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Results: 26-50/50
Authors:
CALLEJA E
SANCHEZ FJ
BASAK D
SANCHEZGARCIA MA
MUNOZ E
IZPURA I
CALLE F
TIJERO JMG
SANCHEZROJAS JL
BEAUMONT B
LORENZINI P
GIBART P
Citation: E. Calleja et al., YELLOW LUMINESCENCE AND RELATED DEEP STATES IN UNDOPED GAN, Physical review. B, Condensed matter, 55(7), 1997, pp. 4689-4694
Authors:
VENNEGUES P
BEAUMONT B
VAILLE M
GIBART P
Citation: P. Vennegues et al., MICROSTRUCTURE OF GAN EPITAXIAL-FILMS AT DIFFERENT STAGES OF THE GROWTH-PROCESS ON SAPPHIRE(0001), Journal of crystal growth, 173(3-4), 1997, pp. 249-259
Authors:
BEAUMONT B
VAILLE M
BOUFADEN T
ELJANI B
GIBART P
Citation: B. Beaumont et al., HIGH-QUALITY GAN GROWN BY MOVPE, Journal of crystal growth, 170(1-4), 1997, pp. 316-320
Authors:
OUAJA FR
MEJRI H
SELMI A
GIBART P
Citation: Fr. Ouaja et al., EFFECTS OF THE DX CENTER MULTIPLICITY ON THE TRANSPORT-PROPERTIES OF ALXGA1-XAS-SI, Journal of applied physics, 82(11), 1997, pp. 5509-5512
Authors:
MUNOZ E
MONROY E
GARRIDO JA
IZPURA I
SANCHEZ FJ
SANCHEZGARCIA MA
CALLEJA E
BEAUMONT B
GIBART P
Citation: E. Munoz et al., PHOTOCONDUCTOR GAIN MECHANISMS IN GAN ULTRAVIOLET DETECTORS, Applied physics letters, 71(7), 1997, pp. 870-872
Authors:
VENNEGUES P
BEAUMONT B
VAILLE M
GIBART P
Citation: P. Vennegues et al., STUDY OF OPEN-CORE DISLOCATIONS IN GAN FILMS ON (0001)-SAPPHIRE, Applied physics letters, 70(18), 1997, pp. 2434-2436
Authors:
GIBART P
AUZEL F
GUILLAUME JC
ZAHRAMAN K
Citation: P. Gibart et al., BELOW BAND-GAP IR RESPONSE OF SUBSTRATE-FREE GAAS SOLAR-CELLS USING 2-PHOTON UP-CONVERSION, JPN J A P 1, 35(8), 1996, pp. 4401-4402
Authors:
KOSCHNICK FK
MICHAEL K
SPAETH JM
BEAUMONT B
GIBART P
Citation: Fk. Koschnick et al., OPTICAL-DETECTION OF ELECTRON-NUCLEAR DOUBLE-RESONANCE AN A RESIDUAL DONOR IN WURTZITE GAN, Physical review. B, Condensed matter, 54(16), 1996, pp. 11042-11045
Authors:
LAINE T
MAKINEN J
SAARINEN K
HAUTOJARVI P
CORBEL C
FILLE ML
GIBART P
Citation: T. Laine et al., VACANCYLIKE STRUCTURE OF THE DX CENTER IN TE-DOPED ALXGA1-XAS, Physical review. B, Condensed matter, 53(16), 1996, pp. 11025-11033
Authors:
CALLEJA E
SANCHEZ EJ
MUNOZ E
VIGIL E
OMNES F
GIBART P
MARTIN JM
DIEZ GG
Citation: E. Calleja et al., BEHAVIOR OF SILICON-RELATED, SULFUR-RELATED, AND TELLURIUM-RELATED DXCENTERS IN LIQUID-PHASE-EPITAXY AND VAPOR-PHASE-EPITAXY GAAS1-XPX ALLOYS, Physical review. B, Condensed matter, 53(12), 1996, pp. 7736-7741
Authors:
SANCHEZGARCIA MA
SANCHEZ FJ
CALLE F
MUNOZ E
CALLEJA E
STEVENS KS
KINNIBURGH M
BERESFORD R
BEAUMONT B
GIBART P
Citation: Ma. Sanchezgarcia et al., OPTICAL AND ELECTRICAL CHARACTERIZATION OF GAN LAYERS GROWN ON SILICON AND SAPPHIRE SUBSTRATES, Solid-state electronics, 40(1-8), 1996, pp. 81-84
Authors:
NATAF G
LEROUX M
LAUGT SM
GIBART P
Citation: G. Nataf et al., SELECTIVE GROWTH OF GAAS AND AL0.35GA0.65AS ON GAAS PATTERNED SUBSTRATES BY HCL ASSISTED LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 165(1-2), 1996, pp. 1-7
