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Results: 1-25/29
Authors:
DUBECKY F
FORNARI R
DARMO J
PIKNA M
GOMBIA E
KREMPASKY M
PELFER PG
SEKACOVA M
HUDEK P
RUCEK M
Citation: F. Dubecky et al., ELECTRICAL AND DETECTION PROPERTIES OF PARTICLE DETECTORS BASED ON LEC SEMIINSULATING INP, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 408(2-3), 1998, pp. 491-495
Authors:
GOMBIA E
MOSCA R
PAL D
MOTTA A
NASI L
BOSACCHI A
FRANCHI S
Citation: E. Gombia et al., DEEP-LEVEL INVESTIGATION ON N-IN0.35GA0.65AS GAAS STRUCTURES/, Solid-state electronics, 42(2), 1998, pp. 211-215
Authors:
HORVATH ZJ
ADAM M
DUCSO C
PINTER I
VANTUYEN V
BARSONY I
GOMBIA E
MOSCA R
MAKARO Z
Citation: Zj. Horvath et al., ELECTRICAL CHARACTERIZATION OF AL N-SI/P-SI SCHOTTKY JUNCTIONS PREPARED BY PLASMA IMMERSION IMPLANTATION/, Solid-state electronics, 42(2), 1998, pp. 221-228
Authors:
PAL D
GOMBIA E
MOSCA R
BOSACCHI A
FRANCHI S
Citation: D. Pal et al., DEEP LEVELS IN VIRTUALLY UNSTRAINED INGAAS LAYERS DEPOSITED ON GAAS, Journal of applied physics, 84(5), 1998, pp. 2965-2967
Authors:
CAVALCOLI D
CAVALLINI A
GOMBIA E
Citation: D. Cavalcoli et al., ENERGY-LEVELS ASSOCIATED WITH EXTENDED DEFECTS IN PLASTICALLY DEFORMED N-TYPE SILICON, Journal de physique. III, 7(7), 1997, pp. 1399-1409
Authors:
CAVALCOLI D
CAVALLINI A
GOMBIA E
Citation: D. Cavalcoli et al., THERMAL-BEHAVIOR OF DEEP LEVELS AT DISLOCATIONS IN N-TYPE SILICON, Journal de physique. III, 7(12), 1997, pp. 2361-2366
Authors:
MOSCA R
GOMBIA E
MOTTA A
BOSACCHI A
FRANCHI S
BENEVENTI C
GHEZZI C
MAGNANINI R
Citation: R. Mosca et al., INFLUENCE OF PREPARATION PROCEDURE ON THE CHARACTERISTICS OF SCHOTTKYBARRIERS FABRICATED IN-SITU ON MBE GASB, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 24-27
Authors:
CAVALCOLI D
CAVALLINI A
GOMBIA E
Citation: D. Cavalcoli et al., ANOMALOUS TEMPERATURE-DEPENDENCE OF DEEP-LEVEL-TRANSIENT-SPECTROSCOPYPEAK AMPLITUDE, Physical review. B, Condensed matter, 56(23), 1997, pp. 14890-14892
Authors:
CAVALCOLI D
CAVALLINI A
GOMBIA E
Citation: D. Cavalcoli et al., DEFECT STATES IN PLASTICALLY DEFORMED N-TYPE SILICON, Physical review. B, Condensed matter, 56(16), 1997, pp. 10208-10214
Authors:
ROTELLI B
TARRICONE L
GOMBIA E
MOSCA R
PEROTIN M
Citation: B. Rotelli et al., PHOTOELECTRIC PROPERTIES OF GASB SCHOTTKY DIODES, Journal of applied physics, 81(4), 1997, pp. 1813-1819
Authors:
FORNARI R
ZAPPETTINI A
GOMBIA E
MOSCA R
CHERKAOUI K
MARRAKCHI G
Citation: R. Fornari et al., CONDUCTIVITY CONVERSION OF LIGHTLY FE-DOPED INP INDUCED BY THERMAL ANNEALING - A METHOD FOR SEMIINSULATING MATERIAL PRODUCTION, Journal of applied physics, 81(11), 1997, pp. 7604-7611
Authors:
COFFA S
FRANZO G
PRIOLO F
LIBERTINO S
MOSCA R
GOMBIA E
SPINELLA C
Citation: S. Coffa et al., ION-IMPLANTATION DOPING OF SI FOR OPTOELECTRONIC APPLICATIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 74-80
Authors:
BARALDI A
FRIGERI P
GHEZZI C
PARISINI A
BOSACCHI A
FRANCHI S
GOMBIA E
MOSCA R
Citation: A. Baraldi et al., COEXISTENCE OF THE DX CENTER WITH NONMETASTABLE STATES OF THE DONOR IMPURITY IN SI-DOPED ALXGA1-XAS - EFFECTS ON THE LOW-TEMPERATURE ELECTRON-MOBILITY, Physical review. B, Condensed matter, 53(16), 1996, pp. 10715-10727
