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Results:
1-14
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Results: 14
Authors:
PLEKHANOV PS
GOSELE UM
TAN TY
Citation: Ps. Plekhanov et al., MODELING OF NUCLEATION AND GROWTH OF VOIDS IN SILICON, Journal of applied physics, 84(2), 1998, pp. 718-726
Authors:
KOPPERSCHMIDT P
SENZ S
KASTNER G
HESSE D
GOSELE UM
Citation: P. Kopperschmidt et al., MATERIALS INTEGRATION OF GALLIUM-ARSENIDE AND SILICON BY WAFER BONDING, Applied physics letters, 72(24), 1998, pp. 3181-3183
Authors:
KOPPERSCHMIDT P
KASTNER G
HESSE D
GOSELE UM
LORENZ M
Citation: P. Kopperschmidt et al., BACK-TO-BACK SUBSTRATE WAFER BONDING - A NEW APPROACH TO THE FABRICATION OF DOUBLE-SIDE COATED WAFERS, Applied physics A: Materials science & processing, 64(2), 1997, pp. 211-212
Authors:
TAN TY
PLEKHANOV P
GOSELE UM
Citation: Ty. Tan et al., NUCLEATION BARRIER OF VOIDS AND DISLOCATION LOOPS IN SILICON, Applied physics letters, 70(13), 1997, pp. 1715-1717
Authors:
TAN TY
GOSELE UM
Citation: Ty. Tan et Um. Gosele, EFFECTS OF P-TYPE DOPANTS ON ENHANCING ALAS GAAS SUPERLATTICE DISORDERING/, Materials chemistry and physics, 44(1), 1996, pp. 45-50
Authors:
JOSHI SM
GOSELE UM
TAN TY
Citation: Sm. Joshi et al., IMPROVEMENT OF MINORITY-CARRIER DIFFUSION LENGTH IN SI BY AL GETTERING, Journal of applied physics, 77(8), 1995, pp. 3858-3863
Authors:
UEMATSU M
WERNER P
SCHULTZ M
TAN TY
GOSELE UM
Citation: M. Uematsu et al., SULFUR DIFFUSION AND THE INTERSTITIAL CONTRIBUTION TO ARSENIC SELF-DIFFUSION IN GAAS, Applied physics letters, 67(19), 1995, pp. 2863-2865
Authors:
TAYLOR WJ
GOSELE UM
TAN TY
Citation: Wj. Taylor et al., PRECIPITATE STRAIN RELIEF VIA POINT-DEFECT INTERACTION - MODELS FOR SIO2 IN SILICON (VOL 34, PG 166, 1993), Materials chemistry and physics, 36(3-4), 1994, pp. 389-389
Authors:
TAYLOR WJ
GOSELE UM
TAN TY
Citation: Wj. Taylor et al., COPRECIPITATION OF CARBON AND OXYGEN IN SILICON - THE DOMINANT FLUX CRITERION, JPN J A P 1, 32(11A), 1993, pp. 4857-4862
Authors:
TAYLOR WJ
GOSELE UM
TAN TY
Citation: Wj. Taylor et al., PRECIPITATE STRAIN RELIEF VIA POINT-DEFECT INTERACTION - MODELS FOR SIO2 IN SILICON, Materials chemistry and physics, 34(2), 1993, pp. 166-174
Authors:
YOU HM
TAN TY
GOSELE UM
LEE ST
HOFLER GE
HSIEH KC
HOLONYAK N
Citation: Hm. You et al., AL-GA INTERDIFFUSION, CARBON ACCEPTOR DIFFUSION, AND HOLE REDUCTION IN CARBON-DOPED AL0.4GA0.6AS GAAS SUPERLATTICES - THE AS4 PRESSURE EFFECT/, Journal of applied physics, 74(4), 1993, pp. 2450-2460
Authors:
YOU HM
GOSELE UM
TAN TY
Citation: Hm. You et al., SIMULATION OF THE TRANSIENT INDIFFUSION-SEGREGATION PROCESS OF TRIPLYNEGATIVELY CHARGED GA VACANCIES IN GAAS AND ALAS GAAS SUPERLATTICES/, Journal of applied physics, 74(4), 1993, pp. 2461-2470
Authors:
YOU HM
GOSELE UM
TAN TY
Citation: Hm. You et al., A STUDY OF SI OUTDIFFUSION FROM PREDOPED GAAS, Journal of applied physics, 73(11), 1993, pp. 7207-7216
Authors:
GOSELE UM
TAN TY
Citation: Um. Gosele et Ty. Tan, POINT-DEFECTS AND DIFFUSION IN SEMICONDUCTORS, MRS bulletin, 16(11), 1991, pp. 42-46
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1-14
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