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Results:
1-17
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Results: 17
Authors:
Taliercio, T
Lefebvre, P
Gallart, M
Morel, A
Citation: T. Taliercio et al., Optical properties of group-III nitride quantum wells and quantum boxes, J PHYS-COND, 13(32), 2001, pp. 7027-7042
Authors:
Gallart, M
Morel, A
Taliercio, T
Lefebvre, P
Gil, B
Allegre, J
Mathieu, H
Grandjean, N
Massies, J
Grzegory, I
Porowsky, S
Citation: M. Gallart et al., Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells, MAT SCI E B, 82(1-3), 2001, pp. 140-142
Authors:
Taliercio, T
Lefebvre, P
Morel, A
Gallart, M
Allegre, J
Gil, B
Mathieu, H
Grandjean, N
Massies, J
Citation: T. Taliercio et al., Optical properties of self-assembled InGaN/GaN quantum dots, MAT SCI E B, 82(1-3), 2001, pp. 151-155
Authors:
Morel, A
Taliercio, T
Lefebvre, P
Gallart, M
Gil, B
Grandjean, N
Massies, J
Grzegory, I
Porowski, S
Citation: A. Morel et al., Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grownby molecular beam epitaxy, MAT SCI E B, 82(1-3), 2001, pp. 173-177
Authors:
Morel, A
Lefebvre, P
Taliercio, T
Gallart, M
Gil, B
Mathieu, H
Citation: A. Morel et al., Donor binding energies in group III-nitride-based quantum wells: influenceof internal electric fields, MAT SCI E B, 82(1-3), 2001, pp. 221-223
Authors:
Lefebvre, P
Taliercio, T
Kalliakos, S
Morel, A
Zhang, XB
Gallart, M
Bretagnon, T
Gil, B
Grandjean, N
Damilano, B
Massies, J
Citation: P. Lefebvre et al., Carrier dynamics in group-III nitride low-dimensional systems: Localization versus quantum-confined Stark effect, PHYS ST S-B, 228(1), 2001, pp. 65-72
Authors:
Taliercio, T
Gallart, M
Lefebvre, P
Morel, A
Gil, B
Allegre, J
Grandjean, N
Massies, J
Grzegory, I
Porowski, S
Citation: T. Taliercio et al., Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlNquantum wells grown by molecular beam epitaxy, SOL ST COMM, 117(7), 2001, pp. 445-448
Authors:
Gallart, M
Lefebvre, P
Morel, A
Taliercio, T
Gil, B
Allegre, J
Mathieu, H
Damilano, B
Grandjean, N
Massies, J
Citation: M. Gallart et al., Reduction of carrier in-plane mobility in group-III nitride based quantum wells: The role of internal electric fields, PHYS ST S-A, 183(1), 2001, pp. 61-66
Authors:
Lefebvre, P
Morel, A
Gallart, M
Taliercio, T
Allegre, J
Gil, B
Mathieu, H
Damilano, B
Grandjean, N
Massies, J
Citation: P. Lefebvre et al., High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy, APPL PHYS L, 78(9), 2001, pp. 1252-1254
Authors:
Lefebvre, P
Taliercio, T
Morel, A
Allegre, J
Gallart, M
Gil, B
Mathieu, H
Damilano, B
Grandjean, N
Massies, J
Citation: P. Lefebvre et al., Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes, APPL PHYS L, 78(11), 2001, pp. 1538-1540
Authors:
Gallart, M
Morel, A
Taliercio, T
Lefebvre, P
Gil, B
Allegre, J
Mathieu, H
Grandjean, N
Leroux, M
Massies, J
Citation: M. Gallart et al., Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum, PHYS ST S-A, 180(1), 2000, pp. 127-132
Authors:
Morel, A
Gallart, M
Taliercio, T
Lefebvre, P
Gil, B
Allegre, J
Mathieu, H
Damilano, B
Grandjean, N
Massies, J
Citation: A. Morel et al., Time-resolved spectroscopy of MBE-grown InGaN/GaN self-formed quantum dots, PHYS ST S-A, 180(1), 2000, pp. 375-380
Authors:
Gallart, M
Taliercio, T
Lefebvre, P
Gil, B
Allegre, J
Mathieu, H
Grandjean, N
Leroux, M
Massies, J
Bigenwald, P
Citation: M. Gallart et al., Time-resolved spectroscopy of MBE-grown nitride based heterostructures, PHYS ST S-A, 178(1), 2000, pp. 101-105
Authors:
Grandjean, N
Damilano, B
Massies, J
Neu, G
Teissere, M
Grzegory, I
Porowski, S
Gallart, M
Lefebvre, P
Gil, B
Albrecht, M
Citation: N. Grandjean et al., Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate, J APPL PHYS, 88(1), 2000, pp. 183-187
Authors:
Lefebvre, P
Gallart, M
Taliercio, T
Gil, B
Allegre, J
Mathieu, H
Grandjean, N
Leroux, M
Massies, J
Bigenwald, P
Citation: P. Lefebvre et al., Dynamics of excitons in GaN-AlGaN MQWs with varying depths, thicknesses and barrier widths, PHYS ST S-B, 216(1), 1999, pp. 361-364
Authors:
Gallart, M
Taliercio, T
Alemu, A
Lefebvre, P
Gil, B
Allegre, J
Mathieu, H
Nakamura, S
Citation: M. Gallart et al., CW and time-resolved optical spectroscopy of GaN epilayers and GaN-AlGaN quantum wells grown on A-plane sapphire, PHYS ST S-B, 216(1), 1999, pp. 365-369
Authors:
Gomez-Arbones, X
Pinacho, A
Ortiz, P
Macia, J
Gallart, M
Araguas, C
Sanchez, JM
Teixido, M
Citation: X. Gomez-arbones et al., A simple flow-cytometric method for absolute counting of residual white blood cells in leukocyte-reduced packed red cells, VOX SANGUIN, 76(1), 1999, pp. 64-65
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