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Results: 1-23 |
Results: 23
DEVICE CHARACTERISTICS OF GREEN II-VI SEMICONDUCTOR-LASERS
Authors: BUIJS M HABERERN KW MARSHALL T GAINES JM LAW KK BAUDE PF MILLER TJ HAASE MA HAUGEN GM
Citation: M. Buijs et al., DEVICE CHARACTERISTICS OF GREEN II-VI SEMICONDUCTOR-LASERS, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 49-54
STARK-EFFECT ON ABSORPTION OF CDZNSSE-ZNSSE QUANTUM-WELLS
Authors: LAW KK SMEKALIN K HAUGEN GM UREN GD HAASE MA
Citation: Kk. Law et al., STARK-EFFECT ON ABSORPTION OF CDZNSSE-ZNSSE QUANTUM-WELLS, IEEE photonics technology letters, 8(2), 1996, pp. 263-265
ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF BLUE-GREEN CDZNSSE ZNSSE QUANTUM-WELL LASER-DIODES/
Authors: LAW KK BAUDE PF MILLER TJ HAASE MA HAUGEN GM SMEKALIN K
Citation: Kk. Law et al., ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF BLUE-GREEN CDZNSSE ZNSSE QUANTUM-WELL LASER-DIODES/, Electronics Letters, 32(4), 1996, pp. 345-346
DEPENDENCE OF LIFETIME OF II-VI SEMICONDUCTOR-LASERS ON OUTPUT POWER FOR DIFFERENT MOUNTING CONFIGURATIONS
Authors: BUIJS M HABERERN K MARSHALL T LAW KK BAUDE PF MILLER TJ HAASE MA HAUGEN GM HORIKX J
Citation: M. Buijs et al., DEPENDENCE OF LIFETIME OF II-VI SEMICONDUCTOR-LASERS ON OUTPUT POWER FOR DIFFERENT MOUNTING CONFIGURATIONS, Electronics Letters, 32(14), 1996, pp. 1290-1291
GROWTH AND CHARACTERIZATION OF II-VI BLUE-LIGHT-EMITTING DIODES USINGSHORT-PERIOD SUPERLATTICES
Authors: WU BJ KUO LH DEPUYDT JM HAUGEN GM HAASE MA SALAMANCARIBA L
Citation: Bj. Wu et al., GROWTH AND CHARACTERIZATION OF II-VI BLUE-LIGHT-EMITTING DIODES USINGSHORT-PERIOD SUPERLATTICES, Applied physics letters, 68(3), 1996, pp. 379-381
CONDUCTION-BAND OFFSETS IN CDZNSSE ZNSSE SINGLE QUANTUM-WELLS MEASURED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/
Authors: BAUDE PF HAASE MA HAUGEN GM LAW KK MILLER TJ SMEKALIN K PHILLIPS J BHATTACHARYA P
Citation: Pf. Baude et al., CONDUCTION-BAND OFFSETS IN CDZNSSE ZNSSE SINGLE QUANTUM-WELLS MEASURED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Applied physics letters, 68(25), 1996, pp. 3591-3593
ELECTRICAL-PROPERTIES OF SCHOTTKY CONTACTS TO N-TYPE ZNS0.07SE0.93 EPILAYERS
Authors: WANG AZ ANDERSON WA HAASE MA
Citation: Az. Wang et al., ELECTRICAL-PROPERTIES OF SCHOTTKY CONTACTS TO N-TYPE ZNS0.07SE0.93 EPILAYERS, Journal of applied physics, 77(7), 1995, pp. 3513-3517
SHORT-PERIOD SUPERLATTICE II-VI BLUE-LIGHT-EMITTING DIODES
Authors: WU BJ DEPUYDT JM HAUGEN GM HAASE MA
Citation: Bj. Wu et al., SHORT-PERIOD SUPERLATTICE II-VI BLUE-LIGHT-EMITTING DIODES, Electronics Letters, 31(12), 1995, pp. 1015-1016
TRANSMISSION ELECTRON-MICROSCOPY OF (100) DARK LINE DEFECTS IN CDZNSEQUANTUM-WELL STRUCTURES
Authors: UREN GD HAUGEN GM BAUDE PF HAASE MA LAW KK MILLER TJ WU BJ
Citation: Gd. Uren et al., TRANSMISSION ELECTRON-MICROSCOPY OF (100) DARK LINE DEFECTS IN CDZNSEQUANTUM-WELL STRUCTURES, Applied physics letters, 67(26), 1995, pp. 3862-3864
PHOTODEGRADATION OF CDXZN1-XSE QUANTUM-WELLS
Authors: HAUGEN GM GUHA S CHENG H DEPUYDT JM HAASE MA HOFLER GE QIU J WU BJ
Citation: Gm. Haugen et al., PHOTODEGRADATION OF CDXZN1-XSE QUANTUM-WELLS, Applied physics letters, 66(3), 1995, pp. 358-360
WIDE-BAND GAP MGZNSSE GROWN ON (001) GAAS BY MOLECULAR-BEAM EPITAXY
Authors: WU BJ DEPUYDT JM HAUGEN GM HOFLER GE HAASE MA CHENG H GUHA S QIU J KUO LH SALAMANCARIBA L
Citation: Bj. Wu et al., WIDE-BAND GAP MGZNSSE GROWN ON (001) GAAS BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 66(25), 1995, pp. 3462-3464
