Citation: Sn. Grinyaev et Va. Chaldyshev, LOCALIZED STATES NEAR THE BAND-GAP OF GAAS CAUSED BY TETRAHEDRAL ARSENIC CLUSTERS, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 980-984
Citation: Sn. Grinyaev et Vv. Lopatin, CHEMICAL-BOND AND ELECTRONIC-STRUCTURE ANISOTROPIES IN THE GRAPHITIC AND RHOMBOHEDRAL MODIFICATIONS OF BORON-NITRIDE, Journal of structural chemistry, 38(1), 1997, pp. 25-33
Citation: Sn. Grinyaev et Va. Chaldyshev, CALCULATION OF THE ELECTRONIC-ENERGY SPECTRUM OF GALLIUM-ARSENIDE WITH ARSENIC CLUSTERS, Semiconductors, 30(12), 1996, pp. 1144-1147
Citation: Sn. Grinyaev et Vv. Lopatin, VALENT CHARGE-DISTRIBUTION AND THE LEVEL OF ELECTRONEUTRALITY IN GRAPHITE-LIKE AND RHOMBOHEDRAL BORON-NITRIDE, Fizika tverdogo tela, 38(12), 1996, pp. 3576-3584
Citation: Sn. Grinyaev et al., MODEL FOR THE INTERACTION OF ELECTRON WAVES WITH HETEROJUNCTIONS IN GAAS ALAS(001)/, Semiconductors, 28(8), 1994, pp. 784-788
Citation: Sn. Grinyaev et Sg. Kataev, ELECTRONIC-STRUCTURE OF ZNXCDYHG1-X-YTE ALLOYS AND RELATED HETEROJUNCTIONS, Physica. B, Condensed matter, 191(3-4), 1993, pp. 317-322