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Results: 1-22 |
Results: 22
SPONTANEOUS AND LASER-ENHANCED HALOGEN ETCHING OF GAAS(110)
Authors: HAN BY WEAVER JH
Citation: By. Han et Jh. Weaver, SPONTANEOUS AND LASER-ENHANCED HALOGEN ETCHING OF GAAS(110), Journal of physics. Condensed matter, 10(35), 1998, pp. 7723-7742
LAYER-BY-LAYER ETCHING OF GAAS(110) WITH HALOGENATION AND PULSED-LASER IRRADIATION
Authors: HAN BY CHA CY WEAVER JH
Citation: By. Han et al., LAYER-BY-LAYER ETCHING OF GAAS(110) WITH HALOGENATION AND PULSED-LASER IRRADIATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 490-493
LASER INTERACTION WITH BR-GAAS(110) - ETCHING AND ATOMIC DESORPTION
Authors: HAN BY WEAVER JH
Citation: By. Han et Jh. Weaver, LASER INTERACTION WITH BR-GAAS(110) - ETCHING AND ATOMIC DESORPTION, Physical review. B, Condensed matter, 58(16), 1998, pp. 10981-10989
SURFACE MORPHOLOGIES ASSOCIATED WITH THERMAL-DESORPTION - SCANNING FUNNELING MICROSCOPY STUDIES OF BR-GAAS(110)
Authors: CHA CY BRAKE J HAN BY OWENS DW WEAVER JH
Citation: Cy. Cha et al., SURFACE MORPHOLOGIES ASSOCIATED WITH THERMAL-DESORPTION - SCANNING FUNNELING MICROSCOPY STUDIES OF BR-GAAS(110), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 605-609
COVERAGE-DEPENDENT ETCHING PATHWAYS FOR BR-GAAS(110)
Authors: BRAKE J CHA CY HAN BY OWENS DW WEAVER JH
Citation: J. Brake et al., COVERAGE-DEPENDENT ETCHING PATHWAYS FOR BR-GAAS(110), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 660-664
COVERAGE-DEPENDENT ETCHING PATHWAYS FOR BR-GAAS(110)
Authors: BRAKE J CHA CY HAN BY OWENS DW WEAVER JH
Citation: J. Brake et al., COVERAGE-DEPENDENT ETCHING PATHWAYS FOR BR-GAAS(110), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 670-674
ETCH PIT DEVELOPMENT AND GROWTH ON GAAS(110)
Authors: HAN BY CHA CY WEAVER JH
Citation: By. Han et al., ETCH PIT DEVELOPMENT AND GROWTH ON GAAS(110), Physical review. B, Condensed matter, 56(8), 1997, pp. 4966-4970
PULSED-LASER-INDUCED ETCHING OF BR-GAAS(110)
Authors: CHA CY HAN BY WEAVER JH
Citation: Cy. Cha et al., PULSED-LASER-INDUCED ETCHING OF BR-GAAS(110), Surface science, 381(2-3), 1997, pp. 636-643
UP-CONVERTED HOT LUMINESCENCE OF CR4+ IONS IN MG2GEO4
Authors: DEMOS SG HAN BY PETRICEVIC V ALFANO RR
Citation: Sg. Demos et al., UP-CONVERTED HOT LUMINESCENCE OF CR4+ IONS IN MG2GEO4, Journal of the Optical Society of America. B, Optical physics, 13(11), 1996, pp. 2396-2400
PROBING THE SURFACE MOLECULAR-STRUCTURE IN THE UPS SPECTRA OF OCTADECANETHIOL AND 1-CYCLOHEXYL-12-DODECANETHIOL SELF-ASSEMBLED ON GOLD
Authors: DUWEZ AS RIGA J HAN BY DELHALLE J
Citation: As. Duwez et al., PROBING THE SURFACE MOLECULAR-STRUCTURE IN THE UPS SPECTRA OF OCTADECANETHIOL AND 1-CYCLOHEXYL-12-DODECANETHIOL SELF-ASSEMBLED ON GOLD, Journal of electron spectroscopy and related phenomena, 81(1), 1996, pp. 55-61
INTRINSIC VALENCE AND CONDUCTION BANDS OF SI(111)-1X1
Authors: HE Y BOUZIDI S HAN BY YU LM THIRY PA CAUDANO R DEBEVER JM
Citation: Y. He et al., INTRINSIC VALENCE AND CONDUCTION BANDS OF SI(111)-1X1, Physical review. B, Condensed matter, 54(24), 1996, pp. 17654-17660
EXPERIMENTAL-EVIDENCE FOR RESONANT ELECTRON-SCATTERING IN C-70 MOS2/
Authors: HAN BY HEVESI K YU LM THIRY PA PIREAUX JJ CAUDANO R
Citation: By. Han et al., EXPERIMENTAL-EVIDENCE FOR RESONANT ELECTRON-SCATTERING IN C-70 MOS2/, Chemical physics letters, 253(3-4), 1996, pp. 257-260
ELECTRONIC-TRANSITIONS AND EXCITATIONS IN SOLID C-70 STUDIED BY REFLECTION ELECTRON-ENERGY-LOSS SPECTROSCOPY
Authors: HAN BY HEVESI K YU LM GENSTERBLUM G RUDOLF P PIREAUX JJ THIRY PA CAUDANO R
