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Results:
1-14
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Results: 14
Authors:
JANOSSY B
HADDAB Y
VILLIOT JM
POPOVIC RS
Citation: B. Janossy et al., HOT-CARRIER HALL DEVICES IN CMOS TECHNOLOGY, Sensors and actuators. A, Physical, 71(3), 1998, pp. 172-178
Authors:
HADDAB Y
POPOVIC RS
Citation: Y. Haddab et Rs. Popovic, PERSISTENT PHOTOCONDUCTIVITY IN SILICON-WAFERS, Semiconductor science and technology (Print), 13(11), 1998, pp. 1294-1297
Authors:
MANIC D
HADDAB Y
POPOVIC RS
Citation: D. Manic et al., ON-WAFER HEATING TESTS TO STUDY STABILITY OF SILICON DEVICES, Microelectronics and reliability, 38(6-8), 1998, pp. 1069-1073
Authors:
HADDAB Y
MANIC D
POPOVIC RS
Citation: Y. Haddab et al., PERSISTENT PHOTOCONDUCTIVITY AS A TOOL FOR MONITORING OXIDE CLUSTER CONCENTRATION IN SILICON-WAFERS, Microelectronics and reliability, 38(4), 1998, pp. 511-514
Authors:
HADDAB Y
MANIC D
POPOVIC RS
Citation: Y. Haddab et al., AN ON-WATER TEST STRUCTURE TO MEASURE THE EFFECT OF THERMALLY-INDUCEDSTRESS ON SILICON DEVICES, Microelectronics and reliability, 37(10-11), 1997, pp. 1441-1444
Authors:
MENEGHESSO G
MION A
HADDAB Y
PAVESI M
MANFREDI M
CANALI C
ZANONI E
Citation: G. Meneghesso et al., HOT-CARRIER EFFECTS IN ALGAAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS - FAILURE MECHANISMS INDUCED BY HOT-CARRIER TESTING/, Journal of applied physics, 82(11), 1997, pp. 5547-5554
Authors:
MENEGHESSO G
HADDAB Y
PERRINO N
CANALI C
ZANONI E
Citation: G. Meneghesso et al., DRAIN CURRENT DLTS ANALYSIS OF RECOVERABLE AND PERMANENT DEGRADATION EFFECTS IN ALGAAS GAAS AND ALGAAS/INGAAS HEMTS/, Microelectronics and reliability, 36(11-12), 1996, pp. 1895-1898
Authors:
HADDAB Y
BONARD JM
HAACKE S
DEVEAUD B
Citation: Y. Haddab et al., OPTIMUM CHANNEL THICKNESS OF AL0.3GA0.7AS IN0.25GA0.75AS/GAAS HETEROSTRUCTURES FOR ELECTRON-TRANSPORT APPLICATIONS/, Journal of applied physics, 80(11), 1996, pp. 6309-6314
Authors:
MENEGHESSO G
PACCAGNELLA A
HADDAB Y
CANALI C
ZANONI E
Citation: G. Meneghesso et al., EVIDENCE OF INTERFACE-TRAP CREATION BY HOT-ELECTRONS IN ALGAAS GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Applied physics letters, 69(10), 1996, pp. 1411-1413
Authors:
GONTRAND C
HADDAB Y
KAABI L
MERABET A
Citation: C. Gontrand et al., A NEW MODEL FOR CODIFFUSION IN POLYCRYSTALLINE SILICON SPECIFIED TO BICMOS TECHNOLOGY, Semiconductor science and technology, 10(10), 1995, pp. 1393-1403
Authors:
HADDAB Y
PY MA
BONARD JM
BUHLMANN HJ
ILEGEMS M
Citation: Y. Haddab et al., CAPACITANCE AND DRAIN CURRENT DEEP-LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS ON MOLECULAR-BEAM EPITAXY-GROWN GAAS IN0.25GA0.75AS/AL0.3GA0.7AS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Materials science and technology, 11(10), 1995, pp. 1079-1082
Authors:
HADDAB Y
DEVEAUD B
BUHLMANN HJ
ILEGEMS M
Citation: Y. Haddab et al., LOW-FREQUENCY NOISE MEASUREMENTS OF ALXGA1-XAS INYGA1-Y AS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Journal of applied physics, 78(4), 1995, pp. 2509-2514
Authors:
HUGI J
HADDAB Y
SACHOT R
ILEGEMS M
Citation: J. Hugi et al., CARRIER TRAPPING IN ULTRAFAST METAL-SEMICONDUCTOR-METAL PHOTODETECTORS ON INGAAS GAAS-ON-GAAS SUPERLATTICES/, Journal of applied physics, 77(4), 1995, pp. 1785-1794
Authors:
HADDAB Y
PY MA
BUHLMANN HJ
ILEGEMS M
Citation: Y. Haddab et al., INVESTIGATION OF DX CENTERS IN MODULATION-DOPED FIELD-EFFECT TRANSISTOR-TYPE AL0.3GA0.7AS GAAS HETEROSTRUCTURES USING A FOURIER-TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY SYSTEM/, Journal of electronic materials, 23(12), 1994, pp. 1343-1347
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