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Results: 1-25 | 26-29
Results: 1-25/29
Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates
Authors: Lubyshev, D Liu, WK Stewart, TR Cornfeld, AB Fang, XM Xu, X Specht, P Kisielowski, C Naidenkova, M Goorsky, MS Whelan, CS Hoke, WE Marsh, PF Millunchick, JM Svensson, SP
Citation: D. Lubyshev et al., Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates, J VAC SCI B, 19(4), 2001, pp. 1510-1514
Misfit dislocation interactions in low mismatch p/p(+) Si
Authors: Feichtinger, P Poust, B Goorsky, MS Oster, D Chambers, J Moreland, J
Citation: P. Feichtinger et al., Misfit dislocation interactions in low mismatch p/p(+) Si, J PHYS D, 34(10A), 2001, pp. A128-A132
High-quality strain-relaxed SiGe films grown with low temperature Si buffer
Authors: Luo, YH Wan, J Forrest, RL Liu, JL Goorsky, MS Wang, KL
Citation: Yh. Luo et al., High-quality strain-relaxed SiGe films grown with low temperature Si buffer, J APPL PHYS, 89(12), 2001, pp. 8279-8283
Dislocation nucleation study in p/p(+) silicon
Authors: Feichtinger, P Goorsky, MS Oster, D D'Silva, T Moreland, J
Citation: P. Feichtinger et al., Dislocation nucleation study in p/p(+) silicon, J ELCHEM SO, 148(7), 2001, pp. G379-G382
Effective compliant substrate for low-dislocation relaxed SiGe growth
Authors: Luo, YH Liu, JL Jin, G Wan, J Wang, KL Moore, CD Goorsky, MS Chih, C Tu, KN
Citation: Yh. Luo et al., Effective compliant substrate for low-dislocation relaxed SiGe growth, APPL PHYS L, 78(9), 2001, pp. 1219-1221
Compliant effect of low-temperature Si buffer for SiGe growth
Authors: Luo, YH Wan, J Forrest, RL Liu, JL Jin, G Goorsky, MS Wang, KL
Citation: Yh. Luo et al., Compliant effect of low-temperature Si buffer for SiGe growth, APPL PHYS L, 78(4), 2001, pp. 454-456
Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers
Authors: Goorsky, MS Sandhu, R Hsing, R Naidenkova, M Wojtowicz, M Chin, TP Block, TR Streit, DC
Citation: Ms. Goorsky et al., Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers, J VAC SCI B, 18(3), 2000, pp. 1658-1662
Synthesis of nanoporous bismuth films by liquid-phase deposition
Authors: Shen, WN Dunn, B Moore, CD Goorsky, MS Radetic, T Gronsky, R
Citation: Wn. Shen et al., Synthesis of nanoporous bismuth films by liquid-phase deposition, J MAT CHEM, 10(3), 2000, pp. 657-662
Thermal conductivity of symmetrically strained Si/Ge superlattices
Authors: Borca-Tasciuc, T Liu, WL Liu, JL Zeng, TF Song, DW Moore, CD Chen, G Wang, KL Goorsky, MS Radetic, T Gronsky, R Koga, T Dresselhaus, MS
Citation: T. Borca-tasciuc et al., Thermal conductivity of symmetrically strained Si/Ge superlattices, SUPERLATT M, 28(3), 2000, pp. 199-206
Reciprocal space mapping of ordered domains in InxGa1-xP
Authors: Hess, RR Moore, CD Forrest, RL Nielsen, RT Goorsky, MS
Citation: Rr. Hess et al., Reciprocal space mapping of ordered domains in InxGa1-xP, J ELEC MAT, 29(9), 2000, pp. 1063-1066
Low-dislocation relaxed SiGe grown on an effective compliant substrate
Authors: Luo, YH Liu, JL Jin, G Wang, KL Moore, CD Goorsky, MS Chih, C Tu, KN
Citation: Yh. Luo et al., Low-dislocation relaxed SiGe grown on an effective compliant substrate, J ELEC MAT, 29(7), 2000, pp. 950-955
Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe
Authors: Lam, TT Moore, CD Forrest, RL Goorsky, MS Johnson, SM Leonard, DB Strand, TA Delyon, TJ Gorwitz, MD
Citation: Tt. Lam et al., Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe, J ELEC MAT, 29(6), 2000, pp. 804-808
Overgrowth of submicron-patterned surfaces for buried index contrast devices
Authors: Koontz, EM Petrich, GS Kolodziejski, LA Goorsky, MS
Citation: Em. Koontz et al., Overgrowth of submicron-patterned surfaces for buried index contrast devices, SEMIC SCI T, 15(4), 2000, pp. R1-R12
Experimental study of a surfactant-assisted SiGe graded layer and a symmetrically strained Si/Ge superlattice for thermoelectric applications
Authors: Liu, JL Wang, KL Moore, CD Goorsky, MS Borca-Tasciuc, T Chen, G
