Authors: Golikova, EG Gorbylev, VA Il'in, YV Kureshov, VA Leshko, AY Lyutetskii, AV Pikhtin, NA Ryaboshtan, YA Simakov, VA Tarasov, IS Tret'yakova, EA Fetisova, NV

Citation: Eg. Golikova et al., Mesastripe single-mode separately bounded lasers based on InGaAsP/InP heterostructures obtained by VPE of organometallic compounds, TECH PHYS L, 26(4), 2000, pp. 295-297

Authors: Golikova, EG Gorbylev, VA Davidyuk, NY Kureshov, VA Leshko, AY Lyutetskii, AV Pikhtin, NA Ryaboshtan, YA Simakov, VA Tarasov, IS Fetisova, NV

Citation: Eg. Golikova et al., Separately bounded InGaAsP high-power laser heterostructures obtained by VPE of organometallic compounds, TECH PHYS L, 26(3), 2000, pp. 225-227

Authors: Golikova, EG Kureshov, VA Leshko, AY Livshits, DA Lyutetskii, AV Nikolaev, DN Pikhtin, NA Ryaboshtan, YA Slipchenko, SO Tarasov, IS Fetisova, NV

Citation: Eg. Golikova et al., The properties of InGaAsP/InP heterolasers with step-divergent waveguides, TECH PHYS L, 26(10), 2000, pp. 913-915

Authors: Golikova, EG Kureshov, VA Leshko, AY Lyutetskii, AV Pikhtin, NA Ryaboshtan, YA Skrynnikov, GA Tarasov, IS Alferov, ZI

Citation: Eg. Golikova et al., Properties of wide-mesastripe InGaAsP/InP lasers, SEMICONDUCT, 34(7), 2000, pp. 853-856