Authors:
GOMBIA E
MOSCA R
MOTTA A
CHAABANE H
BOSACCHI A
FRANCHI S
Citation: E. Gombia et al., QUASI-SCHOTTKY CONTACTS ON N-IN0.35GA0.65AS EPITAXIAL LAYERS DEPOSITED ON GAAS SUBSTRATES, Electronics Letters, 32(24), 1996, pp. 2283-2285
Authors:
BARALDI A
FRIGERI P
CHEZZI C
PARISINI A
BOSACCHI A
FRANCHI S
GOMBIA E
MOSCA R
Citation: A. Baraldi et al., COEXISTENCE OF THE DX CENTER AND OTHER SI-RELATED ELECTRON BOUND-STATES IN ALXGA1-XAS (VOL 28, PG 412, 1994), Materials science & engineering. B, Solid-state materials for advanced technology, 34(2-3), 1995, pp. 236-236
Authors:
HORVATH ZJ
BOSACCHI A
FRANCHI S
GOMBIA E
MOSCA R
BIONDELLI D
Citation: Zj. Horvath et al., ELECTRICAL BEHAVIOR OF EPITAXIAL AL N-AL0.25GA0.75AS JUNCTIONS - EFFECT OF THE COMPOSITION OF UNDOPED ALXGA1-XAS CAP LAYER/, Vacuum, 46(8-10), 1995, pp. 959-961
Authors:
BOSACCHI A
GOMBIA E
MOSCA R
FRANCHI S
CARNERA A
GASPAROTTO A
Citation: A. Bosacchi et al., SHALLOW DONORS AND DEEP LEVELS IN GAAS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 261-265
Authors:
BOSACCHI A
FRANCHI S
GOMBIA E
MOSCA R
BIGNAZZI A
GRILLI E
GUZZI M
ZAMBONI R
Citation: A. Bosacchi et al., PASSIVATION OF SHALLOW AND DEEP LEVELS BY HYDROGEN PLASMA EXPOSURE INALGAAS GROWN BY MOLECULAR-BEAM EPITAXY, JPN J A P 1, 33(6A), 1994, pp. 3348-3353
Authors:
FORNARI R
BRINCIOTTI A
GOMBIA E
MOSCA R
SENTIRI A
Citation: R. Fornari et al., PREPARATION AND CHARACTERIZATION OF SEMIINSULATING UNDOPED INDIUM-PHOSPHIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 95-100
DEEP-LEVEL TRANSIENT SPECTROSCOPY INVESTIGATION OF GAAS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY
Authors:
BOSACCHI A
GOMBIA E
MADELLA M
MOSCA R
FRANCHI S
Citation: A. Bosacchi et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY INVESTIGATION OF GAAS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 400-403
Authors:
BARALDI A
FRIGERI P
GHEZZI C
PARISINI A
BOSACCHI A
FRANCHI S
GOMBIA E
MOSCA R
Citation: A. Baraldi et al., COEXISTENCE OF THE DX CENTER AND OTHER SI-RELATED ELECTRON BOUND-STATES IN ALXGA1-XAS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 412-415
Authors:
BOSACCHI A
FRANCHI S
GOMBIA E
MOSCA R
BIGNAZZI A
GRILLI E
GUZZI M
ZAMBONI R
Citation: A. Bosacchi et al., EFFECTS OF HYDROGENATION OF DEEP AND SHALLOW LEVELS IN ALGAAS GROWN BY MBE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 425-428
Authors:
HORVATH ZJ
BOSACCHI A
FRANCHI S
GOMBIA E
MOSCA R
MOTTA A
Citation: Zj. Horvath et al., ANOMALOUS THERMIONIC-FIELD EMISSION IN EPITAXIAL AL N-ALGAAS JUNCTIONS/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 429-432
Authors:
MOSCA R
GOMBIA E
BOSACCHI A
FRANCHI S
GHEZZI C
FRIGERI P
Citation: R. Mosca et al., HOLE INJECTION IN ALGAAS SCHOTTKY BARRIERS - INFLUENCE ON THE DX CENTER OCCUPATION, Journal of applied physics, 75(10), 1994, pp. 5072-5078
Authors:
BOSACCHI A
FRANCHI S
GOMBIA E
MOSCA R
FANTINI F
MENOZZI R
NACCARELLA S
Citation: A. Bosacchi et al., ELECTRICAL-PROPERTIES AND THERMAL-STABILITY OF MBE-GROWN AL ALXGA1-XAS/AL0.25GA0.75AS SCHOTTKY BARRIERS/, Electronics Letters, 30(10), 1994, pp. 820-822