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Results: 1-9 |
Results: 9
Valence band intersubband electro luminescence from Si/SiGe quantum cascade structures
Authors: Sigg, H Dehlinger, G Diehl, L Gennser, U Stutz, S Faist, J Grutzmacher, D Ensslin, K Muller, E
Citation: H. Sigg et al., Valence band intersubband electro luminescence from Si/SiGe quantum cascade structures, PHYSICA E, 11(2-3), 2001, pp. 240-244
Single-hole transistor in a p-Si/SiGe quantum well
Authors: Dotsch, U Gennser, U David, C Dehlinger, G Grutzmacher, D Heinzel, T Luscher, S Ensslin, K
Citation: U. Dotsch et al., Single-hole transistor in a p-Si/SiGe quantum well, APPL PHYS L, 78(3), 2001, pp. 341-343
Coexistence of weak localization and a metallic phase in Si/SiGe quantum wells
Authors: Senz, V Heinzel, T Ihn, T Ensslin, K Dehlinger, G Grutzmacher, D Gennser, U
Citation: V. Senz et al., Coexistence of weak localization and a metallic phase in Si/SiGe quantum wells, PHYS REV B, 61(8), 2000, pp. R5082-R5085
Effect of the bimodal size distribution on the optical properties of self-assembled Ge/Si(001) quantum dots
Authors: Yam, V Le Thanh, V Compagnon, U Gennser, U Boucaud, P Debarre, D Bouchier, D
Citation: V. Yam et al., Effect of the bimodal size distribution on the optical properties of self-assembled Ge/Si(001) quantum dots, THIN SOL FI, 380(1-2), 2000, pp. 78-81
Investigation of the emitter structure in SiGe/Si resonant tunneling structures
Authors: Dehlinger, G Gennser, U Grutzmacher, D Ihn, T Muller, E Ensslin, K
Citation: G. Dehlinger et al., Investigation of the emitter structure in SiGe/Si resonant tunneling structures, THIN SOL FI, 369(1-2), 2000, pp. 390-393
Intersubband electroluminescence from silicon-based quantum cascade structures
Authors: Dehlinger, G Diehl, L Gennser, U Sigg, H Faist, J Ensslin, K Grutzmacher, D Muller, E
Citation: G. Dehlinger et al., Intersubband electroluminescence from silicon-based quantum cascade structures, SCIENCE, 290(5500), 2000, pp. 2277
Analysis of the metallic phase of two-dimensional holes in SiGe in terms of temperature dependent screening
Authors: Senz, V Ihn, T Heinzel, T Ensslin, K Dehlinger, G Grutzmacher, D Gennser, U
Citation: V. Senz et al., Analysis of the metallic phase of two-dimensional holes in SiGe in terms of temperature dependent screening, PHYS REV L, 85(20), 2000, pp. 4357-4360
Pre-structuring of silicon substrates to investigate MBE-growth of SiGe layers
Authors: David, C Hartmann, R Gennser, U Muller, E Grutzmacher, D
Citation: C. David et al., Pre-structuring of silicon substrates to investigate MBE-growth of SiGe layers, MICROEL ENG, 46(1-4), 1999, pp. 275-278
Band gap and band alignment of strain reduced Si/Si1-x-yGexCy multiple quantum well structures obtained by photoluminescence measurements
Authors: Hartmann, R Gennser, U Sigg, H Grutzmacher, D Ensslin, K
Citation: R. Hartmann et al., Band gap and band alignment of strain reduced Si/Si1-x-yGexCy multiple quantum well structures obtained by photoluminescence measurements, APPL PHYS L, 73(9), 1998, pp. 1257-1259
Risultati: 1-9 |