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Results: 1-15 |
Results: 15

Authors: Gaggero-Sager, LM
Citation: Lm. Gaggero-sager, Exchange and correlation via functional of Thomas-Fermi in delta-doped quantum wells, MODEL SIM M, 9(1), 2001, pp. 1-5

Authors: Gaggero-Sager, LM Vlaev, S Monsivais, G
Citation: Lm. Gaggero-sager et al., A tight binding calculation of delta-doped quantum wells in Si, COMP MAT SC, 20(2), 2001, pp. 177-180

Authors: Gaggero-Sager, LM Mora-Ramos, ME
Citation: Lm. Gaggero-sager et Me. Mora-ramos, Electronic energy spectrum of nitride single heterostructure field effect transistors, DIAM RELAT, 10(3-7), 2001, pp. 1340-1342

Authors: Martinez-Orozco, JC Gaggero-Sager, LM Vlaev, SJ
Citation: Jc. Martinez-orozco et al., A simple model for the differential capacitance profile in the atomic layer doped field effect transistor (ALD-FET) in GaAs, MAT SCI E B, 84(3), 2001, pp. 155-158

Authors: Gaggero-Sager, LM M'Peko, JC Perez-Alvarez, R
Citation: Lm. Gaggero-sager et al., Thomas-Fermi approximation in two p-type delta-doped quantum wells in GaAsand Si, REV MEX FIS, 47(2), 2001, pp. 153-157

Authors: Vlaev, SJ Gaggero-Sager, LM
Citation: Sj. Vlaev et Lm. Gaggero-sager, Quasi-bound hole states in delta-doped quantum wells, PHYS ST S-B, 220(1), 2000, pp. 147-151

Authors: Gaggero-Sager, LM Mora-Ramos, ME
Citation: Lm. Gaggero-sager et Me. Mora-ramos, Hole energy levels in p-type delta-doped Si quantum wells: Influence of the spilt-off band, PHYS ST S-B, 220(1), 2000, pp. 163-166

Authors: Gaggero-Sager, LM Pujals, ER Sotolongo-Costa, O
Citation: Lm. Gaggero-sager et al., Self-similarity in a Cantor-like semiconductor quantum well, PHYS ST S-B, 220(1), 2000, pp. 167-169

Authors: Mora-Ramos, ME Gaggero-Sager, LM
Citation: Me. Mora-ramos et Lm. Gaggero-sager, Electronic states of GaN-based heterostructures in a Thomas-Fermi approximation, PHYS ST S-B, 220(1), 2000, pp. 175-179

Authors: Gaggero-Sager, LM Mora-Ramos, ME
Citation: Lm. Gaggero-sager et Me. Mora-ramos, Hole energy levels in p-type delta-doped Si quantum wells, SOL ST ELEC, 44(1), 2000, pp. 175-183

Authors: Gaggero-Sager, LM Vlaev, SJ
Citation: Lm. Gaggero-sager et Sj. Vlaev, Exchange and correlation in a semi-empirical tight binding calculation within the Thomas-Fermi approximation, PHYS ST S-B, 215(2), 1999, pp. 1049-1055

Authors: Gaggero-Sager, LM
Citation: Lm. Gaggero-sager, Exchange and correlation in the Thomas-Fermi approximation, J MATH CHEM, 25(2-3), 1999, pp. 317-320

Authors: Vlaev, SJ Gaggero-Sager, LM Contreras-Solorio, DA Hernandez-Calderon, I
Citation: Sj. Vlaev et al., Electronic states in parabolic versus diffused quantum wells, REV MEX FIS, 44, 1998, pp. 141-143

Authors: Mora-Ramos, ME Gaggero-Sager, LM
Citation: Me. Mora-ramos et Lm. Gaggero-sager, A simple model for atomic layer doped field-effect transistor (ALD-FET) electronic states, REV MEX FIS, 44, 1998, pp. 165-167

Authors: Gaggero-Sager, LM Perez-Alvarez, R
Citation: Lm. Gaggero-sager et R. Perez-alvarez, Electron structure of p-type doped delta systems, REV MEX FIS, 44, 1998, pp. 168-172
Risultati: 1-15 |