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Results: 1-17 |
Results: 17
ELECTRON-NUCLEAR DOUBLE-RESONANCE INVESTIGATION OF IRON-ACCEPTOR PAIRS IN SILICON
Authors: SPAETH JM MARTINI S GREULICHWEBER S
Citation: Jm. Spaeth et al., ELECTRON-NUCLEAR DOUBLE-RESONANCE INVESTIGATION OF IRON-ACCEPTOR PAIRS IN SILICON, Semiconductor science and technology, 13(7), 1998, pp. 725-732
EPR AND ENDOR INVESTIGATIONS OF B-ACCEPTORS IN 3C-SILICON-CARBIDE, 4H-SILICON-CARBIDE AND 6H-SILICON-CARBIDE
Authors: GREULICHWEBER S FEEGE F KALABUKHOVA KN LUKIN SN SPAETH JM ADRIAN FJ
Citation: S. Greulichweber et al., EPR AND ENDOR INVESTIGATIONS OF B-ACCEPTORS IN 3C-SILICON-CARBIDE, 4H-SILICON-CARBIDE AND 6H-SILICON-CARBIDE, Semiconductor science and technology, 13(1), 1998, pp. 59-70
EPR AND ENDOR INVESTIGATIONS OF SHALLOW IMPURITIES IN SIC POLYTYPES
Authors: GREULICHWEBER S
Citation: S. Greulichweber, EPR AND ENDOR INVESTIGATIONS OF SHALLOW IMPURITIES IN SIC POLYTYPES, Physica status solidi. a, Applied research, 162(1), 1997, pp. 95-151
OPTICALLY DETECTED ELECTRON-PARAMAGNETIC-RESONANCE OF THE SHALLOW ALUMINUM ACCEPTOR IN 4H-SILICON-CARBIDE AND 6H-SILICON-CARBIDE
Authors: REINKE J GREULICHWEBER S SPAETH JM
Citation: J. Reinke et al., OPTICALLY DETECTED ELECTRON-PARAMAGNETIC-RESONANCE OF THE SHALLOW ALUMINUM ACCEPTOR IN 4H-SILICON-CARBIDE AND 6H-SILICON-CARBIDE, Solid state communications, 98(9), 1996, pp. 835-838
ELECTRON-PARAMAGNETIC-RESONANCE OF THE SCANDIUM ACCEPTOR IN 6H SILICON-CARBIDE
Authors: MARZ M REINKE J GREULICHWEBER S SPAETH JM OVERHOF H MOKHOV EN ROENKOV AD KALABUKHOVA EN
Citation: M. Marz et al., ELECTRON-PARAMAGNETIC-RESONANCE OF THE SCANDIUM ACCEPTOR IN 6H SILICON-CARBIDE, Solid state communications, 98(5), 1996, pp. 439-443
ELECTRICAL DETECTION OF ELECTRON-NUCLEAR DOUBLE-RESONANCE IN SILICON
Authors: STICH B GREULICHWEBER S SPAETH JM
Citation: B. Stich et al., ELECTRICAL DETECTION OF ELECTRON-NUCLEAR DOUBLE-RESONANCE IN SILICON, Applied physics letters, 68(8), 1996, pp. 1102-1104
AN ELECTRON-SPIN-RESONANCE STUDY OF VANADIUM-DOPED ALPHA-TEO2 SINGLE-CRYSTALS
Authors: EDWARDS GJ GILLIAM OR BARTRAM RH WATTERICH A VOSZKA R NIKLAS JR GREULICHWEBER S SPAETH JM
Citation: Gj. Edwards et al., AN ELECTRON-SPIN-RESONANCE STUDY OF VANADIUM-DOPED ALPHA-TEO2 SINGLE-CRYSTALS, Journal of physics. Condensed matter, 7(15), 1995, pp. 3013-3022
EPR AND ENDOR OBSERVATION OF ORTHORHOMBIC AU-LI AND PT-LI PAIRS IN SILICON - ON THE PROBLEM OF THE OBSERVATION OF ISOLATED AU-SI(0) WITH MAGNETIC-RESONANCE
Authors: GREULICHWEBER S ALTEHELD P REINKE J WEIHRICH H OVERHOF H SPAETH JM
Citation: S. Greulichweber et al., EPR AND ENDOR OBSERVATION OF ORTHORHOMBIC AU-LI AND PT-LI PAIRS IN SILICON - ON THE PROBLEM OF THE OBSERVATION OF ISOLATED AU-SI(0) WITH MAGNETIC-RESONANCE, Semiconductor science and technology, 10(7), 1995, pp. 977-982
AGGREGATE DEFECTS OF GOLD AND PLATINUM WITH LITHIUM IN SILICON .1. MAGNETIC-RESONANCE INVESTIGATIONS
