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Results: 1-15 |
Results: 15
STRESS CALCULATIONS FOR CARBON NANOTUBES
Authors: HALICIOGLU T
Citation: T. Halicioglu, STRESS CALCULATIONS FOR CARBON NANOTUBES, Thin solid films, 312(1-2), 1998, pp. 11-14
GROWN-IN POINT-DEFECTS AND MICROSCOPIC DEFECT FORMATION IN CZ SILICON- I - THE ONE-DIMENSIONAL, STEADY-STATE APPROXIMATION
Authors: TILLER WA FRIEDMAN M SHAW R CUENDET N HALICIOGLU T
Citation: Wa. Tiller et al., GROWN-IN POINT-DEFECTS AND MICROSCOPIC DEFECT FORMATION IN CZ SILICON- I - THE ONE-DIMENSIONAL, STEADY-STATE APPROXIMATION, Journal of crystal growth, 186(1-2), 1998, pp. 113-127
PROPERTIES OF DIAMOND AND DIAMOND-LIKE CLUSTERS IN NANOMETRIC DIMENSIONS
Authors: HALICIOGLU T
Citation: T. Halicioglu, PROPERTIES OF DIAMOND AND DIAMOND-LIKE CLUSTERS IN NANOMETRIC DIMENSIONS, Physica status solidi. b, Basic research, 199(2), 1997, pp. 345-350
MULTILAYER RELAXATION FEATURES ON (100) AND (111) SURFACE OF BETA-SIC
Authors: HALICIOGLU T
Citation: T. Halicioglu, MULTILAYER RELAXATION FEATURES ON (100) AND (111) SURFACE OF BETA-SIC, Thin solid films, 286(1-2), 1996, pp. 184-187
THE ENERGIES OF MICROVOID FORMATION IN SI AS A FUNCTION OF APPLIED HYDROSTATIC STRESS
Authors: CUENDET N HALICIOGLU T TILLER WA
Citation: N. Cuendet et al., THE ENERGIES OF MICROVOID FORMATION IN SI AS A FUNCTION OF APPLIED HYDROSTATIC STRESS, Applied physics letters, 69(26), 1996, pp. 4071-4071
THE ENERGETICS OF (113) STACKING-FAULT FORMATION IN SI FROM SUPERSATURATED INTERSTITIALS
Authors: CUENDET N HALICIOGLU T TILLER WA
Citation: N. Cuendet et al., THE ENERGETICS OF (113) STACKING-FAULT FORMATION IN SI FROM SUPERSATURATED INTERSTITIALS, Applied physics letters, 68(1), 1996, pp. 19-21
COMPARATIVE-STUDY ON ENERGY-RELATED AND STRUCTURE-RELATED PROPERTIES FOR THE (100) SURFACE OF BETA-SIC
Authors: HALICIOGLU T
Citation: T. Halicioglu, COMPARATIVE-STUDY ON ENERGY-RELATED AND STRUCTURE-RELATED PROPERTIES FOR THE (100) SURFACE OF BETA-SIC, Physical review. B, Condensed matter, 51(11), 1995, pp. 7217-7223
STRESS CALCULATIONS ON DIAMOND SURFACES
Authors: HALICIOGLU T
Citation: T. Halicioglu, STRESS CALCULATIONS ON DIAMOND SURFACES, Thin solid films, 260(2), 1995, pp. 200-204
ENERGETICS OF MICROVOID FORMATION IN SI FROM SUPERSATURATED VACANCIES
Authors: CUENDET N HALICIOGLU T TILLER WA
Citation: N. Cuendet et al., ENERGETICS OF MICROVOID FORMATION IN SI FROM SUPERSATURATED VACANCIES, Applied physics letters, 67(8), 1995, pp. 1063-1065
FREE-ENERGIES, STRUCTURES, AND DIFFUSION OF POINT-DEFECTS IN SI USINGAN EMPIRICAL POTENTIAL
Authors: UNGAR PJ HALICIOGLU T TILLER WA
Citation: Pj. Ungar et al., FREE-ENERGIES, STRUCTURES, AND DIFFUSION OF POINT-DEFECTS IN SI USINGAN EMPIRICAL POTENTIAL, Physical review. B, Condensed matter, 50(11), 1994, pp. 7344-7357
BINDING-ENERGIES FOR CARBON-ATOMS AND CLUSTERS DEPOSITED ON THE SI(100) SURFACE
Authors: HALICIOGLU T
Citation: T. Halicioglu, BINDING-ENERGIES FOR CARBON-ATOMS AND CLUSTERS DEPOSITED ON THE SI(100) SURFACE, Thin solid films, 249(1), 1994, pp. 78-82
STRAIN DEPENDENCE OF BINDING-ENERGIES FOR CARBON ADATOMS ON THE SI(100) SURFACE
Authors: HALICIOGLU T
Citation: T. Halicioglu, STRAIN DEPENDENCE OF BINDING-ENERGIES FOR CARBON ADATOMS ON THE SI(100) SURFACE, Thin solid films, 237(1-2), 1994, pp. 22-24
ELECTRONIC-ENERGY CALCULATION OF C-60 CLUSTERS
Authors: KATIRCIOGLU S ERKOC S HALICIOGLU T
Citation: S. Katircioglu et al., ELECTRONIC-ENERGY CALCULATION OF C-60 CLUSTERS, Materials chemistry and physics, 34(1), 1993, pp. 78-80
CALCULATIONS FOR DEFECTS FORMED ON DIAMOND SURFACES
Authors: HALICIOGLU T
Citation: T. Halicioglu, CALCULATIONS FOR DEFECTS FORMED ON DIAMOND SURFACES, Thin solid films, 228(1-2), 1993, pp. 293-296
CALCULATIONS FOR LEDGE ENERGIES ON THE DIAMOND (111) SURFACE
Authors: SHIOMI H HALICIOGLU T
Citation: H. Shiomi et T. Halicioglu, CALCULATIONS FOR LEDGE ENERGIES ON THE DIAMOND (111) SURFACE, Surface science, 295(1-2), 1993, pp. 154-159
Risultati: 1-15 |