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Results: 1-25/37
Authors:
GNASER H
SCHNEIDER HJ
OECHSNER H
Citation: H. Gnaser et al., ABUNDANCE AND DETECTION SENSITIVITY IN SECONDARY-NEUTRAL MASS-SPECTROMETRY WITH ELECTRON-GAS POST-IONIZATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1023-1027
Authors:
GNASER H
Citation: H. Gnaser, SPUTTERING OF CS-CARRYING DIATOMIC CATIONS FROM SURFACES BY KEV CS+ IRRADIATION, International journal of mass spectrometry and ion processes, 174(1-3), 1998, pp. 119-127
Authors:
DRUSEDAU TP
BLASING J
GNASER H
Citation: Tp. Drusedau et al., ALUMINUM MEDIATED LOW-TEMPERATURE GROWTH OF CRYSTALLINE SILICON BY PLASMA-ENHANCED CHEMICAL-VAPOR AND SPUTTER-DEPOSITION, Applied physics letters, 72(12), 1998, pp. 1510-1512
Authors:
GNASER H
Citation: H. Gnaser, FORMATION OF METASTABLE N-2(-) AND CO- ANIONS IN SPUTTERING, Physical review. A, 56(4), 1997, pp. 2518-2521
Authors:
GNASER H
Citation: H. Gnaser, 3D ANALYSIS OF SOLIDS USING SPUTTERED MCS+ IONS, Fresenius' journal of analytical chemistry, 358(1-2), 1997, pp. 171-175
Authors:
GNASER H
Citation: H. Gnaser, APPROACH FOR A 3-DIMENSIONAL ON-CHIP QUANTIFICATION BY SECONDARY-ION MASS-SPECTROMETRY ANALYSIS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 445-451
Authors:
GNASER H
OECHSNER H
SCHNEIDER HJ
Citation: H. Gnaser et al., PARTS-PER-BILLION DETECTION WITH ELECTRON-GAS SECONDARY-NEUTRAL MASS-SPECTROMETRY, Applied surface science, 120(3-4), 1997, pp. 220-224
Authors:
GNASER H
Citation: H. Gnaser, SIMS DETECTION IN THE 10(12) ATOMS CM(-3) RANGE, Surface and interface analysis, 25(10), 1997, pp. 737-740
Authors:
ZHOU D
KRAUSS AR
QIN LC
MCCAULEY TG
GRUEN DM
CORRIGAN TD
CHANG RPH
GNASER H
Citation: D. Zhou et al., SYNTHESIS AND ELECTRON FIELD-EMISSION OF NANOCRYSTALLINE DIAMOND THIN-FILMS GROWN FROM N-2 CH4 MICROWAVE PLASMAS/, Journal of applied physics, 82(9), 1997, pp. 4546-4550
Authors:
GNASER H
Citation: H. Gnaser, PROCESSES IN LOW-ENERGY ION-SURFACE COLLISIONS - PREFERENTIAL SPUTTERING, DEFECT AND ADATOM FORMATION, Applied surface science, 101, 1996, pp. 316-328
Authors:
GNASER H
Citation: H. Gnaser, EXPONENTIAL SCALING OF SPUTTERED NEGATIVE-ION YIELDS WITH TRANSIENT WORK-FUNCTION CHANGES ON CS-BOMBARDED SURFACES(), Physical review. B, Condensed matter, 54(23), 1996, pp. 16456-16459
Authors:
GNASER H
Citation: H. Gnaser, INITIAL-STAGES OF CESIUM INCORPORATION ON KEV-CS-IRRADIATED SURFACES - POSITIVE-ION EMISSION AND WORK-FUNCTION CHANGES(), Physical review. B, Condensed matter, 54(23), 1996, pp. 17141-17146
Authors:
GNASER H
Citation: H. Gnaser, TOWARDS A 3D CHARACTERIZATION OF SOLIDS BY MCS(+) SIMS, Surface and interface analysis, 24(8), 1996, pp. 483-489
