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Results:
1-23
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Results: 23
Authors:
Bertz, A
Symanzik, H
Steiniger, C
Hoffer, A
Griesbach, K
Stegemann, K
Ebest, G
Gessner, T
Citation: A. Bertz et al., A single-crystal Si-resonator with on-chip readout amplifier in standard CMOS, SENS ACTU-A, 93(2), 2001, pp. 163-172
Authors:
Himcinschi, C
Friedrich, M
Murray, C
Streiter, I
Schulz, SE
Gessner, T
Zahn, DRT
Citation: C. Himcinschi et al., Characterization of silica xerogel films by variable-angle spectroscopic ellipsometry and infrared spectroscopy, SEMIC SCI T, 16(9), 2001, pp. 806-811
Authors:
Himcinschi, C
Milekhin, A
Friedrich, M
Hiller, K
Wiemer, M
Gessner, T
Schulze, S
Zahn, DRT
Citation: C. Himcinschi et al., Silicon oxide in Si-Si bonded wafers, APPL SURF S, 175, 2001, pp. 715-720
Authors:
Zhu, ZM
Xia, X
Streiter, R
Ruan, G
Otto, T
Wolf, H
Gessner, T
Citation: Zm. Zhu et al., Closed-form formulae for frequency-dependent 3-D interconnect inductance, MICROEL ENG, 56(3-4), 2001, pp. 359-370
Authors:
Schulz, SE
Koerner, H
Murray, C
Streiter, I
Gessner, T
Citation: Se. Schulz et al., Influence of barrier and cap layer deposition on the properties of capped and non-capped porous silicon oxide, MICROEL ENG, 55(1-4), 2001, pp. 45-52
Authors:
Xiao, X
Streiter, R
Wolf, H
Ruan, G
Murray, C
Gessner, T
Citation: X. Xiao et al., Simulation of the dielectric constant of aerogels and estimation of their water content, MICROEL ENG, 55(1-4), 2001, pp. 53-57
Authors:
Riedel, S
Schulz, SE
Baumann, J
Rennau, M
Gessner, T
Citation: S. Riedel et al., Influence of different treatment techniques on the barrier properties of MOCVD TiN against copper diffusion, MICROEL ENG, 55(1-4), 2001, pp. 213-218
Authors:
Schwalbe, G
Baumann, J
Kaufmann, C
Gessner, T
Koenigsmann, H
Bartzsch, A
Gilman, P
Citation: G. Schwalbe et al., Comparative study of Cu and CuAl0.3 wt.% films, MICROEL ENG, 55(1-4), 2001, pp. 341-348
Authors:
Richter, F
Kupfer, H
Schlott, P
Gessner, T
Kaufmann, C
Citation: F. Richter et al., Optical properties and mechanical stress in SiO2/Nb2O5 multilayers, THIN SOL FI, 389(1-2), 2001, pp. 278-283
Authors:
Himcinschi, C
Milekhin, A
Friedrich, M
Hiller, K
Wiemer, M
Gessner, T
Schulze, S
Zahn, DRT
Citation: C. Himcinschi et al., Growth of buried silicon oxide in Si-Si bonded wafers upon annealing, J APPL PHYS, 89(3), 2001, pp. 1992-1994
Authors:
Milekhin, A
Friedrich, M
Hiller, K
Wierner, M
Gessner, T
Zahn, DRT
Citation: A. Milekhin et al., Characterization of low-temperature wafer bonding by infrared spectroscopy, J VAC SCI B, 18(3), 2000, pp. 1392-1396
Authors:
Gessner, T
Gottfried, K
Hoffmann, R
Kaufmann, C
Weiss, U
Charetdinov, E
Hauptmann, P
Lucklum, R
Zimmermann, B
Dietel, U
Springer, G
Vogel, M
Citation: T. Gessner et al., Metal oxide gas sensor for high temperature application, MICROSYST T, 6(5), 2000, pp. 169-174
Authors:
Xiao, X
Streiter, R
Ruan, G
Song, R
Otto, T
Gessner, T
Citation: X. Xiao et al., Modelling and simulation for dielectric constant of aerogel, MICROEL ENG, 54(3-4), 2000, pp. 295-301
Authors:
Uhlig, M
Bertz, A
Rennau, M
Schulz, SE
Werner, T
Gessner, T
Citation: M. Uhlig et al., Electrical and adhesion properties of plasma-polymerised ultra-low k dielectric films with high thermal stability, MICROEL ENG, 50(1-4), 2000, pp. 7-14
Authors:
Markert, M
Bertz, A
Gessner, T
Ye, Y
Zhao, A
Ma, D
Citation: M. Markert et al., High throughput, high quality dry etching of copper/barrier film stacks, MICROEL ENG, 50(1-4), 2000, pp. 417-423
Authors:
Weiss, K
Riedel, S
Schulz, SE
Schwerd, M
Helneder, H
Wendt, H
Gessner, T
Citation: K. Weiss et al., Development of different copper seed layers with respect to the copper electroplating process, MICROEL ENG, 50(1-4), 2000, pp. 433-440
Authors:
Riedel, S
Schulz, SE
Gessner, T
Citation: S. Riedel et al., Investigation of the plasma treatment in a multistep TiN MOCVD process, MICROEL ENG, 50(1-4), 2000, pp. 533-540
Authors:
Bayer, R
Burghardt, H
Thurzo, I
Zahn, DRT
Gessner, T
Citation: R. Bayer et al., A deconvolution of the transient response of (100) Si/SiO2 semiconductor-insulator interface states according to small pulse excitation: evidence of different branches of charge transition, SOL ST ELEC, 44(8), 2000, pp. 1463-1470
Authors:
Milekhin, A
Friedrich, M
Hiller, K
Wiemer, M
Gessner, T
Zahn, DRT
Citation: A. Milekhin et al., Infrared study of Si surfaces and buried interfaces, J VAC SCI B, 17(4), 1999, pp. 1733-1737
Authors:
Milekhin, A
Friedrich, M
Hiller, K
Wiemer, M
Gessner, T
Zahn, DRT
Citation: A. Milekhin et al., Infrared study of Si surfaces and bonded Si wafers, SEMIC SCI T, 14(1), 1999, pp. 70-73
Authors:
Otto, T
Wolf, H
Streiter, R
Dehoff, A
Wandel, K
Gessner, T
Citation: T. Otto et al., Process and equipment simulation of dry silicon etching in the absence of ion bombardment, MICROEL ENG, 45(4), 1999, pp. 377-391
Authors:
Wolf, H
Rober, J
Riedel, S
Streiter, R
Gessner, T
Citation: H. Wolf et al., Process and equipment simulation of copper chemical vapor deposition usingCu(hfac)vtms, MICROEL ENG, 45(1), 1999, pp. 15-27
Authors:
Beyer, R
Burghardt, H
Thomas, E
Reich, R
Zahn, DRT
Gessner, T
Citation: R. Beyer et al., A study of the interface states in MIS-structures with thin SiO2 and SiOxNy layers using deep level transient spectroscopy, MICROEL REL, 39(2), 1999, pp. 297-302
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