Citation: By. Han et al., ELECTRONIC-TRANSITIONS AND EXCITATIONS IN SOLID C-70 STUDIED BY REFLECTION ELECTRON-ENERGY-LOSS SPECTROSCOPY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 1606-1608
HETEROEPITAXIAL GROWTH OF C-70 FILMS ON MOS2(0001) AND THEIR CHARACTERIZATION BY LOW-ENERGY-ELECTRON DIFFRACTION AND PHOTOELECTRON-SPECTROSCOPY
Authors: HAN BY HEVESI K YU LM GENSTERBLUM G PIREAUX JJ THIRY PA CAUDANO R
Citation: By. Han et al., HETEROEPITAXIAL GROWTH OF C-70 FILMS ON MOS2(0001) AND THEIR CHARACTERIZATION BY LOW-ENERGY-ELECTRON DIFFRACTION AND PHOTOELECTRON-SPECTROSCOPY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 1036-1039
RESONANT INTERACTION OF LOW-ENERGY ELECTRONS WITH INTRAMOLECULAR VIBRATIONS IN SOLID C-60
Authors: HEVESI K FUSTIN CA RUDOLF P YU LM HAN BY GENSTERBLUM G THIRY PA PIREAUX JJ CAUDANO R
Citation: K. Hevesi et al., RESONANT INTERACTION OF LOW-ENERGY ELECTRONS WITH INTRAMOLECULAR VIBRATIONS IN SOLID C-60, Journal of electron spectroscopy and related phenomena, 76, 1995, pp. 115-119
OSCILLATOR-STRENGTHS OF INFRARED ACTIVE VIBRATIONS OF C-70 DETERMINEDBY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY
Authors: YU LM HEVESI K HAN BY PIREAUX JJ THIRY PA CAUDANO R LAMBIN P
Citation: Lm. Yu et al., OSCILLATOR-STRENGTHS OF INFRARED ACTIVE VIBRATIONS OF C-70 DETERMINEDBY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY, Surface review and letters, 2(6), 1995, pp. 705-710
RESONANCE EFFECTS OBSERVED IN THE INTERACTION OF LOW-ENERGY ELECTRONSAND INTRAMOLECULAR VIBRATIONS OF SOLID C-70
Authors: YU LM HAN BY HEVESI K RUDOLF P GENSTERBLUM G THIRY PA PIREAUX JJ CAUDANO R LAMBIN P
Citation: Lm. Yu et al., RESONANCE EFFECTS OBSERVED IN THE INTERACTION OF LOW-ENERGY ELECTRONSAND INTRAMOLECULAR VIBRATIONS OF SOLID C-70, Surface review and letters, 2(5), 1995, pp. 557-562
ELECTRONIC-TRANSITIONS AND EXCITATIONS IN SOLID C-70 STUDIED BY EELS AND XPS C-1S SATELLITE STRUCTURES
Authors: HAN BY YU LM HEVESI K GENSTERBLUM G RUDOLF P PIREAUX JJ THIRY PA CAUDANO R LAMBIN P LUCAS AA
Citation: By. Han et al., ELECTRONIC-TRANSITIONS AND EXCITATIONS IN SOLID C-70 STUDIED BY EELS AND XPS C-1S SATELLITE STRUCTURES, Physical review. B, Condensed matter, 51(11), 1995, pp. 7179-7185
PHONON MODE AND ELECTRONIC BOTTLENECK ASSOCIATED WITH THE NONRADIATIVE RELAXATION IN NI2-DOPED MGO()
Authors: DEMOS SG HAN BY ALFANO RR
Citation: Sg. Demos et al., PHONON MODE AND ELECTRONIC BOTTLENECK ASSOCIATED WITH THE NONRADIATIVE RELAXATION IN NI2-DOPED MGO(), Applied physics letters, 67(5), 1995, pp. 635-637
GROWTH MODE AND ELECTRONIC-STRUCTURE OF THE EPITAXIAL C-60(111) GES(001) INTERFACE/
Authors: GENSTERBLUM G HEVESI K HAN BY YU LM PIREAUX JJ THIRY PA CAUDANO R LUCAS AA BERNAERTS D AMELINCKX S VANTENDELOO G BENDELE G BUSLAPS T JOHNSON RL FOSS M FEIDENHANSL R LELAY G
Citation: G. Gensterblum et al., GROWTH MODE AND ELECTRONIC-STRUCTURE OF THE EPITAXIAL C-60(111) GES(001) INTERFACE/, Physical review. B, Condensed matter, 50(16), 1994, pp. 11981-11995
INITIAL GROWTH OF ALN ON CLEAN AND OXIDIZED IRON STUDIED GY AES AND EELS
Authors: MALENGREAU F VERMEERSCH M SPORKEN R PHILIPPE L HAN BY CAUDANO R
Citation: F. Malengreau et al., INITIAL GROWTH OF ALN ON CLEAN AND OXIDIZED IRON STUDIED GY AES AND EELS, Surface and interface analysis, 22(1-12), 1994, pp. 193-196
GROWTH OF ALN ON CLEAN AND OXIDIZED POLYCRYSTALLINE IRON - AN AUGER STUDY
Authors: MALENGREAU F VERMEERSCH M SPORKEN R PHILIPPE L HAN BY CAUDANO R
Citation: F. Malengreau et al., GROWTH OF ALN ON CLEAN AND OXIDIZED POLYCRYSTALLINE IRON - AN AUGER STUDY, Surface science, 310(1-3), 1994, pp. 347-358
Risultati: 1-22 |