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Results: 1-8 |
Results: 8
OPTICAL DETERMINATION OF GROWTH VARIANTS IN ORDERED GAINP
Authors: ALSINA F GARRIGA M ALONSO MI TORTOSA S PASCUAL J GENG C SCHOLZ F GLEW RW
Citation: F. Alsina et al., OPTICAL DETERMINATION OF GROWTH VARIANTS IN ORDERED GAINP, Solid state communications, 101(10), 1997, pp. 757-760
QUANTITATIVE INVESTIGATION OF INTERDIFFUSION EFFECTS IN BALANCED-STRAIN INGAAS(P) INGAASP HETEROSTRUCTURES - CONSTANT-X VS CONSTANT-Y/
Authors: CAMASSEL J PEYRE H GLEW RW
Citation: J. Camassel et al., QUANTITATIVE INVESTIGATION OF INTERDIFFUSION EFFECTS IN BALANCED-STRAIN INGAAS(P) INGAASP HETEROSTRUCTURES - CONSTANT-X VS CONSTANT-Y/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 353-356
ELIMINATION OF WAVY LAYER GROWTH PHENOMENA IN STRAIN-COMPENSATED GAINASP GAINASP MULTIPLE-QUANTUM-WELL STACKS/
Authors: GLEW RW SCARROTT K BRIGGS ATR SMITH AD WILKINSON VA ZHOU X SILVER M
Citation: Rw. Glew et al., ELIMINATION OF WAVY LAYER GROWTH PHENOMENA IN STRAIN-COMPENSATED GAINASP GAINASP MULTIPLE-QUANTUM-WELL STACKS/, Journal of crystal growth, 145(1-4), 1994, pp. 764-770
NONDESTRUCTIVE APPROACHES TO INTERDIFFUSION PHENOMENA ACROSS GAINAS GAINASP INTERFACES - PHOTOLUMINESCENCE VS RAMAN/
Authors: PEYRE H ALSINA F JUILLAGUET S MASSONE E CAMASSEL J PASCUAL J GLEW RW
Citation: H. Peyre et al., NONDESTRUCTIVE APPROACHES TO INTERDIFFUSION PHENOMENA ACROSS GAINAS GAINASP INTERFACES - PHOTOLUMINESCENCE VS RAMAN/, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 73-76
THERMAL-STABILITY OF INGAAS INGAASP QUANTUM-WELLS/
Authors: PEYRE H ALSINA F CAMASSEL J PASCUAL J GLEW RW
Citation: H. Peyre et al., THERMAL-STABILITY OF INGAAS INGAASP QUANTUM-WELLS/, Journal of applied physics, 73(8), 1993, pp. 3760-3768
DIRECT COMPARISON OF INGAAS INGAALAS AND INGAAS/INGAASP QUANTUM-WELL MODULATORS/
Authors: HAWDON BJ TUTKEN T HANGLEITER A GLEW RW WHITEAWAY JEA
Citation: Bj. Hawdon et al., DIRECT COMPARISON OF INGAAS INGAALAS AND INGAAS/INGAASP QUANTUM-WELL MODULATORS/, Electronics Letters, 29(8), 1993, pp. 705-707
SELECTIVE ETCHING OF INP AND INGAASP OVER ALINAS USING CH4 H2 REACTIVE ION ETCHING/
Authors: ARNOT HEG GLEW RW SCHIAVINI G RIGBY LJ PICCIRILLO A
Citation: Heg. Arnot et al., SELECTIVE ETCHING OF INP AND INGAASP OVER ALINAS USING CH4 H2 REACTIVE ION ETCHING/, Applied physics letters, 62(24), 1993, pp. 3189-3191
HIGH-PURITY INP AND THE ROLE OF HYDROGEN
Authors: GLEW RW ADAMS AR CROOKES CG GREENE PD HOLMES SN KITCHING SA KLIPSTEIN PC LANCEFIELD D STRADLING RA WOOLLEY RA
Citation: Rw. Glew et al., HIGH-PURITY INP AND THE ROLE OF HYDROGEN, Semiconductor science and technology, 6(11), 1991, pp. 1088-1092
Risultati: 1-8 |