AAAAAA

   
Results: 1-9 |
Results: 9
SELECTIVE-AREA EPITAXY OF INGAAS INGAASP QUANTUM-WELLS STUDIED BY MAGNETOTRANSPORT/
Authors: MARTIN RW WONG SL SYMONS DM NICHOLAS RJ GIBBON MA THRUSH EJ STAGG JP
Citation: Rw. Martin et al., SELECTIVE-AREA EPITAXY OF INGAAS INGAASP QUANTUM-WELLS STUDIED BY MAGNETOTRANSPORT/, Semiconductor science and technology, 11(5), 1996, pp. 735-740
CHIRP AND SYSTEM PERFORMANCE OF INTEGRATED LASER MODULATORS
Authors: FELLS JAJ GIBBON MA THOMPSON GHB WHITE JH PENTY RV WRIGHT AP SAUNDERS RA ARMISTEAD CJ KIMBER EM
Citation: Jaj. Fells et al., CHIRP AND SYSTEM PERFORMANCE OF INTEGRATED LASER MODULATORS, IEEE photonics technology letters, 7(11), 1995, pp. 1279-1281
VARIATIONS OF THE HOLE EFFECTIVE MASSES INDUCED BY TENSILE STRAIN IN IN1-XGAXAS(P) INGAASP HETEROSTRUCTURES/
Authors: MARTIN RW WONG SL WARBURTON RJ NICHOLAS RJ SMITH AD GIBBON MA THRUSH EJ
Citation: Rw. Martin et al., VARIATIONS OF THE HOLE EFFECTIVE MASSES INDUCED BY TENSILE STRAIN IN IN1-XGAXAS(P) INGAASP HETEROSTRUCTURES/, Physical review. B, Condensed matter, 50(11), 1994, pp. 7660-7667
CONTROLLING THE CHIRP IN ELECTROABSORPTION MODULATORS UNDER DIGITAL MODULATION
Authors: FELLS JAJ WHITE IH GIBBON MA PENTY RV THOMPSON GHB WRIGHT AP SAUNDERS RA ARMISTEAD CJ
Citation: Jaj. Fells et al., CONTROLLING THE CHIRP IN ELECTROABSORPTION MODULATORS UNDER DIGITAL MODULATION, Electronics Letters, 30(24), 1994, pp. 2066-2067
TRANSMISSION BEYOND THE DISPERSION LIMIT USING A NEGATIVE CHIRP ELECTROABSORPTION MODULATOR
Authors: FELLS JAJ GIBBON MA WHITE IH THOMPSON GHB PENTY RV ARMISTEAD CJ KIMBER EM MOULE DJ THRUSH EJ
Citation: Jaj. Fells et al., TRANSMISSION BEYOND THE DISPERSION LIMIT USING A NEGATIVE CHIRP ELECTROABSORPTION MODULATOR, Electronics Letters, 30(14), 1994, pp. 1168-1169
STRAIN-COMPENSATED MQW ELECTROABSORPTION MODULATOR FOR INCREASED OPTICAL POWER HANDLING
Authors: CZAJKOWSKI IK GIBBON MA THOMPSON GHB GREENE PD SMITH AD SILVER M
Citation: Ik. Czajkowski et al., STRAIN-COMPENSATED MQW ELECTROABSORPTION MODULATOR FOR INCREASED OPTICAL POWER HANDLING, Electronics Letters, 30(11), 1994, pp. 900-901
BAND OFFSETS IN STRAINED INGAASP INGAASP QUANTUM-WELL OPTICAL MODULATOR STRUCTURES/
Authors: MARTIN RW WONG SL NICHOLAS RJ SMITH A GIBBON MA THRUSH EJ STAGG JP
Citation: Rw. Martin et al., BAND OFFSETS IN STRAINED INGAASP INGAASP QUANTUM-WELL OPTICAL MODULATOR STRUCTURES/, Journal de physique. IV, 3(C5), 1993, pp. 327-330
SELECTIVE AND NONPLANAR EPITAXY OF INP GAINAS(P) BY MOCVD/
Authors: THRUSH EJ STAGG JP GIBBON MA MALLARD RE HAMILTON B JOWETT JM ALLEN EM
Citation: Ej. Thrush et al., SELECTIVE AND NONPLANAR EPITAXY OF INP GAINAS(P) BY MOCVD/, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 130-146
CHARACTERIZATION OF THE CRYSTALLOGRAPHIC DEFECT STRUCTURE IN SELECTED-AREA EPITAXIAL-GROWTH OF GAINAS ON INP BY METALLOORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: MALLARD RE THRUSH EJ GIBBON MA BOOKER GR
Citation: Re. Mallard et al., CHARACTERIZATION OF THE CRYSTALLOGRAPHIC DEFECT STRUCTURE IN SELECTED-AREA EPITAXIAL-GROWTH OF GAINAS ON INP BY METALLOORGANIC CHEMICAL-VAPOR-DEPOSITION, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 48-52
Risultati: 1-9 |