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Results: 1-23 |
Results: 23

Authors: Leicht, SE Juristyarini, P Davison, RR Glover, CJ
Citation: Se. Leicht et al., An investigation of oxidative curing on the properties of high cure asphalt rubber, PET SCI TEC, 19(3-4), 2001, pp. 317-334

Authors: Glover, CJ Ridgway, MC Yu, KM Foran, GJ Clerc, C Hansen, JL Nylandsted-Larsen, A
Citation: Cj. Glover et al., Structure and low- temperature thermal relaxation of ion- implanted germanium, J SYNCHROTR, 8, 2001, pp. 773-775

Authors: Vassiliev, NY Davison, RR Williamson, SA Glover, CJ
Citation: Ny. Vassiliev et al., Air blowing of supercritical asphalt fractions, IND ENG RES, 40(7), 2001, pp. 1773-1780

Authors: Chipps, JF Davison, RR Glover, CJ
Citation: Jf. Chipps et al., A model for oxidative aging of rubber-modified asphalts and implications to performance analysis, ENERG FUEL, 15(3), 2001, pp. 637-647

Authors: Desnica-Frankovic, ID Furic, K Desnica, UV Ridgway, MC Glover, CJ
Citation: Id. Desnica-frankovic et al., Structural modifications in amorphous Ge produced by ion implantation, NUCL INST B, 178, 2001, pp. 192-195

Authors: Ridgway, MC Glover, CJ Desnica-Frankovic, ID Furic, K Yu, KM Foran, GJ Clerc, C Hansen, JL Larsen, AN
Citation: Mc. Ridgway et al., Implantation-induced disorder in amorphous Ge: Production and relaxation, NUCL INST B, 175, 2001, pp. 21-25

Authors: Glover, CJ Byrne, AP Ridgway, MC
Citation: Cj. Glover et al., Irradiation-induced defect configurations in Ge substrates characterised with perturbed angular correlation, NUCL INST B, 175, 2001, pp. 51-55

Authors: Ridgway, MC Glover, CJ Yu, KM Foran, GJ Lee, TW Moon, Y Yoon, E
Citation: Mc. Ridgway et al., Structural characterisation of amorphised compound semiconductors, NUCL INST B, 175, 2001, pp. 280-285

Authors: Glover, CJ Ridgway, MC Yu, KM Foran, GJ Desnica-Frankovic, D Clerc, C Hansen, JL Nylandsted-Larsen, A
Citation: Cj. Glover et al., Structural-relaxation-induced bond length and bond angle changes in amorphized Ge - art. no. 073204, PHYS REV B, 6307(7), 2001, pp. 3204

Authors: Madrid, RC Davison, RR Glover, CJ
Citation: Rc. Madrid et al., Compositional evaluation of asphalt binder recycling agents, PET SCI TEC, 18(1-2), 2000, pp. 153-175

Authors: Domke, CH Davison, RR Glover, CJ
Citation: Ch. Domke et al., Effect of oxygen pressure on asphalt oxidation kinetics, IND ENG RES, 39(3), 2000, pp. 592-598

Authors: Glover, CJ Ridgway, MC Byrne, AP Yu, KM Foran, GJ Clerc, C Hansen, JL Larsen, AN
Citation: Cj. Glover et al., Micro- and macro-structure of implantation-induced disorder in Ge, NUCL INST B, 161, 2000, pp. 1033-1037

Authors: Ridgway, MC Glover, CJ Yu, KM Foran, GJ Clerc, C Hansen, JL Larsen, AN
Citation: Mc. Ridgway et al., Ion-dose-dependent microstructure in amorphous Ge, PHYS REV B, 61(19), 2000, pp. 12586-12589

Authors: Glover, CJ Yu, KM Ridgway, MC Foran, GJ
Citation: Cj. Glover et al., Characterisation of ion-implantation-induced disorder in GaAs by EXAFS, JPN J A P 1, 38, 1999, pp. 548-551

Authors: Domke, CH Davison, RR Glover, CJ
Citation: Ch. Domke et al., Effect of asphaltenes on SHRP superpave specifications, ENERG FUEL, 13(2), 1999, pp. 340-345

Authors: Ridgway, MC Glover, CJ Bezakova, E Byrne, AP Foran, GJ Yu, KM
Citation: Mc. Ridgway et al., Atomic-level characterisation of ion-induced amorphisation in compound semiconductors, NUCL INST B, 148(1-4), 1999, pp. 391-395

Authors: Ridgway, MC Glover, CJ Foran, GJ Yu, KM
Citation: Mc. Ridgway et al., Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements, NUCL INST B, 147(1-4), 1999, pp. 148-154

Authors: Ridgway, MC Yu, KM Glover, CJ Foran, GJ Clerc, C Hansen, JL Larsen, AN
Citation: Mc. Ridgway et al., Composition-dependent bond lengths in crystalline and amorphized GexSi1-x alloys, PHYS REV B, 60(15), 1999, pp. 10831-10836

Authors: Yu, KM Shan, W Glover, CJ Ridgway, MC Wong, WS Yang, W
Citation: Km. Yu et al., Local structures of free-standing AlxGa1-xN thin films studied by extendedx-ray absorption fine structure, APPL PHYS L, 75(26), 1999, pp. 4097-4099

Authors: Yu, KM Walukiewicz, W Muto, S Jin, HC Abelson, JR Clerc, C Glover, CJ Ridgway, MC
Citation: Km. Yu et al., Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron x-ray irradiation, APPL PHYS L, 75(21), 1999, pp. 3282-3284

Authors: Bezakova, E Byrne, AP Glover, CJ Ridgway, MC Vianden, R
Citation: E. Bezakova et al., Implantation-induced amorphization of InP characterized with perturbed angular correlation, APPL PHYS L, 75(13), 1999, pp. 1923-1925

Authors: Glover, CJ Ridgway, MC Yu, KM Foran, GJ Lee, TW Moon, Y Yoon, E
Citation: Cj. Glover et al., Structural characterization of amorphized InP: Evidence for chemical disorder, APPL PHYS L, 74(12), 1999, pp. 1713-1715

Authors: Liu, M Ferry, MA Davison, RR Glover, CJ Bullin, JA
Citation: M. Liu et al., Oxygen uptake as correlated to carbonyl growth in aged asphalts and asphalt Corbett fractions, IND ENG RES, 37(12), 1998, pp. 4669-4674
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