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Results:
1-8
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Results: 8
Authors:
Cassette, S
Delage, SL
Chartier, E
Floriot, D
Poisson, MA
Garcia, JC
Grattepain, C
Arroyo, JM
Plana, R
Bland, SW
Citation: S. Cassette et al., Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability, MAT SCI E B, 80(1-3), 2001, pp. 279-283
Authors:
Lacoste, A
Le Coeur, F
Arnal, Y
Pelletier, J
Grattepain, C
Citation: A. Lacoste et al., PBII processing of dielectric layers: physical aspects limitations and experimental results, SURF COAT, 135(2-3), 2001, pp. 268-273
Authors:
Chirlias, E
Massies, J
Marcadet, X
Guyaux, JL
Grattepain, C
Citation: E. Chirlias et al., In situ etching at InGaAs/GaAs quantum well interfaces, J CRYST GR, 222(3), 2001, pp. 471-476
Authors:
Gandouzi, M
Bourgoin, JC
Mimila-Arroyo, J
Grattepain, C
Grattepain, C
Citation: M. Gandouzi et al., Impurity incorporation during epitaxial growth of GaAs by chemical reaction, J CRYST GR, 218(2-4), 2000, pp. 167-172
Authors:
Mosser, V
Callen, O
Kobbi, F
Adam, D
Grattepain, C
Draidia, N
Citation: V. Mosser et al., New methods for the characterization of surface states density and substrate/epilayer interface states in pseudomorphic AlGaAs/InGaAs/GaAs heterostructures, MAT SCI E B, 66(1-3), 1999, pp. 157-161
Authors:
Kappers, M
Guyaux, JL
Olivier, J
Bisaro, R
Grattepain, C
Garcia, JC
Citation: M. Kappers et al., Chemical beam epitaxy of GaN on (0001) sapphire substrate, MAT SCI E B, 59(1-3), 1999, pp. 52-55
Authors:
Binet, F
Duboz, JY
Grattepain, C
Scholz, F
Off, J
Citation: F. Binet et al., Carrier capture in InGaN quantum wells and hot carrier effects in GaN, MAT SCI E B, 59(1-3), 1999, pp. 323-329
Authors:
Arnoult, A
Ferrand, D
Huard, V
Cibert, J
Grattepain, C
Saminadayar, K
Bourgognon, C
Wasiela, A
Tatarenko, S
Citation: A. Arnoult et al., n- and p-type modulation doping of Te related semimagnetic II-VI heterostructures, J CRYST GR, 202, 1999, pp. 715-718
Risultati:
1-8
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