Authors:
DOROFEEV A
BACHILO E
BONDARENKO V
GAPONENKO N
KAZUCHITS N
LESHOK A
TROYANOVA G
VOROZOV N
BORISENKO V
GNASER H
BOCK W
BECKER P
OECHSNER H
Citation: A. Dorofeev et al., STRONG 1.54-MU-M LUMINESCENCE FROM ERBIUM-DOPED POROUS SILICON, Thin solid films, 276(1-2), 1996, pp. 171-174
Authors:
GNASER H
KALLMAYER C
OECHSNER H
Citation: H. Gnaser et al., FOCUSED-ION-BEAM IMPLANTATION OF GA IN ELEMENTAL AND COMPOUND SEMICONDUCTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(1), 1995, pp. 19-26
Authors:
HAAG M
GNASER H
OECHSNER H
Citation: M. Haag et al., MCS(-ION AND SPUTTERING YIELDS OF OXYGEN-EXPOSED SEMICONDUCTORS AND GLASSES() SECONDARY), Fresenius' journal of analytical chemistry, 353(5-8), 1995, pp. 565-569
Authors:
BIECK W
GNASER H
OECHSNER H
Citation: W. Bieck et al., ANALYSIS OF SOLIDS WITH A SECONDARY-NEUTRAL MICROPROBE BASED ON ELECTRON-GAS POST-IONIZATION, Fresenius' journal of analytical chemistry, 353(3-4), 1995, pp. 324-328
Authors:
SPITZL R
RAIKO V
HEIDERHOFF R
GNASER H
ENGEMANN J
Citation: R. Spitzl et al., MPCVD DIAMOND DEPOSITION ON BIAS PRETREATED POROUS SILICON, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 563-568
Authors:
BIECK W
GNASER H
OECHSNER H
Citation: W. Bieck et al., ISOTOPIC MASS EFFECTS IN LOW-ENERGY SPUTTERING OF COPPER AND MOLYBDENUM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 101(4), 1995, pp. 335-342
Authors:
GNASER H
Citation: H. Gnaser, ISOTOPE EFFECTS IN THE FORMATION OF MCS(+) MOLECULAR SECONDARY IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 100(2-3), 1995, pp. 347-351
Authors:
GNASER H
HEINZ B
BOCK W
OECHSNER H
Citation: H. Gnaser et al., SURFACE MODIFICATION OF GAAS(110) BY LOW-ENERGY ION IRRADIATION, Physical review. B, Condensed matter, 52(19), 1995, pp. 14086-14092
Authors:
GAPONENKO NV
GNASER H
BECKER P
Citation: Nv. Gaponenko et al., CARBON DEPTH DISTRIBUTION IN SPIN-ON SILICON DIOXIDE FILMS, Thin solid films, 261(1-2), 1995, pp. 186-191
Authors:
GNASER H
Citation: H. Gnaser, CORRELATIONS IN SECONDARY-ION YIELDS FROM CS-IMPLANTED SEMICONDUCTORS, Surface science, 342(1-3), 1995, pp. 319-326
Authors:
DOROFEEV AM
GAPONENKO NV
BONDARENKO VP
BACHILO EE
KAZUCHITS NM
LESHOK AA
TROYANOVA GN
VOROSOV NN
BORISENKO VE
GNASER H
BOCK W
BECKER P
OECHSNER H
Citation: Am. Dorofeev et al., ERBIUM LUMINESCENCE IN POROUS SILICON DOPED FROM SPIN-ON FILMS, Journal of applied physics, 77(6), 1995, pp. 2679-2683
Authors:
BIECK W
GNASER H
OECHSNER H
Citation: W. Bieck et al., ANALYTICAL PERFORMANCE OF A SECONDARY-NEUTRAL MICROPROBE WITH ELECTRON-GAS POSITIONIZATION AND MAGNETIC-SECTOR MASS-SPECTROMETER, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 2537-2543