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Results: 1-10 |
Results: 10
In situ etching at InGaAs/GaAs quantum well interfaces
Authors: Chirlias, E Massies, J Marcadet, X Guyaux, JL Grattepain, C
Citation: E. Chirlias et al., In situ etching at InGaAs/GaAs quantum well interfaces, J CRYST GR, 222(3), 2001, pp. 471-476
Improved emitter transit time using AlGaAs-GaInP composite emitter in GaInP/GaAs heterojunction bipolar transistors
Authors: Park, JW Pavlidis, D Mohammadi, S Guyaux, JL Garcia, JC
Citation: Jw. Park et al., Improved emitter transit time using AlGaAs-GaInP composite emitter in GaInP/GaAs heterojunction bipolar transistors, IEEE DEVICE, 48(7), 2001, pp. 1297-1303
Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology
Authors: Park, JW Mohammadi, S Pavlidis, D Dua, C Guyaux, JL Garcia, JC
Citation: Jw. Park et al., Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology, SOL ST ELEC, 44(11), 2000, pp. 2059-2067
Design optimization and characterization of high-gain GaInP/GaAs HBT distributed amplifiers for high-bit-rate telecommunication
Authors: Mohammadi, S Park, JW Pavlidis, D Guyaux, JL Garcia, JC
Citation: S. Mohammadi et al., Design optimization and characterization of high-gain GaInP/GaAs HBT distributed amplifiers for high-bit-rate telecommunication, IEEE MICR T, 48(6), 2000, pp. 1038-1044
A new preparation process of GaN: solvothermal synthesis.
Authors: Collado, C Demazeau, G Berdeau, B Largeteau, A Garcia, JC Guyaux, JL Massies, J
Citation: C. Collado et al., A new preparation process of GaN: solvothermal synthesis., CR AC S IIC, 2(9-10), 1999, pp. 483-485
Chemical beam epitaxy of GaN on (0001) sapphire substrate
Authors: Kappers, M Guyaux, JL Olivier, J Bisaro, R Grattepain, C Garcia, JC
Citation: M. Kappers et al., Chemical beam epitaxy of GaN on (0001) sapphire substrate, MAT SCI E B, 59(1-3), 1999, pp. 52-55
Doping of GSMBE-grown gallium nitride using silane
Authors: Kappers, M Guyaux, JL Garcia, JC
Citation: M. Kappers et al., Doping of GSMBE-grown gallium nitride using silane, PHYS ST S-B, 216(1), 1999, pp. 615-618
Kinetics of AsCl3 chemical beam etching of GaAs(001), (111)A and (111)B surfaces
Authors: Guyaux, JL Ortion, JM Cordier, Y Kappers, M Chirlias, E Garcia, JC
Citation: Jl. Guyaux et al., Kinetics of AsCl3 chemical beam etching of GaAs(001), (111)A and (111)B surfaces, J CRYST GR, 202, 1999, pp. 614-618
Epitaxially stacked GaAs GaAlAs lasers using a low-resistance tunnel junction
Authors: Garcia, JC Rosencher, E Collot, P Laurent, N Guyaux, JL Nagle, J Chirlias, E
Citation: Jc. Garcia et al., Epitaxially stacked GaAs GaAlAs lasers using a low-resistance tunnel junction, J CRYST GR, 202, 1999, pp. 891-895
An efficient way to improve compositional abruptness at the GaAs on GaInAsinterface
Authors: Chirlias, E Massies, J Guyaux, JL Moisan, H Garcia, JC
Citation: E. Chirlias et al., An efficient way to improve compositional abruptness at the GaAs on GaInAsinterface, APPL PHYS L, 74(26), 1999, pp. 3972-3974
Risultati: 1-10 |