FAILURE MECHANISMS IN II-VI BLUE-GREEN EMITTERS
Authors: GUHA S CHENG H DEPUYDT JM HAASE MA QIU J
Citation: S. Guha et al., FAILURE MECHANISMS IN II-VI BLUE-GREEN EMITTERS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 29-35
ROOM-TEMPERATURE II-VI LASERS WITH 2.5 MA THRESHOLD
Authors: DEPUYDT JM HAASE MA GUHA S QIU J CHENG H WU BJ HOFLER GE MEISHAUGEN G HAGEDORN MS BAUDE PF
Citation: Jm. Depuydt et al., ROOM-TEMPERATURE II-VI LASERS WITH 2.5 MA THRESHOLD, Journal of crystal growth, 138(1-4), 1994, pp. 667-676
(100) DARK LINE DEFECT IN II-VI BLUE-GREEN LIGHT EMITTERS
Authors: GUHA S CHENG H HAASE MA DEPUYDT JM QIU J WU BJ HOFLER GE
Citation: S. Guha et al., (100) DARK LINE DEFECT IN II-VI BLUE-GREEN LIGHT EMITTERS, Applied physics letters, 65(7), 1994, pp. 801-803
COMPOSITION MODULATION IN LATTICE-MATCHED ZN1-XMGXSYSE1-Y ZNSE BUFFERLAYER GAAS HETEROSTRUCTURES
Authors: KUO LH SALAMANCARIBA L WU BJ DEPUYDT JM HAUGEN GM CHENG H GUHA S HAASE MA
Citation: Lh. Kuo et al., COMPOSITION MODULATION IN LATTICE-MATCHED ZN1-XMGXSYSE1-Y ZNSE BUFFERLAYER GAAS HETEROSTRUCTURES, Applied physics letters, 65(10), 1994, pp. 1230-1232
BLUE-GREEN II-VI LASER-DIODES
Authors: WALKER CT DEPUYDT JM HAASE MA QIU J CHENG H
Citation: Ct. Walker et al., BLUE-GREEN II-VI LASER-DIODES, Physica. B, Condensed matter, 185(1-4), 1993, pp. 27-35
RECENT DEVELOPMENTS IN THE MBE GROWTH OF WIDE BANDGAP II-VI SEMICONDUCTORS FOR LASER-DIODES AND LEDS
Authors: QIU J CHENG H DEPUYDT JM HAASE MA
Citation: J. Qiu et al., RECENT DEVELOPMENTS IN THE MBE GROWTH OF WIDE BANDGAP II-VI SEMICONDUCTORS FOR LASER-DIODES AND LEDS, Journal of crystal growth, 127(1-4), 1993, pp. 279-286
IIB-8 BLUE-GREEN BURIED-RIDGE LASER-DIODES
Authors: HAASE MA BAUDE PF HAGEDORN MS QUI J DEPUYDT JM CHENG H GUHA S HOFLER GE WU BJ
Citation: Ma. Haase et al., IIB-8 BLUE-GREEN BURIED-RIDGE LASER-DIODES, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2110-2110
DEGRADATION OF II-VI BASED BLUE-GREEN LIGHT EMITTERS
Authors: GUHA S DEPUYDT JM HAASE MA QIU J CHENG H
Citation: S. Guha et al., DEGRADATION OF II-VI BASED BLUE-GREEN LIGHT EMITTERS, Applied physics letters, 63(23), 1993, pp. 3107-3109
ROLE OF STACKING-FAULTS AS MISFIT DISLOCATION SOURCES AND NONRADIATIVE RECOMBINATION CENTERS IN II-VI HETEROSTRUCTURES AND DEVICES
Authors: GUHA S DEPUYDT JM QIU J HOFLER GE HAASE MA WU BJ CHENG H
Citation: S. Guha et al., ROLE OF STACKING-FAULTS AS MISFIT DISLOCATION SOURCES AND NONRADIATIVE RECOMBINATION CENTERS IN II-VI HETEROSTRUCTURES AND DEVICES, Applied physics letters, 63(22), 1993, pp. 3023-3025
MOLECULAR-BEAM EPITAXIAL-GROWTH OF CDZNS USING ELEMENTAL SOURCES
Authors: WU BJ CHENG H GUHA S HAASE MA DEPUYDT JM MEISHAUGEN G QIU J
Citation: Bj. Wu et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF CDZNS USING ELEMENTAL SOURCES, Applied physics letters, 63(21), 1993, pp. 2935-2937
LOW-THRESHOLD BURIED-RIDGE II-VI-LASER DIODES
Authors: HAASE MA BAUDE PF HAGEDORN MS QIU J DEPUYDT JM CHENG H GUHA S HOFLER GE WU BJ
Citation: Ma. Haase et al., LOW-THRESHOLD BURIED-RIDGE II-VI-LASER DIODES, Applied physics letters, 63(17), 1993, pp. 2315-2317
EFFECTS OF ZN AND GA INTERDIFFUSION ON ZNSE N+ GAAS INTERFACES/
Authors: KASSEL L GARLAND JW RACCAH PM HAASE MA CHENG H
Citation: L. Kassel et al., EFFECTS OF ZN AND GA INTERDIFFUSION ON ZNSE N+ GAAS INTERFACES/, Semiconductor science and technology, 6(9A), 1991, pp. 146-151
Risultati: 1-23 |