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Results:
1-19
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Results: 19
Authors:
Vissel, B
Royle, GA
Christie, BR
Schiffer, HH
Ghetti, A
Tritto, T
Perez-Otano, I
Radcliffe, RA
Seamans, J
Sejnowski, T
Wehner, JM
Collins, AC
O'Gorman, S
Heinemann, SF
Citation: B. Vissel et al., The role of RNA editing of kainate receptors in synaptic plasticity and seizures, NEURON, 29(1), 2001, pp. 217-227
Authors:
Ghetti, A
Citation: A. Ghetti, Characterization and modeling of the tunneling current in Si-SiO2-Si structures with ultra-thin oxide layer, MICROEL ENG, 59(1-4), 2001, pp. 127-136
Authors:
Alam, A
Weir, B
Bude, J
Silverman, P
Ghetti, A
Citation: A. Alam et al., A computational model for oxide breakdown: theory and experiments, MICROEL ENG, 59(1-4), 2001, pp. 137-147
Authors:
Lamassa, M
Di Carlo, A
Pracucci, G
Basile, AM
Trefoloni, G
Vanni, P
Spolveri, S
Baruffi, MC
Landini, G
Ghetti, A
Wolfe, CDA
Inzitari, D
Citation: M. Lamassa et al., Characteristics, outcome, and care of stroke associated with atrial fibrillation in Europe - Data from a multicenter multinational hospital-based registry (the European Community Stroke Project), STROKE, 32(2), 2001, pp. 392-398
Authors:
Ghetti, A
Bude, J
Liu, CT
Citation: A. Ghetti et al., Insight into the relationship between hot electron degradation and substrate current in sub-0.1 mu m technologies, SOL ST ELEC, 45(9), 2001, pp. 1591-1595
Authors:
Ghetti, A
Alam, M
Bude, J
Citation: A. Ghetti et al., Anode hole generation mechanisms, MICROEL REL, 41(9-10), 2001, pp. 1347-1354
Authors:
Sakai, R
Swanson, GT
Shimamoto, K
Green, T
Contractor, A
Ghetti, A
Tamura-Horikawa, Y
Oiwa, C
Kamiya, H
Citation: R. Sakai et al., Pharmacological properties of the potent epileptogenic amino acid dysiherbaine, a novel glutamate receptor agonist isolated from the marine sponge Dysidea herbacea, J PHARM EXP, 296(2), 2001, pp. 650-658
Authors:
Ghetti, A
Bude, J
Weber, G
Citation: A. Ghetti et al., T-BD prediction from low-voltage near-interface trap-assisted tunneling current measurements, IEEE DEVICE, 48(7), 2001, pp. 1354-1359
Authors:
Ghetti, A
Bude, J
Silverman, P
Hamad, A
Vaidya, H
Citation: A. Ghetti et al., Modeling and simulation of tunneling current in MOS devices including quantum mechanical effects, IEICE TR EL, E83C(8), 2000, pp. 1175-1182
Authors:
Kamgar, A
Clemens, JT
Ghetti, A
Liu, CT
Lloyd, EJ
Citation: A. Kamgar et al., Reduced electron mobility due to nitrogen implant prior to the gate oxide growth, IEEE ELEC D, 21(5), 2000, pp. 227-229
Authors:
Ghetti, A
Heinemann, SF
Citation: A. Ghetti et Sf. Heinemann, NMDA-dependent modulation of hippocampal kainate receptors by calcineurin and Ca2+/calmodulin-dependent protein kinase, J NEUROSC, 20(8), 2000, pp. 2766-2773
Authors:
Weir, BE
Alam, MA
Bude, JD
Silverman, PJ
Ghetti, A
Baumann, F
Diodato, P
Monroe, D
Sorsch, T
Timp, GL
Ma, Y
Brown, MM
Hamad, A
Hwang, D
Mason, P
Citation: Be. Weir et al., Gate oxide reliability projection to the sub-2 nm regime, SEMIC SCI T, 15(5), 2000, pp. 455-461
Authors:
Ghetti, A
Liu, CT
Mastrapasqua, M
Sangiorgi, E
Citation: A. Ghetti et al., Characterization of tunneling current in ultra-thin gate oxide, SOL ST ELEC, 44(9), 2000, pp. 1523-1531
Authors:
Timp, G
Bude, J
Baumann, F
Bourdelle, KK
Boone, T
Garno, J
Ghetti, A
Green, M
Gossmann, H
Kim, Y
Kleiman, R
Kornblit, A
Klemens, F
Moccio, S
Muller, D
Rosamilia, J
Silverman, P
Sorsch, T
Timp, W
Tennant, D
Tung, R
Weir, B
Citation: G. Timp et al., The relentless march of the MOSFET gate oxide thickness to zero, MICROEL REL, 40(4-5), 2000, pp. 557-562
Authors:
Ghetti, A
Alam, M
Bude, J
Monroe, D
Sangiorgi, E
Vaidya, H
Citation: A. Ghetti et al., Stress induced leakage current analysis via quantum yield experiments, IEEE DEVICE, 47(7), 2000, pp. 1341-1348
Authors:
Ghetti, A
Sangiorgi, E
Bude, J
Sorsch, TW
Weber, G
Citation: A. Ghetti et al., Tunneling into interface states as reliability monitor for ultrathin oxides, IEEE DEVICE, 47(12), 2000, pp. 2358-2365
Authors:
Esseni, D
Selmi, L
Ghetti, A
Sangiorgi, E
Citation: D. Esseni et al., Injection efficiency of CHISEL gate currents in short MOS devices: Physical mechanisms, device implications, and sensitivity to technological parameters, IEEE DEVICE, 47(11), 2000, pp. 2194-2200
Authors:
Ghetti, A
Sangiorgi, E
Sorsch, TW
Kizilyalli, I
Citation: A. Ghetti et al., The role of native traps on the tunneling characteristics of ultra-thin (1.5-3 nm) oxides, MICROEL ENG, 48(1-4), 1999, pp. 31-34
Authors:
Ghetti, A
Selmi, L
Bez, RT
Citation: A. Ghetti et al., Low-voltage hot electrons and soft-programming lifetime prediction in nonvolatile memory cells, IEEE DEVICE, 46(4), 1999, pp. 696-702
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