Authors:
OMNES F
GUILLAUME JC
NATAF G
JAGERWALDAU G
VENNEGUES P
GIBART P
Citation: F. Omnes et al., SUBSTRATE-FREE GAAS PHOTOVOLTAIC CELLS ON PD-COATED SILICON WITH A 20-PERCENT AM1.5 EFFICIENCY, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1806-1811
Authors:
PANT J
LURIO LB
HAYES TM
WILLIAMSON DL
GIBART P
THEIS TN
Citation: J. Pant et al., XAS STUDY OF SN-RELATED DX CENTERS IN (AL,GA)AS, Physica. B, Condensed matter, 209(1-4), 1995, pp. 515-516
Authors:
CALLEJA E
SANCHEZ F
MUNOZ E
GIBART P
POWELL A
ROBERTS JS
Citation: E. Calleja et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY ASSESSMENT OF SILICON CONTAMINATIONIN ALGAAS LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 24(8), 1995, pp. 1017-1022
Authors:
LEROUX M
NEU G
LEYMARIE J
GIBART P
Citation: M. Leroux et al., HIGH-PRESSURE PHOTOLUMINESCENCE OF GAAS CO-DOPED WITH SE AND GE, Semiconductor science and technology, 10(5), 1995, pp. 672-676
Authors:
BEAUMONT B
GIBART P
FAURIE JP
Citation: B. Beaumont et al., NITROGEN PRECURSORS IN METALORGANIC VAPOR-PHASE EPITAXY OF (AL,GA)N, Journal of crystal growth, 156(3), 1995, pp. 140-146
Authors:
THEYS B
MACHAYEKHI B
CHEVALLIER J
SOMOGYI K
ZAHRAMAN K
GIBART P
MILOCHE M
Citation: B. Theys et al., INTERACTIONS BETWEEN HYDROGEN AND GROUP-VI DONORS IN GAAS AND GAALAS, Journal of applied physics, 77(7), 1995, pp. 3186-3193
Authors:
FAURIE JP
TOURNIE E
GIBART P
BEAUMONT B
Citation: Jp. Faurie et al., BLUE LASER - STATE-OF-THE-ART, Annales de physique, 20(5-6), 1995, pp. 743-750
Authors:
ZAHRAMAN K
GUILLAUME JC
NATAF G
BEAUMONT B
LEROUX M
GIBART P
Citation: K. Zahraman et al., HIGH-EFFICIENCY AL0.2GA0.8AS SI STACKED TANDEM SOLAR-CELLS USING EPITAXIAL LIFT-OFF/, JPN J A P 1, 33(10), 1994, pp. 5807-5810
Authors:
PANT J
PANSEWICZ K
ZHANG J
HAYES TM
WILLIAMSON DL
THEIS TN
KUECH TF
GIBART P
Citation: J. Pant et al., EVOLUTION OF SN ENVIRONMENT IN ALGAAS ALLOYS, JPN J A P 1, 32, 1993, pp. 731-733
Authors:
MAKINEN J
LAINE T
SAARINEN K
HAUTOJARVI P
CORBEL C
AIRAKSINEN VM
GIBART P
Citation: J. Makinen et al., OBSERVATION OF A VACANCY AT THE DX CENTER IN SI-DOPED AND SN-DOPED ALGAAS, Physical review letters, 71(19), 1993, pp. 3154-3157
Authors:
WILLKE U
MAUDE DK
SALLESE JM
FILLE ML
ELJANI B
GIBART P
PORTAL JC
Citation: U. Willke et al., OBSERVATION OF THE DX CENTER IN PB-DOPED GAAS, Applied physics letters, 62(26), 1993, pp. 3467-3469
Authors:
WILLIAMSON DL
GIBART P
Citation: Dl. Williamson et P. Gibart, BISTABILITY, LOCAL SYMMETRIES AND CHARGE STATES OF SN-RELATED DONORS IN ALXGA1-XAS AND GAAS UNDER PRESSURE STUDIED BY MOSSBAUER-SPECTROSCOPY, Semiconductor science and technology, 6(10B), 1991, pp. 70-77
Authors:
FOCKELE M
SPAETH JM
OVERHOF H
GIBART P
Citation: M. Fockele et al., ODMR INVESTIGATIONS OF DX CENTERS IN SN-DOPED AND SI-DOPED ALXGA1-XAS, Semiconductor science and technology, 6(10B), 1991, pp. 88-91