Authors: ALTEHELD P GREULICHWEBER S SPAETH JM WEIHRICH H OVERHOF H HOHNE M
Citation: P. Alteheld et al., AGGREGATE DEFECTS OF GOLD AND PLATINUM WITH LITHIUM IN SILICON .1. MAGNETIC-RESONANCE INVESTIGATIONS, Physical review. B, Condensed matter, 52(7), 1995, pp. 4998-5006
AGGREGATE DEFECTS OF GOLD AND PLATINUM WITH LITHIUM IN SILICON .2. ELECTRONIC-STRUCTURE CALCULATIONS
Authors: WEIHRICH H OVERHOF H ALTEHELD P GREULICHWEBER S SPAETH JM
Citation: H. Weihrich et al., AGGREGATE DEFECTS OF GOLD AND PLATINUM WITH LITHIUM IN SILICON .2. ELECTRONIC-STRUCTURE CALCULATIONS, Physical review. B, Condensed matter, 52(7), 1995, pp. 5007-5020
FURTHER EVIDENCE FOR THE B-SI(-)-C-CARBIDE FROM A THEORETICAL-ANALYSIS OF THE HYPERFINE INTERACTIONS( MODEL OF THE BORON ACCEPTOR IN 6H SILICON)
Authors: ADRIAN FJ GREULICHWEBER S SPAETH JM
Citation: Fj. Adrian et al., FURTHER EVIDENCE FOR THE B-SI(-)-C-CARBIDE FROM A THEORETICAL-ANALYSIS OF THE HYPERFINE INTERACTIONS( MODEL OF THE BORON ACCEPTOR IN 6H SILICON), Solid state communications, 94(1), 1995, pp. 41-44
ON THE MICROSCOPIC STRUCTURES OF SHALLOW DONORS IN 6H SIC - STUDIES WITH EPR AND ENDOR
Authors: GREULICHWEBER S FEEGE M SPAETH JM KALABUKHOVA EN LUKIN SN MOKHOV EN
Citation: S. Greulichweber et al., ON THE MICROSCOPIC STRUCTURES OF SHALLOW DONORS IN 6H SIC - STUDIES WITH EPR AND ENDOR, Solid state communications, 93(5), 1995, pp. 393-397
ELECTRICAL DETECTION OF ELECTRON-PARAMAGNETIC-RESONANCE - NEW POSSIBILITIES FOR THE STUDY OF POINT-DEFECTS
Authors: STICH B GREULICHWEBER S SPAETH JM
Citation: B. Stich et al., ELECTRICAL DETECTION OF ELECTRON-PARAMAGNETIC-RESONANCE - NEW POSSIBILITIES FOR THE STUDY OF POINT-DEFECTS, Journal of applied physics, 77(4), 1995, pp. 1546-1553
DISTANT IRON-SHALLOW-DONOR PAIRS IN SILICON DETECTED BY ELECTRON-PARAMAGNETIC-RESONANCE
Authors: HOHNE M JUDA U RIEMANN H SPAETH JM GREULICHWEBER S
Citation: M. Hohne et al., DISTANT IRON-SHALLOW-DONOR PAIRS IN SILICON DETECTED BY ELECTRON-PARAMAGNETIC-RESONANCE, Physical review. B, Condensed matter, 49(24), 1994, pp. 16999-17006
OBSERVATION OF AN INTERSTITIAL MANGANESE IMPURITY IN 6H-SIC
Authors: FEEGE M GREULICHWEBER S SPAETH JM
Citation: M. Feege et al., OBSERVATION OF AN INTERSTITIAL MANGANESE IMPURITY IN 6H-SIC, Semiconductor science and technology, 8(8), 1993, pp. 1620-1625
ENDOR INVESTIGATION OF THE MICROSCOPIC STRUCTURE OF THE BORON ACCEPTOR IN 6H-SIC
Authors: MULLER R FEEGE M GREULICHWEBER S SPAETH JM
Citation: R. Muller et al., ENDOR INVESTIGATION OF THE MICROSCOPIC STRUCTURE OF THE BORON ACCEPTOR IN 6H-SIC, Semiconductor science and technology, 8(7), 1993, pp. 1377-1384
MAGNETIC CIRCULAR-DICHROISM OF A VANADIUM IMPURITY IN 6H-SILICON CARBIDE
Authors: REINKE J WEIHRICH H GREULICHWEBER S SPAETH JM
Citation: J. Reinke et al., MAGNETIC CIRCULAR-DICHROISM OF A VANADIUM IMPURITY IN 6H-SILICON CARBIDE, Semiconductor science and technology, 8(10), 1993, pp. 1862-1867
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