 1997, pp. 515-520
HOMOEPITAXIAL LAYERS OF GALLIUM NITRIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: TEISSEYRE H LESZCZYNSKI M SUSKI T GRZEGORY I BOCKOWSKI M JUN J POROWSKI S PAKULA K ROBERT JL BEAUMONT B GIBART P VAILLE M FAURIE JP
Citation: H. Teisseyre et al., HOMOEPITAXIAL LAYERS OF GALLIUM NITRIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Semiconductor science and technology, 12(2), 1997, pp. 240-243
Risultati: 1-25 | 26-50