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Results: 1-10 |
Results: 10
CISCuT absorber layers - the present model of thin film growth
Authors: Winkler, M Griesche, J Tober, O Penndorf, J Blechschmied, E Szulzewsky, K
Citation: M. Winkler et al., CISCuT absorber layers - the present model of thin film growth, THIN SOL FI, 387(1-2), 2001, pp. 86-88
In search of optimum conditions for the growth of sharp and shallow B-delta markers in Si by molecular beam epitaxy
Authors: Wittmaack, K Griesche, J Osten, HJ Patel, SB
Citation: K. Wittmaack et al., In search of optimum conditions for the growth of sharp and shallow B-delta markers in Si by molecular beam epitaxy, J VAC SCI B, 18(1), 2000, pp. 524-528
Thin films of CoSi2 on Si1-yCy substrate layers
Authors: Teichert, S Falke, M Giesler, H Sarkar, DK Beddies, G Hinneberg, HJ Lippert, G Griesche, J Osten, HJ
Citation: S. Teichert et al., Thin films of CoSi2 on Si1-yCy substrate layers, MICROEL ENG, 50(1-4), 2000, pp. 193-197
Investigations on the growth mechanism of wide-gap II-VI semiconductors bymeans of reflection high energy electron diffraction
Authors: Griesche, J
Citation: J. Griesche, Investigations on the growth mechanism of wide-gap II-VI semiconductors bymeans of reflection high energy electron diffraction, THIN SOL FI, 367(1-2), 2000, pp. 159-164
Influence of interstitial carbon defects on electron transport in strainedSi1-yCy layers on Si(001)
Authors: Osten, HJ Griesche, J Gaworzewski, P Bolze, KD
Citation: Hj. Osten et al., Influence of interstitial carbon defects on electron transport in strainedSi1-yCy layers on Si(001), APPL PHYS L, 76(2), 2000, pp. 200-202
Stability and transport properties of microcrystalline Si1-xGex films
Authors: Edelman, F Raz, T Komem, Y Stolzer, M Werner, P Zaumseil, P Osten, HJ Griesche, J Capitan, M
Citation: F. Edelman et al., Stability and transport properties of microcrystalline Si1-xGex films, THIN SOL FI, 337(1-2), 1999, pp. 152-157
Silicide reaction of Co with Si0.999C0.001
Authors: Teichert, S Falke, M Giesler, H Beddies, G Hinneberg, HJ Lippert, G Griesche, J Osten, HJ
Citation: S. Teichert et al., Silicide reaction of Co with Si0.999C0.001, SOL ST ELEC, 43(6), 1999, pp. 1051-1054
Reflection high-energy electron diffraction (RHEED) oscillations in phase-locked epitaxy of ZnSe
Authors: Griesche, J Jacobs, K
Citation: J. Griesche et K. Jacobs, Reflection high-energy electron diffraction (RHEED) oscillations in phase-locked epitaxy of ZnSe, J CRYST GR, 203(1-2), 1999, pp. 45-50
Substitutional carbon incorporation in epitaxial Si1-yCy alloys on Si(001)grown by molecular beam epitaxy
Authors: Osten, HJ Griesche, J Scalese, S
Citation: Hj. Osten et al., Substitutional carbon incorporation in epitaxial Si1-yCy alloys on Si(001)grown by molecular beam epitaxy, APPL PHYS L, 74(6), 1999, pp. 836-838
Developments in the use of RHEED for interpreting growth processes in the MBE of wide gap II-VI semiconductors
Authors: Griesche, J Hoffmann, N Rabe, M Jacobs, K
Citation: J. Griesche et al., Developments in the use of RHEED for interpreting growth processes in the MBE of wide gap II-VI semiconductors, PROG CRYST, 37(2-3), 1998, pp. 103-121
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