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Results:
1-7
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Results: 7
Authors:
Mogilyanski, D
Gartstein, E
Blumin, M
Fekete, D
Kohler, R
Citation: D. Mogilyanski et al., Microstructural aspects of island nucleation process in elastically relaxed LPOMVPE grown In0.2Ga0.8As/GaAs multilayer, J PHYS D, 34(10A), 2001, pp. A19-A24
Authors:
Gartstein, E
Mandelbrot, M
Mogilyanski, D
Citation: E. Gartstein et al., Instrumental origin effects in triple-axis diffraction, J PHYS D, 34(10A), 2001, pp. A57-A63
Authors:
Gartstein, E
Mogilyanski, D
Metzger, H
Citation: E. Gartstein et al., Morphology, strain and microstructure interrelation in Si-on-sapphire heterostructure, SURF REV L, 6(6), 1999, pp. 1003-1013
Authors:
Metzger, TH
Pietsch, U
Gartstein, E
Citation: Th. Metzger et al., High-resolution lattice parameter measurement by X-ray grazing incidence diffraction - Application to the interface of silicon on sapphire, PHYS ST S-A, 174(2), 1999, pp. 395-402
Authors:
Mogilyanski, D
Gartstein, E
Blumin, M
Fekete, D
Opitz, R
Kohler, R
Citation: D. Mogilyanski et al., Investigation of the interface roughness in a LPOMVPE grown AlAs GaAs multilayer, J PHYS D, 32(10A), 1999, pp. A239-A244
Authors:
Gartstein, E
Mogilyanski, D
Frumin, N
Citation: E. Gartstein et al., Interfacial microstructure in Si-on-sapphire heterostructure, J CRYST GR, 205(1-2), 1999, pp. 64-70
Authors:
Mogilyanski, D
Blumin, M
Gartstein, E
Opitz, R
Kohler, R
Citation: D. Mogilyanski et al., Structural characterization of LPOMVPE grown AlAs/GaAs multilayers, J CRYST GR, 199, 1999, pp. 1070-1076
Risultati:
1-7
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