Authors: GILES LF KUNII Y

Citation: Lf. Giles et Y. Kunii, CHARACTERIZATION OF CRYSTALLOGRAPHIC DEFECTS IN THERMALLY OXIDIZED SIMOX MATERIALS, Materials science & engineering. B, Solid-state materials for advanced technology, 41(1), 1996, pp. 182-185

Authors: QIAN YH EVANS JH GILES LF NEJIM A HEMMENT PLF

Citation: Yh. Qian et al., ELECTRICAL AND OPTICAL CHARACTERIZATION OF EXTENDED DEFECTS IN SIMOX STRUCTURES, Semiconductor science and technology, 11(1), 1996, pp. 27-33

Authors: GILES LF MARSH CD NEJIM A HEMMENT PLF BOOKER GR

Citation: Lf. Giles et al., CRYSTALLOGRAPHIC DEFECT STUDIES IN SIMOX MATERIAL THINNED BY SACRIFICIAL OXIDATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 242-247

Authors: NEJIM A MARSH CD GILES LF HEMMENT PLF LI Y CHATER RJ KILNER JA BOOKER GR

Citation: A. Nejim et al., AN INVESTIGATION OF THE ROLE OF THE TIME-AVERAGED ION-BEAM CURRENT-DENSITY UPON THE DEFECT DENSITIES IN THIN-FILM SIMOX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 248-253

Authors: GILES LF NEJIM A HEMMENT PLF

Citation: Lf. Giles et al., A NEW CHEMICAL ETCH FOR DEFECTS STUDIES IN VERY THIN-FILM (LESS-THAN 1000 ANGSTROM) SIMOX MATERIAL, Materials chemistry and physics, 35(2), 1993, pp. 129-133

Authors: GILES LF NEJIM A HEMMENT PLF

Citation: Lf. Giles et al., NEW ETCHANT FOR CRYSTALLOGRAPHIC DEFECT STUDIES IN THIN SOI MATERIALS(LESS-THAN-1000 A-ANGSTROM), Electronics Letters, 29(9), 1993, pp. 788-789