Citation: Jl. Liu et al., Experimental study of a surfactant-assisted SiGe graded layer and a symmetrically strained Si/Ge superlattice for thermoelectric applications, THIN SOL FI, 369(1-2), 2000, pp. 121-125
Influence of misfit strain on {311} facet development in selective epitaxial growth of Si1-xGex/Si(100) grown by gas-source molecular beam epitaxy
Authors: U'Ren, GD Goorsky, MS Wang, KL
Citation: Gd. U'Ren et al., Influence of misfit strain on {311} facet development in selective epitaxial growth of Si1-xGex/Si(100) grown by gas-source molecular beam epitaxy, THIN SOL FI, 365(1), 2000, pp. 147-150
Misfit dislocation formation in p/p(+) silicon vapor-phase epitaxy
Authors: Fukuto, H Feichtinger, P U'Ren, GD Lindo, S Goorsky, MS Magee, T Oster, D Moreland, J
Citation: H. Fukuto et al., Misfit dislocation formation in p/p(+) silicon vapor-phase epitaxy, J CRYST GR, 209(4), 2000, pp. 716-723
Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation
Authors: Chen, TH Huang, YS Lin, DY Pollak, FH Goorsky, MS Streit, DC Wojtowicz, M
Citation: Th. Chen et al., Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation, J APPL PHYS, 88(2), 2000, pp. 883-888
High-quality strain-relaxed SiGe alloy grown on implanted silicon-on-insulator substrate
Authors: Huang, FY Chu, MA Tanner, MO Wang, KL U'Ren, GD Goorsky, MS
Citation: Fy. Huang et al., High-quality strain-relaxed SiGe alloy grown on implanted silicon-on-insulator substrate, APPL PHYS L, 76(19), 2000, pp. 2680-2682
X-ray topography and diffraction studies of misfit dislocation nucleation in Si-based structures
Authors: Goorsky, MS Feichtinger, P Fukuto, H U'Ren, G
Citation: Ms. Goorsky et al., X-ray topography and diffraction studies of misfit dislocation nucleation in Si-based structures, PHI T ROY A, 357(1761), 1999, pp. 2777-2788
Comparison of strained channel InGaAs high electron mobility structures grown on InP and GaAs
Authors: Sandhu, RS Bhasin, G Moore, CD U'Ren, GD Goorsky, MS Chin, TP Wojtowicz, M Block, TR Streit, DC
Citation: Rs. Sandhu et al., Comparison of strained channel InGaAs high electron mobility structures grown on InP and GaAs, J VAC SCI B, 17(3), 1999, pp. 1163-1166
Growth and characterization of epitaxial FexAl1-x/(In,Al)As/InP and III-V/FexAl1-x/(In,Al)As/InP structures
Authors: Sacks, RN Qin, L Jazwiecki, M Ringel, SA Clevenger, MB Wilt, D Goorsky, MS
Citation: Rn. Sacks et al., Growth and characterization of epitaxial FexAl1-x/(In,Al)As/InP and III-V/FexAl1-x/(In,Al)As/InP structures, J VAC SCI B, 17(3), 1999, pp. 1289-1293
Analysis of CZT crystals and detectors grown in Russia and the Ukraine by high-pressure Bridgman methods
Authors: Hermon, H Schieber, M James, RB Lee, EY Yang, N Antolak, AJ Morse, DH Hackett, C Tarver, E Kolesnikov, NNP Ivanov, YN Komar, V Goorsky, MS Yoon, H
Citation: H. Hermon et al., Analysis of CZT crystals and detectors grown in Russia and the Ukraine by high-pressure Bridgman methods, J ELEC MAT, 28(6), 1999, pp. 688-694
Resistivity variation of semi-insulating Cd1-xZnxTe in relationship to alloy composition
Authors: Yoon, H Goorsky, MS Brunett, BA Van Scyoc, JM Lund, JC James, RB
Citation: H. Yoon et al., Resistivity variation of semi-insulating Cd1-xZnxTe in relationship to alloy composition, J ELEC MAT, 28(6), 1999, pp. 838-842
Evaluation of CZT crystals from the former Soviet Union
Authors: Hermon, H Schieber, M James, RB Antolak, AJ Morse, DH Brunett, B Hackett, C Tarver, E Komar, V Goorsky, MS Yoon, H Kolesnikov, NN Toney, J Schlesinger, TE
Citation: H. Hermon et al., Evaluation of CZT crystals from the former Soviet Union, NUCL INST A, 428(1), 1999, pp. 30-37
Asymmetry of misfit-dislocation induced satellite peaks in semiconductor heterostructures
Authors: Leininger, J U'Ren, GD Moore, CD Sandhu, R Goorsky, MS
Citation: J. Leininger et al., Asymmetry of misfit-dislocation induced satellite peaks in semiconductor heterostructures, J PHYS D, 32(10A), 1999, pp. A8-A11
Risultati: 1-25 | 26-29