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Results:
1-14
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Results: 14
Authors:
Gwo, S
Wu, CL
Chien, FSS
Yasuda, T
Yamasaki, S
Citation: S. Gwo et al., Scanning probe microscopy and lithography of ultrathin Si3N4 films grown on Si(111) and Si(001), JPN J A P 1, 40(6B), 2001, pp. 4368-4372
Authors:
Gwo, S
Yasuda, T
Yamasaki, S
Citation: S. Gwo et al., Selective-area chemical-vapor deposition of Si using a bilayer dielectric mask patterned by proximal probe oxidation, J VAC SCI A, 19(4), 2001, pp. 1806-1811
Authors:
Gwo, S
Huang, SY
Yang, TR
Citation: S. Gwo et al., Enhancement of the direct optical transition in nanocrystallized GaAsN alloys - art. no. 113312, PHYS REV B, 6411(11), 2001, pp. 3312
Authors:
Berg, M
DeWitt-Morette, C
Gwo, S
Kramer, E
Citation: M. Berg et al., The pin groups in physics: C, P and T, REV MATH PH, 13(8), 2001, pp. 953-1034
Authors:
Ahn, H
Wu, CL
Gwo, S
Wei, CM
Chou, YC
Citation: H. Ahn et al., Structure determination of the Si3N4/Si(111)-(8 x 8) surface: A combined study of Kikuchi electron holography, scanning tunneling microscopy, and ab initio calculations, PHYS REV L, 86(13), 2001, pp. 2818-2821
Authors:
Gwo, S
Citation: S. Gwo, Scanning probe oxidation of Si3N4 masks for nanoscale lithography, micromachining, and selective epitaxial growth on silicon, J PHYS CH S, 62(9-10), 2001, pp. 1673-1687
Authors:
Chien, FSS
Chou, YC
Chen, TT
Hsieh, WF
Chao, TS
Gwo, S
Citation: Fss. Chien et al., Nano-oxidation of silicon nitride films with an atomic force microscope: Chemical mapping, kinetics, and applications, J APPL PHYS, 89(4), 2001, pp. 2465-2472
Authors:
Klauser, R
Hong, IH
Su, HJ
Chen, TT
Gwo, S
Wang, SC
Chuang, TJ
Gritsenko, VA
Citation: R. Klauser et al., Oxidation states in scanning-probe-induced Si3N4 to SiOx conversion studied by scanning photoemission microscopy, APPL PHYS L, 79(19), 2001, pp. 3143-3145
Authors:
Yasuda, T
Yamasaki, S
Gwo, S
Citation: T. Yasuda et al., Nanoscale selective-area epitaxial growth of Si using an ultrathin SiO2/Si3Ni4 mask patterned by an atomic force microscope, APPL PHYS L, 77(24), 2000, pp. 3917-3919
Authors:
Chien, FSS
Chang, JW
Lin, SW
Chou, YC
Chen, TT
Gwo, S
Chao, TS
Hsieh, WF
Citation: Fss. Chien et al., Nanometer-scale conversion of Si3N4 to SiOx, APPL PHYS L, 76(3), 2000, pp. 360-362
Authors:
Wu, YH
Chen, WJ
Chang, SL
Chin, A
Gwo, S
Tsai, C
Citation: Yh. Wu et al., Improved electrical characteristics of CoSi2 using HF-vapor pretreatment, IEEE ELEC D, 20(7), 1999, pp. 320-322
Authors:
Wu, YH
Chen, WJ
Chang, SL
Chin, A
Gwo, S
Tsai, C
Citation: Yh. Wu et al., Improved electrical characteristics of CoSi2 using HF-vapor pretreatment, IEEE ELEC D, 20(5), 1999, pp. 200-202
Authors:
Chien, FSS
Wu, CL
Chou, YC
Chen, TT
Gwo, S
Hsieh, WF
Citation: Fss. Chien et al., Nanomachining of (110)-oriented silicon by scanning probe lithography and anisotropic wet etching, APPL PHYS L, 75(16), 1999, pp. 2429-2431
Authors:
Gwo, S
Yeh, CL
Chen, PF
Chou, YC
Chen, TT
Chao, TS
Hu, SF
Huang, TY
Citation: S. Gwo et al., Local electric-field-induced oxidation of titanium nitride films, APPL PHYS L, 74(8), 1999, pp. 1090-1092
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