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Results:
1-9
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Results: 9
Authors:
GRINYAEV SN
CHALDYSHEV VA
Citation: Sn. Grinyaev et Va. Chaldyshev, LOCALIZED STATES NEAR THE BAND-GAP OF GAAS CAUSED BY TETRAHEDRAL ARSENIC CLUSTERS, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 980-984
Authors:
GRINYAEV SN
KARAVAEV GF
Citation: Sn. Grinyaev et Gf. Karavaev, DEEP VACANCY LEVELS IN (ALAS)(1)(GAAS)(3) SUPERLATTICES, Semiconductors, 31(5), 1997, pp. 460-469
Authors:
GRINYAEV SN
LOPATIN VV
Citation: Sn. Grinyaev et Vv. Lopatin, CHEMICAL-BOND AND ELECTRONIC-STRUCTURE ANISOTROPIES IN THE GRAPHITIC AND RHOMBOHEDRAL MODIFICATIONS OF BORON-NITRIDE, Journal of structural chemistry, 38(1), 1997, pp. 25-33
Authors:
GRINYAEV SN
CHALDYSHEV VA
Citation: Sn. Grinyaev et Va. Chaldyshev, CALCULATION OF THE ELECTRONIC-ENERGY SPECTRUM OF GALLIUM-ARSENIDE WITH ARSENIC CLUSTERS, Semiconductors, 30(12), 1996, pp. 1144-1147
Authors:
GRINYAEV SN
KARAVAEV GF
TYUTEREV VG
Citation: Sn. Grinyaev et al., INTERVALLEY DEFORMATION POTENTIALS IN (ALAS)(1)(GAAS)(1)(001) SUPERLATTICE, Physica. B, Condensed matter, 228(3-4), 1996, pp. 319-328
Authors:
GRINYAEV SN
LOPATIN VV
Citation: Sn. Grinyaev et Vv. Lopatin, VALENT CHARGE-DISTRIBUTION AND THE LEVEL OF ELECTRONEUTRALITY IN GRAPHITE-LIKE AND RHOMBOHEDRAL BORON-NITRIDE, Fizika tverdogo tela, 38(12), 1996, pp. 3576-3584
Authors:
BRUDNYI VN
GRINYAEV SN
STEPANOV VE
Citation: Vn. Brudnyi et al., LOCAL NEUTRALITY CONCEPTION - FERMI-LEVEL PINNING IN DEFECTIVE SEMICONDUCTORS, Physica. B, Condensed matter, 212(4), 1995, pp. 429-435
Authors:
GRINYAEV SN
KARAVAEV GF
CHERNYSHOV VN
Citation: Sn. Grinyaev et al., MODEL FOR THE INTERACTION OF ELECTRON WAVES WITH HETEROJUNCTIONS IN GAAS ALAS(001)/, Semiconductors, 28(8), 1994, pp. 784-788
Authors:
GRINYAEV SN
KATAEV SG
Citation: Sn. Grinyaev et Sg. Kataev, ELECTRONIC-STRUCTURE OF ZNXCDYHG1-X-YTE ALLOYS AND RELATED HETEROJUNCTIONS, Physica. B, Condensed matter, 191(3-4), 1993, pp. 317-322
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1-9
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