ACNP - Italian Periodicals Catalogue

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Results: 1-10 |

Results: 10

INTERDIFFUSION IN INGAAS GAAS AND INGAAS/GAASP QUANTUM-WELLS/

Authors: OSTER A BUGGE F GRAMLICH S PROCOP M ZEIMER U WEYERS M

Citation: A. Oster et al., INTERDIFFUSION IN INGAAS GAAS AND INGAAS/GAASP QUANTUM-WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 20-23

ASSESSMENT OF COMPENSATION RATIO IN HIGH-PURITY GAAS USING PHOTOLUMINESCENCE

Authors: OELGART G GRAMLICH S BERGUNDE T RICHTER E WEYERS M

Citation: G. Oelgart et al., ASSESSMENT OF COMPENSATION RATIO IN HIGH-PURITY GAAS USING PHOTOLUMINESCENCE, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 228-232

HIGH-RESOLUTION X-RAY-DIFFRACTION INVESTIGATION OF CRYSTAL PERFECTIONAND RELAXATION OF GAAS INGAAS/GAAS QUANTUM-WELLS DEPENDING ON MOVPE GROWTH-CONDITIONS/

Authors: ZEIMER U BUGGE F GRAMLICH S URBAN I OSTER A WEYERS M

Citation: U. Zeimer et al., HIGH-RESOLUTION X-RAY-DIFFRACTION INVESTIGATION OF CRYSTAL PERFECTIONAND RELAXATION OF GAAS INGAAS/GAAS QUANTUM-WELLS DEPENDING ON MOVPE GROWTH-CONDITIONS/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 369-376

INFLUENCE OF THE GROWTH TEMPERATURE AND SUBSTRATE ORIENTATION ON THE LAYER PROPERTIES OF MOVPE-GROWN (GA,IN)(AS,P) GAAS/

Authors: KNAUER A RECHENBERG I BUGGE F GRAMLICH S OELGARDT G OSTER A WEYERS M

Citation: A. Knauer et al., INFLUENCE OF THE GROWTH TEMPERATURE AND SUBSTRATE ORIENTATION ON THE LAYER PROPERTIES OF MOVPE-GROWN (GA,IN)(AS,P) GAAS/, Journal of crystal growth, 170(1-4), 1997, pp. 281-286

EVALUATION OF STRAINED INGAAS GAAS QUANTUM-WELLS BY ATOMIC-FORCE MICROSCOPY/

Authors: SATO M ZEIMER U BUGGE F GRAMLICH S WEYERS M

Citation: M. Sato et al., EVALUATION OF STRAINED INGAAS GAAS QUANTUM-WELLS BY ATOMIC-FORCE MICROSCOPY/, Applied physics letters, 70(9), 1997, pp. 1134-1136

METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAINASP GAAS/

Authors: KNAUER A ERBERT G GRAMLICH S OSTER A RICHTER E ZEIMER U WEYERS M

Citation: A. Knauer et al., METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAINASP GAAS/, Journal of electronic materials, 24(11), 1995, pp. 1655-1658

INPLANE PHOTOLUMINESCENCE OF VERTICAL-CAVITY SURFACE-EMITTING LASER STRUCTURES

Authors: GRAMLICH S SEBASTIAN J WEYERS M HEY R

Citation: S. Gramlich et al., INPLANE PHOTOLUMINESCENCE OF VERTICAL-CAVITY SURFACE-EMITTING LASER STRUCTURES, Physica status solidi. a, Applied research, 152(1), 1995, pp. 293-301

POTENTIAL SOURCES OF DEGRADATION IN INGAAS GAAS LASER-DIODES/

Authors: RECHENBERG I BEISTER G BUGGE F ERBERT G GRAMLICH S KLEIN A MAEGE J PILATZEK M RICHTER U RUVIMOV SS TREPTOW H WEYERS M

Citation: I. Rechenberg et al., POTENTIAL SOURCES OF DEGRADATION IN INGAAS GAAS LASER-DIODES/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 310-313

EFFECT OF GROWTH INTERRUPTION ON PERFORMANCE OF ALGAAS INGAAS/GAAS QUANTUM-WELL LASERS/

Authors: BUGGE F BEISTER G ERBERT G GRAMLICH S RECHENBERG I TREPTOW H WEYERS M

Citation: F. Bugge et al., EFFECT OF GROWTH INTERRUPTION ON PERFORMANCE OF ALGAAS INGAAS/GAAS QUANTUM-WELL LASERS/, Journal of crystal growth, 145(1-4), 1994, pp. 907-910

OPTIMIZED PROTON IMPLANTATION STEP FOR VERTICAL-CAVITY SURFACE-EMITTING LASERS

Authors: RESSEL P STRUSNY H GRAMLICH S ZEIMER U SEBASTIAN J VOGEL K

Citation: P. Ressel et al., OPTIMIZED PROTON IMPLANTATION STEP FOR VERTICAL-CAVITY SURFACE-EMITTING LASERS, Electronics Letters, 29(10), 1993, pp. 918-919

Risultati: 1-10 |